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Перегляд Semicond. Physics Quantum Electronics & Optoelectronics, 2003, № 2 за назвою

Репозиторій DSpace/Manakin

Перегляд Semicond. Physics Quantum Electronics & Optoelectronics, 2003, № 2 за назвою

Сортувати за: Порядок: Результатів:

  • Analysis of luminescence method applicability for determination of Cd₁₋xZnxTe composition 
    Glinchuk, K.D.; Litovchenko, N.M.; Strilchuk, O.N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    Physical fundamentals are analyzed for the method of determination of Cd₁₋xZnxTe composition x from measurements of the luminescence band peak position, emission being caused by annihilation of bound exciton - shallow ...
  • Change of carrier spectrum in layer semiconductors caused by strong electromagnetic wave field 
    Lukiyanets, B.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    Spectrum of carriers in layer semiconductors under action of strong electromagnetic field is analyzed. It is shown that obtained modification of the spectrum qualitatively differs from modification in analogous problem in ...
  • Characteristics of confined exciton states in silicon quantum wires 
    Korbutyak, D.V.; Kryuchenko, Yu.V.; Kupchak, I.M.; Sachenko, A.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    We have studied theoretically the combined effect of quantum confinement and "dielectric enhancement" on the characteristics of the exciton ground state in quasi-1D silicon nanowires. Consideration has been made within ...
  • Characterization of CdTe+Mn crystals depending on doping procedure 
    Nikoniuk, E.S.; Zakharuk, Z.I.; Rarenko, I.M.; Kuchma, M.I.; Yurijchuk, I.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    Electrophysical properties of CdTe+Mn crystals grown by three different doping scheme of manganese introduction were studied. It was found that the properties of the CdTe crystals doped with Mn strongly depend on both the ...
  • Chemical bonding and optical bowing in III-nitrides solid solutions 
    Voznyy, O.V.; Deibuk, V.G. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    Chemical bonding and electronic properties of III-nitrides solid solutions are studied using a model empirical pseudopotential method in modified virtual crystal approximation taking into account positional and compositional ...
  • Detection and metrology of optical vortex helical wave fronts 
    Bogatiryova, G.V.; Soskin, M.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    Spatial structure of optical vortex helical wave fronts is for the first time directly tested using various interference arrangements and precise measuring techniques. Experimental data are compared with simulation results. ...
  • Dielectric response of disordered ferroelectrics with embedded charged clusters 
    Morozovska, A.N.; Eliseev, E.A.; Obukhovsky, V.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    The model of static charged clusters, which adequately describes the dielectric hysteresis and permittivity of disordered ferroelectrics with non-isovalent impurities, has been proposed. The main result of paper is modified ...
  • Effect of constant electric field on electronic absorption spectra of dye-doped amorphous polymer films 
    Davidenko, N.A.; Chuprin, N.G.; Zabolotny, M.A.; Derevyanko, N.A.; Ishchenko, A.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    The change of an electronic absorption coefficient of polymer films, doped by symmetric cationic polymethine dye is researched in an external constant electric field. This effect are characterised by an increase of intensity ...
  • Effect of microwave treatment on the parameters of Au-TiBx-GaAs(SiC 6H) surface-barrier structures 
    Abdizhaliev, S.K.; Ismailov, K.A.; Kamalov, A.B.; Kudrik, Ya.Ya. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    We studied I-V curves of Au-TiBx-n-n⁺-GaAs and Au-TiBx-n-SiC 6Н surface-barrier structures. The structures were exposed to microwave treatments (frequency of 2.45 GHZ, irradiance of 1.5 W/cm², duration of 0-500 s). For ...
  • Effect of the sapphire substrate on spectral emission features of LEDs based on InGaN/AlGaN/GaN heterostructures 
    Bletskan, D.I.; Lukyanchuk, O.R.; Bletskan, O.D. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    Luminescence spectra of blue and green LEDs based on InxGa₁₋xN/AlyGa₁₋yN/GaN heterostructures with many quantum wells in the current range 0.1 to 10 mA have been studied besides the main electroluminescence band. In the ...
  • Effects of interband phototunneling and filling the bands in electroreflectance spectra of germanium 
    Gentsar, P.A.; Matveeva, L.A.; Kudryavtsev, A.A.; Venger, E.F. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    Electroreflectance spectra of chemically etched (110) surface of intrinsic germanium are measured in the range of E₁, E₁ + Δ₁ transitions for ||[100] and ||[10] directions of the polarization vector. Separated are isotropic ...
  • Electric properties of metal-organic lyotropic liquid crystals 
    Klimusheva, G.V.; Koval'chuk, A.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    The electric properties of pure and dye-doped potassium caproate, which in a 1:1 water solution forms at room temperature ionic lyotropic liquid crystals (ILLC) of smectic A type [1], were investigated. It carried out the ...
  • Enhancement of CdSSe QD exciton luminescence efficiency by hydrogen RF plasma treatment 
    Kunets, V.P.; Kulish, N.R.; Strelchuk, V.V.; Nazarov, A.N.; Tkachenko, A.S.; Lysenko, V.S.; Lisitsa, M.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    We report an enhancement of exciton luminescence in CdSxSe₁₋x QD embedded into borosilicate glass matrix and then treated by the low-temperature hydrogen RF plasma. Results clearly confirm the essential crushing of the ...
  • Evolution of defective structure of the irradiated silicon during natural ageing 
    Fodchuk, I.M.; Gutsulyak, T.G.; Himchynsky, O.G.; Olijnich-Lysjuk, A.V.; Raransky, N.D. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    The defective structure of silicon single crystals grown by Chochralski method (Cz-Si) before and after an irradiation by high-energy electrons and gamma beams (E ~ 18 MeV) have been studied by the X-rey acoustic resonance ...
  • Growing Cd₁₋x₋yMnyHgxTe single crystals and their optoelectronic properties 
    Paranchych, S.Yu.; Paranchych, L.D.; Tanasyuk, Yu.V.; Romanyuk, V.R.; Makogonenko, V.M.; Yurtsenyuk, R.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    Single crystals of Cd₁₋x₋yMnyHgxTe:V (х = 0.05; у = 0.03-0.07, NV = 1∙10¹⁹ cm⁻³) have been grown and their electrical and optical properties have been studied. The transmission spectra of the samples with the composition ...
  • High efficient solar cells and modules based on diamond-like carbon film - multicrystalline Si structures 
    Klyui, N.I.; Korneta, O.B.; Kostylyov, V.P.; Litovchenko, V.G.; Makarov, A.V.; Dikusha, V.N.; Neselevska, L.V.; Gorbulik, V.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    In the work the results of investigations of developed and produced solar cells (SC) and modules (SM) characteristics are presented. It has been shown that due to application of hydrogen plasma treatment and deposition of ...
  • Investigation of some mechanisms for formation of exciton absorption bands in layered semiconductor n-InSe and p-GaSe crystals 
    Zhirko, Yu.I.; Zharkov, I.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    We show that processes of creation, radiation and decay of the ground (n = 1) and excited exciton states in layered n-InSe and p-GaSe crystals involve direct (photon -> exciton -> photon, at k = 0), as well as indirect ...
  • Investigation of the optical and acoustical phonon modes in Si₁₋xGex QD SLs 
    Dzhagan, V.N.; Krasil'nik, Z.F.; Lytvyn, P.M.; Novikov, A.V.; Valakh, M.Ya.; Yukhymchuk, V.O. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    Single- and multilayer structures with Si₁₋xGex nanoislands have been investigated using the Raman scattering technique. The values of the mechanical strain and composition were determined in the islands of the both ...
  • Ion induced field effect in silicon in nematic liquid crystal cell 
    Kucheev, S.I.; Gritsenko, M.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    An influence of ion charge on surface conductivity of silicon in In₂O₃/5CB/monocrystal silicon/Al structure, in which a specific resistance of silicon is much less than a specific resistance of liquid crystal layer, was ...
  • One-dimensional warm electron transport in GaN quantum well wires at low temperatures 
    Sarkar, S.K. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    One-dimensional warm electron coefficient (β) and Ohmic mobility μ₀ in a square quantum well wire of GaN are studied for lattice temperatures in the range of 4-10 K, which are important from the application point of view. ...

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