Enhancement of CdSSe QD exciton luminescence efficiency by hydrogen RF plasma treatment

Домашня сторінка
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Фізико-технічні та математичні науки
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Відділення фізики і астрономії
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Semiconductor Physics Quantum Electronics & Optoelectronics
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Semiconductor Physics Quantum Electronics & Optoelectronics, 2003, том 6
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Semicond. Physics Quantum Electronics & Optoelectronics, 2003, № 2
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Enhancement of CdSSe QD exciton luminescence efficiency by hydrogen RF plasma treatment

Kunets, V.P. ; Kulish, N.R. ; Strelchuk, V.V. ; Nazarov, A.N. ; Tkachenko, A.S. ; Lysenko, V.S. ; Lisitsa, M.P.

Інший ID: PACS: 78.55.Et; 78.67.Hc; 71.55.Gs

URI: http://dspace.nbuv.gov.ua/handle/123456789/118011

Посилання: Enhancement of CdSSe QD exciton luminescence efficiency by hydrogen RF plasma treatment / V.P. Kunets, N.R. Kulish, V.V. Strelchuk, A.N. Nazarov, A.S. Tkachenko, V.S. Lysenko, M.P. Lisitsa // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 2. — С. 169-171. — Бібліогр.: 13 назв. — англ.

Підтримка: This work has been partially supported by the joint project "Physics of Solid State Nanostructures" between the Ukrainian State Foundation of Fundamental Researches and the Russian Foundation for the Basic Researches.

Дата: 2003

Завантажень: 319

Enhancement of CdSSe QD exciton luminescence efficiency by hydrogen RF plasma treatment

Анотація:

We report an enhancement of exciton luminescence in CdSxSe₁₋x QD embedded into borosilicate glass matrix and then treated by the low-temperature hydrogen RF plasma. Results clearly confirm the essential crushing of the surface levels that have a high nonradiative recombination efficiency.

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