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Growing Cd₁₋x₋yMnyHgxTe single crystals and their optoelectronic properties
Репозиторій DSpace/Manakin
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- Фізико-технічні та математичні науки
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- Відділення фізики і астрономії
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- Semiconductor Physics Quantum Electronics & Optoelectronics
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- Semiconductor Physics Quantum Electronics & Optoelectronics, 2003, том 6
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- Semicond. Physics Quantum Electronics & Optoelectronics, 2003, № 2
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Growing Cd₁₋x₋yMnyHgxTe single crystals and their optoelectronic properties
Посилання:
Growing Cd₁₋x₋yMnyHgxTe single crystals and their optoelectronic properties / S.Yu. Paranchych, L.D. Paranchych, Yu.V. Tanasyuk, V.R. Romanyuk, V.M. Makogonenko, R.M. Yurtsenyuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 2. — С. 153-155. — Бібліогр.: 15 назв. — англ.
Дата:
2003
Переглядів:
711
Завантажень:
346
Анотація:
Single crystals of Cd₁₋x₋yMnyHgxTe:V (х = 0.05; у = 0.03-0.07, NV = 1∙10¹⁹ cm⁻³) have been grown and their electrical and optical properties have been studied. The transmission spectra of the samples with the composition x = 0.05; y = 0.07 were characterized by the minimum in the 3.5-5.5 μm spectral range. In order to understand the nature of it the energy diagram of vanadium levels has been considered. The band gap of the studied solid solutions with different manganese content has been found from the absorption coefficient spectra and compared with those calculated.
