Dielectric response of disordered ferroelectrics with embedded charged clusters

Домашня сторінка
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Фізико-технічні та математичні науки
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Відділення фізики і астрономії
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Semiconductor Physics Quantum Electronics & Optoelectronics
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Semiconductor Physics Quantum Electronics & Optoelectronics, 2003, том 6
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Semicond. Physics Quantum Electronics & Optoelectronics, 2003, № 2
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Dielectric response of disordered ferroelectrics with embedded charged clusters

Morozovska, A.N. ; Eliseev, E.A. ; Obukhovsky, V.V.

Інший ID: PACS: 77.80.-e

URI: http://dspace.nbuv.gov.ua/handle/123456789/118003

Посилання: Dielectric response of disordered ferroelectrics with embedded charged clusters / A.N. Morozovska, E.A. Eliseev, V.V. Obukhovsky // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 2. — С. 238-248. — Бібліогр.: 21 назв. — англ.

Підтримка: The authors are greatly indebted to Prof. N.V. Morozovsky for frutfull discussions of the model and useful remarks to the manuscript. The work is supported by grant INTAS-01-0173.

Дата: 2003

Завантажень: 352

Dielectric response of disordered ferroelectrics with embedded charged clusters

Анотація:

The model of static charged clusters, which adequately describes the dielectric hysteresis and permittivity of disordered ferroelectrics with non-isovalent impurities, has been proposed. The main result of paper is modified Landau-Ginzburg-Devonshire equation can be applied to the bulk ferroelectric materials with improper conductivity and movable charge fluctuations near the impurity centers.

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