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Перегляд Semicond. Physics Quantum Electronics & Optoelectronics, 2003, № 2 за датою випуску

Репозиторій DSpace/Manakin

Перегляд Semicond. Physics Quantum Electronics & Optoelectronics, 2003, № 2 за датою випуску

Сортувати за: Порядок: Результатів:

  • Characterization of CdTe+Mn crystals depending on doping procedure 
    Nikoniuk, E.S.; Zakharuk, Z.I.; Rarenko, I.M.; Kuchma, M.I.; Yurijchuk, I.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    Electrophysical properties of CdTe+Mn crystals grown by three different doping scheme of manganese introduction were studied. It was found that the properties of the CdTe crystals doped with Mn strongly depend on both the ...
  • Thermodonor activation energy and mechanisms of tensoeffects in transmutation-doped y-irradiated silicon 
    Dotsenko, Yu.P.; Ermakov, V.M.; Gorin, A.E.; Khivrych, V.I.; Kolomoets, V.V.; Machulin, V.F.; Panasjuk, L.I.; Prokopenko, I.V.; Sus', B.B.; Venger, E.F. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    Activation energy of high temperature technological thermodonors (TD) has been determined in transmutation-doped n-Si(P) using the data analysis of the Hall-effect temperature dependence. Physical mechanisms of tensoeffects ...
  • Chemical bonding and optical bowing in III-nitrides solid solutions 
    Voznyy, O.V.; Deibuk, V.G. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    Chemical bonding and electronic properties of III-nitrides solid solutions are studied using a model empirical pseudopotential method in modified virtual crystal approximation taking into account positional and compositional ...
  • Analysis of luminescence method applicability for determination of Cd₁₋xZnxTe composition 
    Glinchuk, K.D.; Litovchenko, N.M.; Strilchuk, O.N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    Physical fundamentals are analyzed for the method of determination of Cd₁₋xZnxTe composition x from measurements of the luminescence band peak position, emission being caused by annihilation of bound exciton - shallow ...
  • Investigation of some mechanisms for formation of exciton absorption bands in layered semiconductor n-InSe and p-GaSe crystals 
    Zhirko, Yu.I.; Zharkov, I.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    We show that processes of creation, radiation and decay of the ground (n = 1) and excited exciton states in layered n-InSe and p-GaSe crystals involve direct (photon -> exciton -> photon, at k = 0), as well as indirect ...
  • Ion induced field effect in silicon in nematic liquid crystal cell 
    Kucheev, S.I.; Gritsenko, M.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    An influence of ion charge on surface conductivity of silicon in In₂O₃/5CB/monocrystal silicon/Al structure, in which a specific resistance of silicon is much less than a specific resistance of liquid crystal layer, was ...
  • Effects of interband phototunneling and filling the bands in electroreflectance spectra of germanium 
    Gentsar, P.A.; Matveeva, L.A.; Kudryavtsev, A.A.; Venger, E.F. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    Electroreflectance spectra of chemically etched (110) surface of intrinsic germanium are measured in the range of E₁, E₁ + Δ₁ transitions for ||[100] and ||[10] directions of the polarization vector. Separated are isotropic ...
  • Evolution of defective structure of the irradiated silicon during natural ageing 
    Fodchuk, I.M.; Gutsulyak, T.G.; Himchynsky, O.G.; Olijnich-Lysjuk, A.V.; Raransky, N.D. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    The defective structure of silicon single crystals grown by Chochralski method (Cz-Si) before and after an irradiation by high-energy electrons and gamma beams (E ~ 18 MeV) have been studied by the X-rey acoustic resonance ...
  • Effect of constant electric field on electronic absorption spectra of dye-doped amorphous polymer films 
    Davidenko, N.A.; Chuprin, N.G.; Zabolotny, M.A.; Derevyanko, N.A.; Ishchenko, A.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    The change of an electronic absorption coefficient of polymer films, doped by symmetric cationic polymethine dye is researched in an external constant electric field. This effect are characterised by an increase of intensity ...
  • Ultrasound influence on exciton emission of GaP light diodes 
    Gontaruk, O.M.; Khivrych, V.I.; Pinkovska, M.B.; Tartachnyk, V.P.; Olikh, Ya.M.; Vernydub, R.M.; Opilat, V.Ya. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    Electroluminescence of GaP light diodes, treated by ultrasound at room and low temperatures has been studied. It has been found that short ultrasound caused improvement of red diode emission characteristics while ...
  • Studies of CdHgTe as a material for x- and γ-ray detectors 
    Kosyachenko, L.A.; Kulchynsky, V.V.; Maslyanchuk, O.L.; Paranchych, S.Yu.; Sklyarchuk, V.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    Optical, electric and photoelectric properties of Cd₁₋xHgxTe alloy with a low Hg content (x = 0.05) have been studied. The depth of impurity levels determining the conductivity of the material, their concentration and ...
  • Peculiarities of injection phenomena in heavily doped silicon structures and development of radiation-resistant diode temperature sensors 
    Shwarts, Yu.M.; Sokolov, V.N.; Shwarts, M.M.; Venger, E.F. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    To explain the experimental behaviour of differential characteristics (ideality factor, differential resistance) before and after radiation influence, a theoretical model of injection current flow mechanisms for the silicon ...
  • Dielectric response of disordered ferroelectrics with embedded charged clusters 
    Morozovska, A.N.; Eliseev, E.A.; Obukhovsky, V.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    The model of static charged clusters, which adequately describes the dielectric hysteresis and permittivity of disordered ferroelectrics with non-isovalent impurities, has been proposed. The main result of paper is modified ...
  • Synthesis, recording and metrology of laser beams with phase singularities 
    Ivanovskyy, A.A.; Basistiy, I.V.; Soskin, M.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    The main task of the work was obtaining the high efficient diffraction elements to generate high quality laser beams with phase singularities. The method of recording such diffractive structures on the organic photoresist ...
  • Growing Cd₁₋x₋yMnyHgxTe single crystals and their optoelectronic properties 
    Paranchych, S.Yu.; Paranchych, L.D.; Tanasyuk, Yu.V.; Romanyuk, V.R.; Makogonenko, V.M.; Yurtsenyuk, R.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    Single crystals of Cd₁₋x₋yMnyHgxTe:V (х = 0.05; у = 0.03-0.07, NV = 1∙10¹⁹ cm⁻³) have been grown and their electrical and optical properties have been studied. The transmission spectra of the samples with the composition ...
  • Detection and metrology of optical vortex helical wave fronts 
    Bogatiryova, G.V.; Soskin, M.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    Spatial structure of optical vortex helical wave fronts is for the first time directly tested using various interference arrangements and precise measuring techniques. Experimental data are compared with simulation results. ...
  • Change of carrier spectrum in layer semiconductors caused by strong electromagnetic wave field 
    Lukiyanets, B.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    Spectrum of carriers in layer semiconductors under action of strong electromagnetic field is analyzed. It is shown that obtained modification of the spectrum qualitatively differs from modification in analogous problem in ...
  • Electric properties of metal-organic lyotropic liquid crystals 
    Klimusheva, G.V.; Koval'chuk, A.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    The electric properties of pure and dye-doped potassium caproate, which in a 1:1 water solution forms at room temperature ionic lyotropic liquid crystals (ILLC) of smectic A type [1], were investigated. It carried out the ...
  • One-dimensional warm electron transport in GaN quantum well wires at low temperatures 
    Sarkar, S.K. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    One-dimensional warm electron coefficient (β) and Ohmic mobility μ₀ in a square quantum well wire of GaN are studied for lattice temperatures in the range of 4-10 K, which are important from the application point of view. ...
  • Investigation of the optical and acoustical phonon modes in Si₁₋xGex QD SLs 
    Dzhagan, V.N.; Krasil'nik, Z.F.; Lytvyn, P.M.; Novikov, A.V.; Valakh, M.Ya.; Yukhymchuk, V.O. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    Single- and multilayer structures with Si₁₋xGex nanoislands have been investigated using the Raman scattering technique. The values of the mechanical strain and composition were determined in the islands of the both ...

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