ЗМІСТ

Voznyy M.V., Gorley P.M., Schenderovskyy V.A.
Diffusion model of defect formation in silicon under light ion implantation

Prokopenko I.V., Kislovskii E.N., Olikhovskii S.I., Tkach V.M., Lytvyn P.M., Vladimirova T.P.
Comprehensive investigation of defects in highly perfect silicon single crystals

Borkovskaya L.V., Dzhumaev B.R., Khomenkova L.Yu., Korsunskaya N.E., Markevich I.V., Sheinkman M.K.
About the nature of diffusion anisotropy in CdS crystals

Freik D.M., Galushchak M.O., Ivanishin I.M., Shperun V.M., Zapukhlyak R.I., Pyts M.V.
Thermoelectric properties of solid solutions based on tin telluride

Venger Ye.F., Kolomoets V.V., Machulin V.F.
Interface model of low temperature plasticity in high uniaxially strained monocrystalline semiconductors

Lashkarev G.V., Radchenko M.V., Slynko E.I., Vodopiyanov V.N., Asotsky V.V., Kaminsky V.M., Beketov G.V., Rengevich E.V.
Hot wall growth and properties of lead telluride films doped by germanium and gallium

Tetyorkin V., Movchan S.
Paraelectric properties of PbTe doped with Ga

Olikh Y.M., Savkina R.K., Vlasenko O.I.
Acoustodynamic transformation of the defect structure in Hg_1-xCd_xTe alloys

Lepikh Ya.I.
Physical mechanism of temperature oscillations in ferroelectric ceramics conduction

Bonchik A.Yu., Dacko B.J., Demchuk V.I., Kiyak S.G., Palyvoda I.P., Shnyr A.F.
Melt instabilities on semiconductor surfaces induced by laser radiation

Grigorchuk N.I.
Polarization operator of phonons in quadratic approximation

Gorban A.P., Sachenko A.V., Kostylyov V.P., Prima N.A.
Effect of excitons on photoconversion efficiency in the p⁺-n-n⁺- and n⁺-p-p⁺-structures based on single-crystalline silicon

Lysenko V.S., Tyagulski I.P., Gomeniuk Y.V., Osiyuk I.N.
Effect of the charge state of traps on the transport current in the SiC/Si heterostructure

Agueev O.A., Svetlichnyi A.M.
Thermoelastic stresses and defect production in semiconductor-insulator structures at isothermic heating

Kladko V.P., Datsenko L.I., Maksimenko Z.V., Lytvyn O.S., Prokopenko I.V., Zytkiewicz Z.
Structural and composition irregularities in GaAs:Si/GaAs films grown by liquid-phase epitaxy

Ilchuk G.A.
Photopleochroism of surface-barrier structures based on semiinsulating cadmium telluride

Boltovets N.S., Goncharuk N.M., Krivutsa V.A., Chaika V.E., Konakova R.V., Milenin V.V., Soloviev E.A., Tagaev M.B., Voitsikhovskyi D.I.
Contacts for silicon IMPATT and pick-off diodes

Boltovets N.S., Basanets V.V., Ivanov V.N., Krivutsa V.A., Tsvir A.V., Belyaev A.E., Konakova R.V., Lyapin V.G., Milenin V.V., Soloviev E.A., Venger E.F., Voitsikhovskyi D.I., Kholevchuk V.V., Mitin V.F.
Microwave diodes with contact metallization systems based on silicides, nitrides and borides of refractory metals

Fekeshgazi I.V., Pervak V.Yu., Pervak Yu.A.
Properties and application of the unequal thickness two-component interference systems

Agueev O.A., Svetlichny A.M., Soloviev S.I.
Simulation of incoherent radiation absorption in 3C-, 6H- and 4H-SiC at rapid thermal processing

Kovalenko S.A.
Optical properties of thin metal films

Goncharenko A.V., Snopok B.A., Shirshov Yu.M., Venger E.F., Zavadskii S.N.
Dispersion of natural modes in a many-layer planar system

Stronski A., Vlcek M., Sklenar A.
Photoinduced structural changes in As_100-xS_x layers

Shwarts Yu.M., Kondrachuk A.V., Shwarts M.M., Shpinar L.I.
Non-ohmic Mott conductivity and thermometric characteristics of heavily doped silicon structures

Anokhov, S.
Simple waveguide model of arbitrary filled plane-plane cavity

Grinyov B.V., Dubovik M.F., Tolmachev A.V.
Borate single crystals for polyfunctional applications: production and properties

Dubovik M.F., Tolmachev A.V., Grinyov B.V., Grin L.A., Dolzhenkova E.F., Dobrotvorskaya M.V.
Luminescence and radiation-induced defects in Li₂B₄O₇:Eu single crystals

Bazhenov M.Yu., Golod P.I., Grabovskyy V.V., Kurdyukov V.V., Tolmachev A.I., Ilchenko A.Ya., Sokolov N.I., Zahaykevich G.
PEPC sensitization with polymethine dyes: 1. Squarylium dyes of indole row as efficient sensitizers for red region of optical spectrum