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Перегляд Semicond. Physics Quantum Electronics & Optoelectronics, 2000, № 3 за назвою

Репозиторій DSpace/Manakin

Перегляд Semicond. Physics Quantum Electronics & Optoelectronics, 2000, № 3 за назвою

Сортувати за: Порядок: Результатів:

  • About the nature of diffusion anisotropy in CdS crystals 
    Borkovskaya, L.V.; Dzhumaev, B.R.; Khomenkova, L.Yu.; Korsunskaya, N.E.; Markevich, I.V.; Sheinkman, M.K. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    Electrodiffusion of copper into nominally undoped high-resistivity CdS crystals at 250-400°C has been investigated. A strong diffusion anisotropy has been observed, copper diffusion in perpendicular to the c-axis direction ...
  • Acoustodynamic transformation of the defect structure in Hg₁₋xCdx Te alloys 
    Olikh, Y.M.; Savkina, R.K.; Vlasenko, O.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    The results of the investigations of transport properties of n- and p-Hg₁₋xCdxTe semiconductor crystals exposed to intensive ultrasound (≈ 6MHz) are represented. Acousto-stimulated phenomena of concentration change (increase ...
  • Borate single crystals for polyfunctional applications: production and properties 
    Grinyov, B.V.; Dubovik, M.F.; Tolmachev, A.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    Literature data and results of authors' studies are rewieved concerning structure, growing conditions, non-linear optical, piezoelectric and spectral characteristics of borate single crystals Li₂B₄O₇, LiB₃O₅, b-BaB₂O₄, ...
  • Comprehensive investigation of defects in highly perfect silicon single crystals 
    Prokopenko, I.V.; Kislovskii, E.N.; Olikhovskii, S.I.; Tkach, V.M.; Lytvyn, P.M.; Vladimirova, T.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    We used X-ray diffraction method of total rocking curves and nondestructive direct observation techniques (atomic force and scanning electron microscopies) to quantitatively determine the defect characteristics (radii and ...
  • Contacts for silicon IMPATT and pick-off diodes 
    Boltovets, N.S.; Goncharuk, N.M.; Krivutsa, V.A.; Chaika, V.E.; Konakova, R.V.; Milenin, V.V.; Soloviev, E.A.; Tagaev, M.B.; Voitsikhovskyi, D.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    We studied experimentally: (i) the ways to fabricate metal-n⁺-Si ohmic contacts with Schottky barriers; (ii) how elemental, structural and phase composition of barrier layers in the contact system, as well as of the barrier ...
  • Diffusion model of defect formation in silicon under light ion implantation 
    Voznyy, M.V.; Gorley, P.M.; Schenderovskyy, V.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    In the given paper the model of defect formation in silicon under light ion implantation is proposed which describes the whole complex of available experimental results qualitatively, and in a number of cases rather well ...
  • Dispersion of natural modes in a many-layer planar system 
    Goncharenko, A.V.; Snopok, B.A.; Shirshov, Yu.M.; Venger, E.F.; Zavadskii, S.N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    We derive the recurrence dispersion equations for natural modes of a many-layer planar system. As an illustration a five-layer planar system is considered, and solutions for guided-wave polaritons of such a system are ...
  • Effect of excitons on photoconversion efficiency in the p⁺-n-n⁺- and n⁺-p-p⁺-structures based on single-crystalline silicon 
    Gorban, A.P.; Sachenko, A.V.; Kostylyov, V.P.; Prima, N.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    We have performed theoretical simulation of the photoconversion efficiency in silicon solar cells for AM0 conditions with regard to excitonic effects. Along with known effects, we have taken into account both radiative and ...
  • Effect of the charge state of traps on the transport current in the SiC/Si heterostructure 
    Lysenko, V.S.; Tyagulski, I.P.; Gomeniuk, Y.V.; Osiyuk, I.N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    Forward and reverse currents in the heterostructure “amorphous SiC/p-Si” were studied in the temperature range 30 – 80 K. It has been found that in different ranges of the applied voltage the transport current is described ...
  • Hot wall growth and properties of lead telluride films doped by germanium and gallium 
    Lashkarev, G.V.; Radchenko, M.V.; Slynko, E.I.; Vodopiyanov, V.N.; Asotsky, V.V.; Kaminsky, V.M.; Beketov, G.V.; Rengevich, E.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    The researches results of films (PbTe)₁₋y(GaTe)y and (Pb₁₋xGexTe)₁₋y(GaTe)y of n-type conductivity with carrier concentration within (2⋅10¹⁷÷9⋅10¹⁸) cm⁻³ are represented. The films were growth by modified hot wall technology ...
  • Interface model of low temperature plasticity in high uniaxially strained monocrystalline semiconductors 
    Venger, Ye.F.; Kolomoets, V.V.; Machulin, V.F. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    The manifestation of the low temperature plasticity (LTP) in highly uniaxially strained Ge and Si single crystals was deduced from analysis of the both tensoeffect measurements data and defect-selective etching patterns ...
  • Luminescence and radiation-induced defects in Li₂B₄O₇:Eu single crystals 
    Dubovik, M.F.; Tolmachev, A.V.; Grinyov, B.V.; Grin, L.A.; Dolzhenkova, E.F.; Dobrotvorskaya, M.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    Thermostimulated luminescence (TSL) of Li₂B₄O₇ and Li₂B₄O₇:Eu single crystals in the temperature range 290-650K has been studied. Lithium tetraborate (LTB) doped with europium has been found to favour a further increase ...
  • Melt instabilities on semiconductor surfaces induced by laser radiation 
    Bonchik, A.Yu.; Dacko, B.J.; Demchuk, V.I.; Kiyak, S.G.; Palyvoda, I.P.; Shnyr, A.F. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    Laser modifications of semiconductors are often realized by pulsed rapid melting and subsequent resolidification. Recently melt instabilities have been discovered in locally melted semiconductor surfaces. We determined ...
  • Microwave diodes with contact metallization systems based on silicides, nitrides and borides of refractory metals 
    Boltovets, N.S.; Basanets, V.V.; Ivanov, V.N.; Krivutsa, V.A.; Tsvir, A.V.; Belyaev, A.E.; Konakova, R.V.; Lyapin, V.G.; Milenin, V.V.; Soloviev, E.A.; Venger, E.F.; Voitsikhovskyi, D.I.; Kholevchuk, V.V.; Mitin, V.F. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    We investigated the parameters of silicon and gallium arsenide microwave diodes intended for different functions. Their heat-resistant contacts were made on the base of interstitial phases. A unified technological route ...
  • Non-ohmic Mott conductivity and thermometric characteristics of heavily doped silicon structures 
    Shwarts, Yu.M.; Kondrachuk, A.V.; Shwarts, M.M.; Shpinar, L.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    We investigated I-V curves and thermometric characteristics of heavily doped p-silicon structures at liquid helium temperatures. The variable-range hopping conductivity is shown to occur in the structures studied. The ...
  • Optical properties of thin gold film 
    Kovalenko, S.A.; Fedorovych, R.D. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    Results of studing optical constants of thin gold films are given. The values of refraction and extinction coefficients (n, æ, respectively) are calculated from reflection and transmission spectra accordingly to traditional ...
  • Paraelectric properties of PbTe doped with Ga 
    Tetyorkin, V.; Movchan, S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    The static dielectric constant was investigated as a function of temperature and carrier concentration in In(Cu)/p-PbTe Schottky contacts. Single crystals of PbTe doped with Ga were used as substrates for preparation of ...
  • PEPC sensitization with polymethine dyes: 1. Squarylium dyes of indole row as efficient sensitizers for red region of optical spectrum 
    Bazhenov, M.Yu.; Golod, P.I.; Grabovskyy, V.V.; Kurdyukov, V.V.; Tolmachev, A.I.; Ilchenko, A.Ya.; Sokolov, N.I.; Zahaykevich, G. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    Phase hologram recording is based on photoconductivity which appears in polymer molecular semiconductor film being exposed to light [1]. Photocurrent threshold depends on energy gap between valence and conduction bands of ...
  • Photoinduced structural changes in As₁₀₀₋xSx layers 
    Stronski, A.; Vlcek, M.; Sklenar, A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    The present paper is concerned with investigations of photoinduced structural changes in As100-xSx layers. Optical constants of variously treated (virgin, exposed, annealed) samples were determined from optical transmission ...
  • Photopleochroism of surface-barrier structures based on semiinsulating cadmium telluride 
    Ilchuk, G.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    The method of mass-transfer reaction with compounds NH₄ (Cl, Br, J) as a transроrting agent is developed, and single crystals of semiinsulating CdTe are grown. Interaction of plane-polarized radiation with In-p-CdTe barrier ...

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