Microwave diodes with contact metallization systems based on silicides, nitrides and borides of refractory metals

Домашня сторінка
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Фізико-технічні та математичні науки
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Відділення фізики і астрономії
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Semiconductor Physics Quantum Electronics & Optoelectronics
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Semiconductor Physics Quantum Electronics & Optoelectronics, 2000, том 3
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Semicond. Physics Quantum Electronics & Optoelectronics, 2000, № 3
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Microwave diodes with contact metallization systems based on silicides, nitrides and borides of refractory metals

Boltovets, N.S. ; Basanets, V.V. ; Ivanov, V.N. ; Krivutsa, V.A. ; Tsvir, A.V. ; Belyaev, A.E. ; Konakova, R.V. ; Lyapin, V.G. ; Milenin, V.V. ; Soloviev, E.A. ; Venger, E.F. ; Voitsikhovskyi, D.I. ; Kholevchuk, V.V. ; Mitin, V.F.

Інший ID: PACS: 07.07.D, 81.05.J, 85.30.K

URI: http://dspace.nbuv.gov.ua/handle/123456789/121166

Посилання: Microwave diodes with contact metallization systems based on silicides, nitrides and borides of refractory metals / N.S. Boltovets, V.V. Basanets, V.N. Ivanov, V.A. Krivutsa, A.V.Tsvir, A.E. Belyaev, R.V. Konakova, V.G. Lyapin, V.V. Milenin, E.A. Soloviev, E.F. Venger, D.I. Voitsikhovskyi, V.V. Kholevchuk, V.F. Mitin // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 3. — С. 359-370. — Бібліогр.: 8 назв. — англ.

Підтримка: The development of varactor diodes and resonant tunneling diodes, as well as fast-operating switching diodes for the 33-78 GHz frequency range and IMPATT diodes for the 33-37 and 70-77 GHz frequency ranges, was carried out under the INCO-COPERNICUS Program (Project No 977131 "MEMSWAVE").

Дата: 2000

Завантажень: 486

Microwave diodes with contact metallization systems based on silicides, nitrides and borides of refractory metals

Анотація:

We investigated the parameters of silicon and gallium arsenide microwave diodes intended for different functions. Their heat-resistant contacts were made on the base of interstitial phases. A unified technological route is proposed to produce microdiodes with bulk contacts. Tests of these silicon and gallium arsenide microwave diodes in forced modes demonstrated their high heat stability.

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