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Photopleochroism of surface-barrier structures based on semiinsulating cadmium telluride
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- Відділення фізики і астрономії
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- Semiconductor Physics Quantum Electronics & Optoelectronics
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- Semiconductor Physics Quantum Electronics & Optoelectronics, 2000, том 3
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- Semicond. Physics Quantum Electronics & Optoelectronics, 2000, № 3
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Photopleochroism of surface-barrier structures based on semiinsulating cadmium telluride
Інший ID:
PACS 81.05.Z, 78.20, 73.30
Посилання:
Photopleochroism of surface-barrier structures based on semiinsulating cadmium telluride / G.A. Ilchuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 3. — С. 349-351. — Бібліогр.: 7 назв. — англ.
Підтримка:
Author express his gratitude to Professor V.I. Ivanov-Omsky for discussing the result of the studies and critical remarks.
Дата:
2000
Переглядів:
641
Завантажень:
326
Анотація:
The method of mass-transfer reaction with compounds NH₄ (Cl, Br, J) as a transроrting agent is developed, and single crystals of semiinsulating CdTe are grown. Interaction of plane-polarized radiation with In-p-CdTe barrier fabricated on these single crystals is investigated. It is shown that at incidence of plane-polarized radiation at incidence angle Q > 0° upon a surface of barrier the induced photopleochroism appears and it is proportional to the angle squared. The conclusions about the high quality both of the single crystals obtained by chemical transport reactions and of the interface of the structures as well as about the possibilities for using such structures as polarimetric analyzers of radiation are made.
