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Перегляд Semicond. Physics Quantum Electronics & Optoelectronics, 2000, № 3 за датою випуску

Репозиторій DSpace/Manakin

Перегляд Semicond. Physics Quantum Electronics & Optoelectronics, 2000, № 3 за датою випуску

Сортувати за: Порядок: Результатів:

  • Interface model of low temperature plasticity in high uniaxially strained monocrystalline semiconductors 
    Venger, Ye.F.; Kolomoets, V.V.; Machulin, V.F. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    The manifestation of the low temperature plasticity (LTP) in highly uniaxially strained Ge and Si single crystals was deduced from analysis of the both tensoeffect measurements data and defect-selective etching patterns ...
  • PEPC sensitization with polymethine dyes: 1. Squarylium dyes of indole row as efficient sensitizers for red region of optical spectrum 
    Bazhenov, M.Yu.; Golod, P.I.; Grabovskyy, V.V.; Kurdyukov, V.V.; Tolmachev, A.I.; Ilchenko, A.Ya.; Sokolov, N.I.; Zahaykevich, G. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    Phase hologram recording is based on photoconductivity which appears in polymer molecular semiconductor film being exposed to light [1]. Photocurrent threshold depends on energy gap between valence and conduction bands of ...
  • Diffusion model of defect formation in silicon under light ion implantation 
    Voznyy, M.V.; Gorley, P.M.; Schenderovskyy, V.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    In the given paper the model of defect formation in silicon under light ion implantation is proposed which describes the whole complex of available experimental results qualitatively, and in a number of cases rather well ...
  • Acoustodynamic transformation of the defect structure in Hg₁₋xCdx Te alloys 
    Olikh, Y.M.; Savkina, R.K.; Vlasenko, O.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    The results of the investigations of transport properties of n- and p-Hg₁₋xCdxTe semiconductor crystals exposed to intensive ultrasound (≈ 6MHz) are represented. Acousto-stimulated phenomena of concentration change (increase ...
  • Dispersion of natural modes in a many-layer planar system 
    Goncharenko, A.V.; Snopok, B.A.; Shirshov, Yu.M.; Venger, E.F.; Zavadskii, S.N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    We derive the recurrence dispersion equations for natural modes of a many-layer planar system. As an illustration a five-layer planar system is considered, and solutions for guided-wave polaritons of such a system are ...
  • Effect of excitons on photoconversion efficiency in the p⁺-n-n⁺- and n⁺-p-p⁺-structures based on single-crystalline silicon 
    Gorban, A.P.; Sachenko, A.V.; Kostylyov, V.P.; Prima, N.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    We have performed theoretical simulation of the photoconversion efficiency in silicon solar cells for AM0 conditions with regard to excitonic effects. Along with known effects, we have taken into account both radiative and ...
  • Physical mechanism of temperature oscillations in ferroelectric ceramics conduction 
    Lepikh, Ya.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    For ferroelectric ceramics of the lead zirconate-titanate PZT-5 system the results of investigations of conduction temperature oscillations are presented. An explanation for the effect of conduction temperature oscillations ...
  • Photoinduced structural changes in As₁₀₀₋xSx layers 
    Stronski, A.; Vlcek, M.; Sklenar, A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    The present paper is concerned with investigations of photoinduced structural changes in As100-xSx layers. Optical constants of variously treated (virgin, exposed, annealed) samples were determined from optical transmission ...
  • Luminescence and radiation-induced defects in Li₂B₄O₇:Eu single crystals 
    Dubovik, M.F.; Tolmachev, A.V.; Grinyov, B.V.; Grin, L.A.; Dolzhenkova, E.F.; Dobrotvorskaya, M.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    Thermostimulated luminescence (TSL) of Li₂B₄O₇ and Li₂B₄O₇:Eu single crystals in the temperature range 290-650K has been studied. Lithium tetraborate (LTB) doped with europium has been found to favour a further increase ...
  • Melt instabilities on semiconductor surfaces induced by laser radiation 
    Bonchik, A.Yu.; Dacko, B.J.; Demchuk, V.I.; Kiyak, S.G.; Palyvoda, I.P.; Shnyr, A.F. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    Laser modifications of semiconductors are often realized by pulsed rapid melting and subsequent resolidification. Recently melt instabilities have been discovered in locally melted semiconductor surfaces. We determined ...
  • Polarization operator of phonons in quadratic approximation 
    Grigorchuk, N.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    Using the method of the retarded Green function the polarization operator of phonons has been calculated with the simultaneous account for the linear and quadratic terms in the Hamilton operator of exciton-phonon interaction. ...
  • Borate single crystals for polyfunctional applications: production and properties 
    Grinyov, B.V.; Dubovik, M.F.; Tolmachev, A.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    Literature data and results of authors' studies are rewieved concerning structure, growing conditions, non-linear optical, piezoelectric and spectral characteristics of borate single crystals Li₂B₄O₇, LiB₃O₅, b-BaB₂O₄, ...
  • Contacts for silicon IMPATT and pick-off diodes 
    Boltovets, N.S.; Goncharuk, N.M.; Krivutsa, V.A.; Chaika, V.E.; Konakova, R.V.; Milenin, V.V.; Soloviev, E.A.; Tagaev, M.B.; Voitsikhovskyi, D.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    We studied experimentally: (i) the ways to fabricate metal-n⁺-Si ohmic contacts with Schottky barriers; (ii) how elemental, structural and phase composition of barrier layers in the contact system, as well as of the barrier ...
  • Non-ohmic Mott conductivity and thermometric characteristics of heavily doped silicon structures 
    Shwarts, Yu.M.; Kondrachuk, A.V.; Shwarts, M.M.; Shpinar, L.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    We investigated I-V curves and thermometric characteristics of heavily doped p-silicon structures at liquid helium temperatures. The variable-range hopping conductivity is shown to occur in the structures studied. The ...
  • Effect of the charge state of traps on the transport current in the SiC/Si heterostructure 
    Lysenko, V.S.; Tyagulski, I.P.; Gomeniuk, Y.V.; Osiyuk, I.N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    Forward and reverse currents in the heterostructure “amorphous SiC/p-Si” were studied in the temperature range 30 – 80 K. It has been found that in different ranges of the applied voltage the transport current is described ...
  • Microwave diodes with contact metallization systems based on silicides, nitrides and borides of refractory metals 
    Boltovets, N.S.; Basanets, V.V.; Ivanov, V.N.; Krivutsa, V.A.; Tsvir, A.V.; Belyaev, A.E.; Konakova, R.V.; Lyapin, V.G.; Milenin, V.V.; Soloviev, E.A.; Venger, E.F.; Voitsikhovskyi, D.I.; Kholevchuk, V.V.; Mitin, V.F. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    We investigated the parameters of silicon and gallium arsenide microwave diodes intended for different functions. Their heat-resistant contacts were made on the base of interstitial phases. A unified technological route ...
  • Thermoelastic stresses and defect production in semiconductor-insulator structures at isothermic heating 
    Agueev, O.A.; Svetlichnyi, A.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    For semiconductor structure substrates with film coating disturbances we investigated thermoelastic stresses and their effect on defect production at isothermic heating. A developed mathematical model enables one to optimize ...
  • Structural and composition irregularities in GaAs:Si/GaAs films grown by liquid-phase epitaxy 
    Kladko, V.P.; Datsenko, L.I.; Maksimenko, Z.V.; Lytvyn, O.S.; Prokopenko, I.V.; Zytkiewicz, Z. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    Stoichiometry parameters as well as the microdefects ones for GaAs:Si/GaAs thin films grown by liquid-phase epitaxy were investigated by means of method of X-ray integrated reflectivity energy dependencies analysis for ...
  • Properties and application of the unequal thickness two-component interference systems 
    Fekeshgazi, I.V.; Pervak, V.Yu.; Pervak, Yu.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    The methods of synthesis and designing of the two-component unequal thickness multilayer interference systems as well as interconnection of their indices of layers are presented. A solution of the problem of suppressing ...
  • Simulation of incoherent radiation absorption in 3C-, 6H- and 4H-SiC at rapid thermal processing 
    Agueev, O.A.; Svetlichny, A.M.; Soloviev, S.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    For 3C-, 6H- and 4H-SiC polytypes of different conduction types and with various impurity concentrations we investigated absorption of incoherent radiation from the near IR spectral region at rapid thermal annealing. General ...

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