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Перегляд Semicond. Physics Quantum Electronics & Optoelectronics, 2010, № 4 за датою випуску

Репозиторій DSpace/Manakin

Перегляд Semicond. Physics Quantum Electronics & Optoelectronics, 2010, № 4 за датою випуску

Сортувати за: Порядок: Результатів:

  • The study of solar cells with back side contacts at low illumination 
    Gorban, A.P.; Kostylyov, V.P.; Litovchenko, V.G.; Sachenko, A.V.; Serba, A.A.; Sokolovskyi, I.O.; Chernenko, V.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    Theoretical analysis and experimental research of Si solar cells (SC) with interdigitated back side contacts (BSC) photovoltaic parameters and photoconversion efficiency at low light level have been done in presence of ...
  • CdTe quantum dots precipitation of monodisperse fractions from colloid solutions 
    Savchuk, O.A.; Trishchuk, L.I.; Mazarchuk, I.A.; Tomashik, V.M.; Tomashik, Z.F.; Dimitriev, O.P.; Boruk, S.D.; Kapush, D.O. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    CdTe nanocrystals were prepared in aqueous solution by the reaction between Cd²⁺ and H₂Te, obtained electrochemically in a galvanostatic cell, in the presence of thioglycolic acid. Subsequently, we have investigated ...
  • Raman scattering in sulphide glasses 
    Tolmachov, I.D.; Stronski, A.V.; Pribylova, H.; Vlček, M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    Raman spectra of two ternary glasses of composition Ge₅As₃₇S₅₈ and As₄Ge₃₀S₆₆ have been investigated. An influence of addition of third element on the spectra of binary glasses has been studied by comparison with spectra ...
  • Temperature dependence of contact resistance of Au−Ti−Pd2Si−n⁺ -Si ohmic contacts 
    Belyaev, A.E.; Boltovets, N.S.; Konakova, R.V.; Kudryk, Ya.Ya.; Sachenko, A.V.; Sheremet, V.N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    We investigated temperature dependence of contact resistance of an Au−Ti−Pd₂Si ohmic contact to heavily doped n⁺ -Si. The contact resistance increases with temperature owing to conduction through the metal shunts. In ...
  • Thermal simulation of heterogeneous structural components in microelectronic devices 
    Gavrysh, V.I.; Fedasyuk, D.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    The steady state nonlinear problem of thermal conduction for isotropic strip with foreign rectangular inclusion that heats as an internal thermal source with heat dissipation has been considered. The methodology to solve ...
  • Electrical properties of n-SnS₂/n-CdIn₂Te₄ heterostructure 
    Gorley, P.M.; Grushka, Z.M.; Grushka, O.G.; Gorley, P.P.; Zabolotsky, I.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    Using the method of deposition over the optical contact, the authors created nSnS2/n-CdIn₂Te₄ heterojunction and investigated temperature evolution of its currentvoltage characteristics under the forward bias U ≤ 3 V. ...
  • Nonlinear stochastic relaxation dynamics in spin-crossover solid-state compounds 
    Gudyma, Iu.V.; Maksymov, A.Iu. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    A study of dynamic of spin-crossover solid-state compound has been carried out. The investigated macroscopic phenomenological model for molecular spin-crossover complexes with optical control parameter has been extended ...
  • Complex degree of coherency inherent to laser images of blood plasma polycrystalline networks 
    Ushenko, Yu.A.; Istratiy, V.V.; Dubolazov, A.V.; Angelsky, A.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    Given in this paper are theoretical basics for correlation-phase analysis of laser images inherent to human blood plasma. Also presented are comparative results of measurements aimed at coordinate distributions of the ...
  • Optical efficiency of Ag and Au nanoparticles 
    Dmitruk, N.L.; Malynych, S.Z.; Moroz, I.E.; Kurlyak, V.Yu. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    In this paper, we present the results of calculations aimed at the optical radiation efficiency of Ag and Au nanoparticles, which is defined by the ratio of the scattering cross-section to the extinction one. The ...
  • Smoothing cubic spline approximation of silicon diode temperature sensors thermometric characteristics 
    Ivashchenko, O.M.; Shwarts, Yu.M.; Shwarts, M.M.; Kopko, D.P.; Sypko, N.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    Shown in this paper is the efficiency of a smoothing cubic spline approximation for temperature response curves (TRC) of wide range silicon diode thermometers (SDTs). The offered calculation algorithm allows to describe ...
  • Effect of pulsing magnetic field on radiative recombination spectra of GaP and InP single crystals 
    Milenin, V.V.; Red’ko, R.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    We present the results of investigations concerning the effect caused by weak magnetic field (B = 15 mT and 60 mT) treatment on GaP and InP single crystals of impurity-defect composition. This effect was found when ...
  • Magnetic susceptibility of n- and p-Si single crystals containing thermodonors 
    Babich, V.М.; Luchkevych, M.M.; Tsmots, V.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    Using a series of experimental methods (Hall effect, electron paramagnetic resonance and magnetic susceptibility (MS, χ)) comparison has been made for the kinetics of formation inherent to different types of thermodonors ...
  • Formation of ohmic contacts to n(p)-gan and measurement of their contact resistivity 
    Boltovets, M.S.; Ivanov, V.M.; Konakova, R.V.; Kudryk, Ya.Ya.; Milenin, V.V.; Shynkarenko, V.V.; Sheremet, V.M.; Sveshnikov, Yu.N.; Yavich, B.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    We propose multilayer ohmic contacts to n- and p-GaN layers, with titanium boride as diffusion barrier. It is shown that the optimal method of contact resistivity measurement is the transmission line method (TLM) with ...
  • Controlling the photoluminescence spectra of porous nc-Si–SiOx structures by vapor treatment 
    Dan’ko, V.A.; Bratus, V.Ya.; Indutnyi, I.Z.; Lisovskyy, I.P.; Zlobin, S.O.; Michailovska, K.V.; Shepeliavyi, P.E. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    The effect of HF and H₂O₂ vapor treatment on the spectral composition and intensity of photoluminescence (PL) in porous oblique deposited nc-Si–SiOx structures have been studied using FTIR, electron-spin resonance (EPR) ...
  • Changes in nanostructure and micro-plastic properties of silicon crystals under action of magnetic fields 
    Steblenko, L.P.; Kurylyuk, A.N.; Koplak, O.V.; Krit, O.N.; Tkach, V.N.; Naumenko, S.N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    Experimental data obtained in this work are indicative of the fact that magnetic field stimulates processes of structural relaxation in silicon. Using the secondary-ion mass-spectrometry method, we found that the ...
  • Effect of pressure on the characteristics of Schottky barrier diodes made of overcompensated semiconductor 
    Vlasov, S.I.; Saparov, F.A.; Ismailov, K.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    We studied the effect of uniform compression on characteristics of Au–n-Si Schottky barrier diodes made of overcompensated semiconductor. It is shown that overcompensation is caused by formation of structural defects ...
  • Morphology and dielectric properties of polymer dispersed liquid crystal with magnetic nanoparticles 
    Kopčanský, P.; Timko, M.; Mitrova, Z.; Zavisova, V.; Koneracká, M.; Tomašovičov, N.; Tomčo, L.; Gornitska, O.P.; Kovalchuk, O.V.; Bykov, V.M.; Kovalchuk, T.M.; Studenyak, I.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    It has been shown that introduction of magnetic nanoparticles (MN) of various shapes with the concentration 10⁻¹ wt.% into polymer dispersed liquid crystal (PDLC) causes two effects: the size of liquid crystal droplets ...
  • Methods of cluster analysis in sensor engineering: advantages and faults 
    Burlachenko, Yu.V.; Snopok, B.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    We consider the crisp and fuzzy partitioning techniques of cluster analysis bearing in mind their application for classification of data obtained with chemical sensor arrays. The advantage of the cluster analysis techniques ...
  • Compact-sized excimer laser with two-side preionization 
    Baschenko, S.M.; Marchenko, L.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    Compact-sized monopulse excimer laser with the foot-print equal to only 250×80 mm, total height 250 mm and beam axis height 50 mm was designed. Output energy at the wavelength 308 nm (XeCl* mixture) is 5 mJ, maximal ...
  • Splitting the eigenvectors space for Kildal’s Hamiltonian 
    Chuiko, G.P.; Don, N.L. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    The rational canonical form of Kildal’s Hamiltonian has been obtained as a matrix with two identical diagonal blocks. It allowed to formulate and strictly prove few common assertions. Each of the eigenvalues of Kildal’s ...

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