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Effect of pulsing magnetic field on radiative recombination spectra of GaP and InP single crystals
Репозиторій DSpace/Manakin
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- Фізико-технічні та математичні науки
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- Відділення фізики і астрономії
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- Semiconductor Physics Quantum Electronics & Optoelectronics
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- Semiconductor Physics Quantum Electronics & Optoelectronics, 2010, том 13
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- Semicond. Physics Quantum Electronics & Optoelectronics, 2010, № 4
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Effect of pulsing magnetic field on radiative recombination spectra of GaP and InP single crystals
Інший ID:
PACS 68.55.-a, 71.55.Eq
Посилання:
Effect of pulsing magnetic field on radiative recombination spectra
of GaP and InP single crystals / V.V. Milenin, R.A. Red’ko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 4. — С. 379-383. — Бібліогр.: 18 назв. — англ.
Підтримка:
Authors are grateful to Dr. R.V. Konakova for her
permanent interest to the work and fruitful discussions.
Дата:
2010
Переглядів:
599
Завантажень:
433
Анотація:
We present the results of investigations concerning the effect caused by weak
magnetic field (B = 15 mT and 60 mT) treatment on GaP and InP single crystals of
impurity-defect composition. This effect was found when studying the radiative
recombination (luminescence) spectra within the range 0.6 to 2.5 µm at 77 K. It was
obtained that a short-term influence of field initiates long-term changes in the intensity of
radiative recombination inherent to centers of different nature. General regularities in
behavior of the luminescence intensity have been found. This intensity changes with the
concentration of recombination centers. A possible mechanism of observed
transformations has been discussed.
