Посилання:Formation of ohmic contacts to n(p)-gan and measurement
of their contact resistivity / M.S. Boltovets, V.M. Ivanov, R.V. Konakova, Ya.Ya. Kudryk, V.V. Milenin, V.V. Shynkarenko, V.M. Sheremet, Yu.N. Sveshnikov, B.S. Yavich // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 4. — С. 337-342. — Бібліогр.: 37 назв. — англ.
Підтримка:This work was supported by the Project No 31/4.2.3.1/33
of the Governmental task scientific and technical program
“Development and implementation of energy-saving light
sources and illumination systems based on them”
(Regulation of the Cabinet of Ministers of Ukraine
No 632 from July 9, 2008). The development of varactor
diodes was carried out under the INCO−COPERNICUS
Program (Project No 977131 “MEMSWAVE”).
We propose multilayer ohmic contacts to n- and p-GaN layers, with titanium
boride as diffusion barrier. It is shown that the optimal method of contact resistivity
measurement is the transmission line method (TLM) with circular contact geometry. The
Ti−Al−TiBx−Au contact metallization to n-GaN retains its layer structure after thermal
annealing at temperatures up to 900 °C. The contact resistivity ρс is (6.69±1.67)×10⁻⁵
Ω⋅cm². For the Au−TiBx−Ni−p-GaN contact structure, the contact resistivity is
(1±0.15)×10⁻³ Ω⋅cm²
.