Наукова електронна бібліотека
періодичних видань НАН України

Перегляд Semicond. Physics Quantum Electronics & Optoelectronics, 2010, № 4 за назвою

Репозиторій DSpace/Manakin

Перегляд Semicond. Physics Quantum Electronics & Optoelectronics, 2010, № 4 за назвою

Сортувати за: Порядок: Результатів:

  • Author Index 2010 
    Автор відсутній (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
  • CdTe quantum dots precipitation of monodisperse fractions from colloid solutions 
    Savchuk, O.A.; Trishchuk, L.I.; Mazarchuk, I.A.; Tomashik, V.M.; Tomashik, Z.F.; Dimitriev, O.P.; Boruk, S.D.; Kapush, D.O. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    CdTe nanocrystals were prepared in aqueous solution by the reaction between Cd²⁺ and H₂Te, obtained electrochemically in a galvanostatic cell, in the presence of thioglycolic acid. Subsequently, we have investigated ...
  • Changes in nanostructure and micro-plastic properties of silicon crystals under action of magnetic fields 
    Steblenko, L.P.; Kurylyuk, A.N.; Koplak, O.V.; Krit, O.N.; Tkach, V.N.; Naumenko, S.N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    Experimental data obtained in this work are indicative of the fact that magnetic field stimulates processes of structural relaxation in silicon. Using the secondary-ion mass-spectrometry method, we found that the ...
  • Compact-sized excimer laser with two-side preionization 
    Baschenko, S.M.; Marchenko, L.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    Compact-sized monopulse excimer laser with the foot-print equal to only 250×80 mm, total height 250 mm and beam axis height 50 mm was designed. Output energy at the wavelength 308 nm (XeCl* mixture) is 5 mJ, maximal ...
  • Complex degree of coherency inherent to laser images of blood plasma polycrystalline networks 
    Ushenko, Yu.A.; Istratiy, V.V.; Dubolazov, A.V.; Angelsky, A.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    Given in this paper are theoretical basics for correlation-phase analysis of laser images inherent to human blood plasma. Also presented are comparative results of measurements aimed at coordinate distributions of the ...
  • Complex destruction of near-surface silicon layers of Si-SiO₂ structure 
    Yatsunskiy, I.R.; Kulinich, O.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    The structure of near-surface silicon layers of Si-SiO₂ has been investigated. It was observed the complex destruction of these layers caused by relaxation of mechanical stresses. The magnitude of mechanical stresses ...
  • Controlling the photoluminescence spectra of porous nc-Si–SiOx structures by vapor treatment 
    Dan’ko, V.A.; Bratus, V.Ya.; Indutnyi, I.Z.; Lisovskyy, I.P.; Zlobin, S.O.; Michailovska, K.V.; Shepeliavyi, P.E. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    The effect of HF and H₂O₂ vapor treatment on the spectral composition and intensity of photoluminescence (PL) in porous oblique deposited nc-Si–SiOx structures have been studied using FTIR, electron-spin resonance (EPR) ...
  • Double- and triple-crystal X-ray diffractometry of microdefects in silicon 
    Molodkin, V.B.; Olikhovskii, S.I.; Kyslovskyy, Ye.M.; Len, E.G.; Reshetnyk, O.V.; Vladimirova, T.P.; V.V. Lizunov, V.V.; Lizunova, S.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    The generalized dynamical theory of X-ray scattering by real single crystals allows to self-consistently describe intensities of coherent and diffuse scattering measured by double- and triple-crystal diffractometers (DCD ...
  • Effect of pressure on the characteristics of Schottky barrier diodes made of overcompensated semiconductor 
    Vlasov, S.I.; Saparov, F.A.; Ismailov, K.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    We studied the effect of uniform compression on characteristics of Au–n-Si Schottky barrier diodes made of overcompensated semiconductor. It is shown that overcompensation is caused by formation of structural defects ...
  • Effect of pulsing magnetic field on radiative recombination spectra of GaP and InP single crystals 
    Milenin, V.V.; Red’ko, R.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    We present the results of investigations concerning the effect caused by weak magnetic field (B = 15 mT and 60 mT) treatment on GaP and InP single crystals of impurity-defect composition. This effect was found when ...
  • Electrical properties of n-SnS₂/n-CdIn₂Te₄ heterostructure 
    Gorley, P.M.; Grushka, Z.M.; Grushka, O.G.; Gorley, P.P.; Zabolotsky, I.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    Using the method of deposition over the optical contact, the authors created nSnS2/n-CdIn₂Te₄ heterojunction and investigated temperature evolution of its currentvoltage characteristics under the forward bias U ≤ 3 V. ...
  • Electrical transport in thin films of glassy Ge₄₀Te₆₀-xSbx alloys 
    Shukla, S.; Kumar, S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    Glassy alloys of Ge₄₀Te₆₀-xSbx (where x = 2, 4, 6 and 10) were prepared by conventional rapid melt-quenching technique. The nature of the alloys was ascertained through X-ray diffraction pattern of the samples. Thin ...
  • Formation of ohmic contacts to n(p)-gan and measurement of their contact resistivity 
    Boltovets, M.S.; Ivanov, V.M.; Konakova, R.V.; Kudryk, Ya.Ya.; Milenin, V.V.; Shynkarenko, V.V.; Sheremet, V.M.; Sveshnikov, Yu.N.; Yavich, B.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    We propose multilayer ohmic contacts to n- and p-GaN layers, with titanium boride as diffusion barrier. It is shown that the optimal method of contact resistivity measurement is the transmission line method (TLM) with ...
  • Magnetic susceptibility of n- and p-Si single crystals containing thermodonors 
    Babich, V.М.; Luchkevych, M.M.; Tsmots, V.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    Using a series of experimental methods (Hall effect, electron paramagnetic resonance and magnetic susceptibility (MS, χ)) comparison has been made for the kinetics of formation inherent to different types of thermodonors ...
  • Methods of cluster analysis in sensor engineering: advantages and faults 
    Burlachenko, Yu.V.; Snopok, B.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    We consider the crisp and fuzzy partitioning techniques of cluster analysis bearing in mind their application for classification of data obtained with chemical sensor arrays. The advantage of the cluster analysis techniques ...
  • Morphology and dielectric properties of polymer dispersed liquid crystal with magnetic nanoparticles 
    Kopčanský, P.; Timko, M.; Mitrova, Z.; Zavisova, V.; Koneracká, M.; Tomašovičov, N.; Tomčo, L.; Gornitska, O.P.; Kovalchuk, O.V.; Bykov, V.M.; Kovalchuk, T.M.; Studenyak, I.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    It has been shown that introduction of magnetic nanoparticles (MN) of various shapes with the concentration 10⁻¹ wt.% into polymer dispersed liquid crystal (PDLC) causes two effects: the size of liquid crystal droplets ...
  • Nonlinear interaction of the elliptically polarized light with CdSxSe₁₋x quantum dots 
    Kulish, M.R.; Malysh, M.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    Peculiarities of the influence of ruby laser elliptically polarized light on the absorption saturation in glass with CdSxSe₁₋x nanocrystals and absorption saturation on light polarization were investigated. It was ...
  • Nonlinear stochastic relaxation dynamics in spin-crossover solid-state compounds 
    Gudyma, Iu.V.; Maksymov, A.Iu. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    A study of dynamic of spin-crossover solid-state compound has been carried out. The investigated macroscopic phenomenological model for molecular spin-crossover complexes with optical control parameter has been extended ...
  • Optical efficiency of Ag and Au nanoparticles 
    Dmitruk, N.L.; Malynych, S.Z.; Moroz, I.E.; Kurlyak, V.Yu. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    In this paper, we present the results of calculations aimed at the optical radiation efficiency of Ag and Au nanoparticles, which is defined by the ratio of the scattering cross-section to the extinction one. The ...
  • Raman scattering in sulphide glasses 
    Tolmachov, I.D.; Stronski, A.V.; Pribylova, H.; Vlček, M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    Raman spectra of two ternary glasses of composition Ge₅As₃₇S₅₈ and As₄Ge₃₀S₆₆ have been investigated. An influence of addition of third element on the spectra of binary glasses has been studied by comparison with spectra ...

Пошук


Розширений пошук

Перегляд

Мій обліковий запис