Ultrasound influence on exciton emission of GaP light diodes

Домашня сторінка
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Фізико-технічні та математичні науки
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Відділення фізики і астрономії
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Semiconductor Physics Quantum Electronics & Optoelectronics
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Semiconductor Physics Quantum Electronics & Optoelectronics, 2003, том 6
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Semicond. Physics Quantum Electronics & Optoelectronics, 2003, № 2
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Ultrasound influence on exciton emission of GaP light diodes

Gontaruk, O.M. ; Khivrych, V.I. ; Pinkovska, M.B. ; Tartachnyk, V.P. ; Olikh, Ya.M. ; Vernydub, R.M. ; Opilat, V.Ya.

Інший ID: PACS: 78.55.-m, 78.60.-b, 85.60.Jb

URI: http://dspace.nbuv.gov.ua/handle/123456789/118000

Посилання: Ultrasound influence on exciton emission of GaP light diodes / O.M. Gontaruk, V.I. Khivrych, M.B. Pinkovska, V.P. Tartachnyk, Ya.M. Olikh, R.M. Vernydub, V.Ya. Opilat // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 2. — С. 223-226. — Бібліогр.: 11 назв. — англ.

Дата: 2003

Завантажень: 357

Ultrasound influence on exciton emission of GaP light diodes

Анотація:

Electroluminescence of GaP light diodes, treated by ultrasound at room and low temperatures has been studied. It has been found that short ultrasound caused improvement of red diode emission characteristics while electroluminescence degradation occurred in structures treated by prolong treatment at room temperature. Spectral curves measured under acoustic dynamic mode possess some specific features concerning fine structure. If reverse biased diodes possess microplasma initially, ultrasound action decreases its brightness. Possible mechanisms of the ultrasonic interaction with crystal structure defects have been discussed.

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