Перегляд за автором "Lysenko, V.S."

Сортувати за: Порядок: Результатів:

  • Characterization of charge trapping processes in fully-depleted UNIBOND SOI MOSFET subjected to γ-irradiation 
    Houk, Y.; Nazarov, A.N.; Turchanikov, V.I.; Lysenko, V.S.; Andriaensen, S.; Flandre, D. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2006)
    An investigation of radiation effect on edgeless accumulation mode (AM) p-channel and fully-depleted enhancement mode (EM) n-channel MOSFETs, fabricated on UNIBOND silicon on insulatior wafers (SOI), is presented in the ...
  • Effect of chemical and radiofrequency plasma treatment on photoluminescence of SiOx films 
    Indutnyy, I.Z.; Lysenko, V.S.; Min'ko, V.I.; Nazarov, A.N.; Tkachenko, A.S.; Shepeliavyi, P.E.; Dan'ko, V.A.; Maidanchuk, I.Yu. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2006)
    Effect of hydrogen radiofrequency plasma and chemical treatment on photoluminescence (PL) spectra of SiOx layers containing Si nanoparticles are investigated. Considerable PL intensity growth in the samples containing Si ...
  • Effect of oxide-semiconductor interface traps on low-temperature operation of MOSFETs 
    Lysenko, V.S.; Tyagulski, I.P.; Gomeniuk, Y.V.; Osiyuk, I.N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    Operation of n-channel MOSFET was studied at low temperatures. It has been shown that the charge state of shallow traps in the Si/SiO₂ interface is responsible for the hysteresis of transistor drain characteristics in the ...
  • Effect of the charge state of traps on the transport current in the SiC/Si heterostructure 
    Lysenko, V.S.; Tyagulski, I.P.; Gomeniuk, Y.V.; Osiyuk, I.N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    Forward and reverse currents in the heterostructure “amorphous SiC/p-Si” were studied in the temperature range 30 – 80 K. It has been found that in different ranges of the applied voltage the transport current is described ...
  • Electrical and light-emitting properties of silicon dioxide co-implanted by carbon and silicon ions 
    Nazarov, A.N.; Osiyuk, I.N.; Tiagulskyi, S.I.; Lysenko, V.S.; Tyagulskyy, I.P.; Torbin, V.N.; Omelchuk, V.V.; Nazarova, T.N.; Rebohle, L.; Skorupa, W. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2008)
    In this paper we explore the electrophysical and electroluminescence (EL) properties of thermally grown 350 nm thick SiO₂ layers co-implanted with Si⁺ and C⁺ ions. The implanting fluencies were chosen in such a way ...
  • Electroluminescent properties of Tb-doped carbon-enriched silicon oxide 
    Tiagulskyi, S.I.; Nazarov, A.N.; Gordienk, S.O.; Vasin, A.V.; Rusavsky, A.V.; Nazarova, T.M.; Gomeniuk, Yu.V.; Rudko, G.V.; Lysenko, V.S.; Rebohle, L.; Voelskow, M.; Skorupa, W.; Koshka, Y. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2014)
    An electroluminescent device utilizing a heterostructure of amorphous terbium doped carbon-rich SiOx (a - SiOx : C : Tb) on silicon has been developed. The a - SiOx : C : Tb active layer was formed by RF magnetron ...
  • Enhancement of CdSSe QD exciton luminescence efficiency by hydrogen RF plasma treatment 
    Kunets, V.P.; Kulish, N.R.; Strelchuk, V.V.; Nazarov, A.N.; Tkachenko, A.S.; Lysenko, V.S.; Lisitsa, M.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    We report an enhancement of exciton luminescence in CdSxSe₁₋x QD embedded into borosilicate glass matrix and then treated by the low-temperature hydrogen RF plasma. Results clearly confirm the essential crushing of the ...
  • Erratum: Electrical and light-emitting properties of silicon dioxide co-implanted by carbon and silicon ions 
    Nazarov, A.N.; Osiyuk, I.N.; Tiagulskyi, S.I.; Lysenko, V.S.; Tyagulskyy, I.P.; Torbin, V.N.; Omelchuk, V.V.; Nazarova, T.M.; Rebohle, L.; Skorupa, W. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2009)
    In this paper, we explore the electrophysical and electroluminescence (EL) properties of thermally grown 350 nm thick SiO₂ layers co-implanted with Si⁺ and C⁺ ions. The implanting fluencies were chosen in such a way ...
  • Graphene layers fabricated from the Ni/a-SiC bilayer precursor 
    Nazarov, A.N.; Vasin, A.V.; Gordienko, S.O.; Lytvyn, P.M.; Strelchuk, V.V.; Nikolenko, A.S.; Stubrov, Yu.Yu.; Hirov, A.S.; Rusavsky, A.V.; Popov, V.P.; Lysenko, V.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2013)
    This paper considers a synthesis of graphene flakes on the Ni surface by vacuum long and nitrogen rapid thermal treatment of the “sandwich” amorphous (a) SiC/Ni multilayer deposited on silicon wafer by magnetron sputtering ...
  • High-temperature characteristics of zone-melting recrystallized silicon-on-insulator MOSFETs 
    Lysenko, V.S.; Rudenko, T.E.; Nazarov, A.N.; Kilchitskaya, V.I.; Rudenko, A.N.; Limanov, A.B.; Colinge, J.-P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1998)
    The characteristics of enhancement-mode MOS transistors fabricated on zone-melting recrystallized (ZMR) silicon-on-insulator (SOI) films were systematically experimentally investigated in the temperature range 25–300°C. ...
  • Hydrogen plasma treatment of silicon thin-film structures and nanostructured layers 
    Nazarov, A.N.; Lysenko, V.S.; Nazarova, T.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2008)
    The review concentrates on the analysis of the RF hydrogen plasma effect on thin-film metal-dioxide-silicon and silicon-dioxide silicon structures which are a modern basis of micro- and nanoelectronics. The especial ...
  • Influence of traps in gate oxide-Si film transition layers on FD MOSFET's characteristics at cryogenic emperatures 
    Lysenko, V.S.; Tyagulsky, I.P.; Osiyuk, I.N.; Nazarov, A.N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    The results of experiments on the influence of recharging the electron traps in a Si-SiO₂ transition layer on the low-temperature characteristics of fully depleted silicon in insulator MOSFET devices are presented. It ...
  • Modification of electroluminescence and charge trapping in germanium implanted metal-oxide-silicon light-emitting diodes with plasma treatment 
    Nazarov, A.N.; Skorupa, W.; Vovk, Ja.N.; Osiyuk, I.N.; Tkachenko, A.S.; Tyagulskii, I.P.; Lysenko, V.S.; Gebel, T.; Rebohle, L.; Yankov, R.A.; Nazarova, T.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    We have studied the effect of plasma treatment on both the electroluminescent (EL) properties of Ge-implanted light-emitting metal-oxide silicon (MOS) devices and the charge trapping processes occurring therein. Under ...
  • Novel hysteresis effect in ultrathin epitaxial Gd₂O₃ high-k dielectric 
    Nazarov, A.N.; Gomeniuk, Y.V.; Gomeniuk, Y.Y.; Lysenko, V.S.; Gottlob, H.D.B.; Schmidt, M.; Lemme, M.C.; Czernohorsky, M.; Ostenc, H.J. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2008)
    Charge trapping in ultrathin high-k Gd₂O₃ dielectric leading to appearance of hysteresis in C–V curves is studied by capacitance-voltage, conductance-frequency and current-voltage techniques at different temperatures. ...
  • Photoconductivity mechanism in structures with Ge-nanoclusters grown on Si(100) surface 
    Melnichuk, Ye.Ye.; Hyrka, Yu.V.; Kondratenko, S.V.; Kozyrev, Yu.N.; Lysenko, V.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2014)
    Interband optical transitions in the epitaxial Si/Ge heterostructures with Ge nanoislands grown on Si(100) surface were investigated using photocurrent spectroscopy. The mechanism of photoconductivity was discussed. It ...
  • Photoluminescent properties of oxidized stochiometric and carbon-rich amorphous Si₁₋xCx:H films 
    Vasin, A.V.; Ishikawa, Y.; Rusavsky, A.V.; Nazarov, A.N.; Konchitz, A.A.; Lysenko, V.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2015)
    Near-stochiometric and carbon-rich a-Si₁₋xCx:H thin films were deposited using the magnetron sputtering of Si target in Ar/CH₄ gas mixture. As-deposited nearstochimetric (x = 0.5) sample showed weak blue photoluminescence ...
  • Properties of SiGe/Si heterostructures fabricated by ion implantation technique 
    Gomeniuk, Y.V.; Lysenko, V.S.; Osiyuk, I.N.; Tyagulski, I.P.; Valakh, M.Ya.; Yukhimchuk, V.A.; Willander, M.; Patel, C.J. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    A comprehensive electrical characterisation of the SiGe/Si heterostructures has been performed in the wide temperature range (10270 K). Four structures fabricated by the Ge⁺ ion implantation technique at different substrate ...
  • The spatial separation of electron-hole pairs in Si/Ge heterostructures 
    Lysenko, V.S.; Kondratenko, S.V.; Melnichuk, Ye.Ye.; Terebinska, M.I.; Tkachuk, O.I.; Kozyrev, Yu.N.; Lobanov, V.V. (Поверхность, 2015)
    Photogeneration and transport of nonequilibrium charge carriers, and the determination of photoresponce mechanisms in semiconductor SiGe/Si and SiGe/SiO₂/p-Si heterostructures with nanoisland were investigated. The structures ...