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Characterization of charge trapping processes in fully-depleted UNIBOND SOI MOSFET subjected to γ-irradiation
Репозиторій DSpace/Manakin
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- Фізико-технічні та математичні науки
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- Відділення фізики і астрономії
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- Semiconductor Physics Quantum Electronics & Optoelectronics
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- Semiconductor Physics Quantum Electronics & Optoelectronics, 2006, том 9
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- Semicond. Physics Quantum Electronics & Optoelectronics, 2006, № 2
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Characterization of charge trapping processes in fully-depleted UNIBOND SOI MOSFET subjected to γ-irradiation
Інший ID:
PACS 85.30.Tv, 85.30.De, 81.40.Wx
Посилання:
Characterization of charge trapping processes in fully-depleted UNIBOND SOI MOSFET subjected to γ-irradiation / Y. Houk, A.N. Nazarov, V.I. Turchanikov, V.S. Lysenko, S. Andriaensen, D. Flandre // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 2. — С. 69-74. — Бібліогр.: 7 назв. — англ.
Підтримка:
The authors thank the technical staff of the UCL
Microelectronics Lab for device fabrication. This work
has been supported by STCU project No 2332.
Дата:
2006
Переглядів:
683
Завантажень:
360
Анотація:
An investigation of radiation effect on edgeless accumulation mode (AM) p-channel and fully-depleted enhancement mode (EM) n-channel MOSFETs, fabricated on UNIBOND silicon on insulatior wafers (SOI), is presented in the paper. Characterization of trapped charge in the gate and buried oxides of the devices was performed by measuring only the front-gate transistors. It was revealed that the irradiation effect on EM n-MOSFET is stronger than that on AM p-MOSFET. Radiation-induced positive charge in the buried oxide proved to invert back interface what causes back channel creation in EM n-MOSFET but no such effect in AM p-MOSFET has been not observed. The effect of improving the quality of both interfaces for small irradiation doses is demonstrated.
