Effect of chemical and radiofrequency plasma treatment on photoluminescence of SiOx films

Домашня сторінка
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Фізико-технічні та математичні науки
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Відділення фізики і астрономії
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Semiconductor Physics Quantum Electronics & Optoelectronics
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Semiconductor Physics Quantum Electronics & Optoelectronics, 2006, том 9
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Semicond. Physics Quantum Electronics & Optoelectronics, 2006, № 1
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Effect of chemical and radiofrequency plasma treatment on photoluminescence of SiOx films

Indutnyy, I.Z. ; Lysenko, V.S. ; Min'ko, V.I. ; Nazarov, A.N. ; Tkachenko, A.S. ; Shepeliavyi, P.E. ; Dan'ko, V.A. ; Maidanchuk, I.Yu.

Інший ID: PACS 78.66.Jg

URI: http://dspace.nbuv.gov.ua/handle/123456789/121580

Посилання: Effect of chemical and radiofrequency plasma treatment on photoluminescence of SiOx films / I.Z. Indutnyy, V.S. Lysenko, I.Yu. Maidanchuk, V.I. Min'ko, A.N. Nazarov, A.S. Tkachenko, P.E. Shepeliavyi, V.A. Dan'ko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 8, № 1. — С. 9-13. — Бібліогр.: 18 назв. — англ.

Дата: 2006

Завантажень: 387

Effect of chemical and radiofrequency plasma treatment on photoluminescence of SiOx films

Анотація:

Effect of hydrogen radiofrequency plasma and chemical treatment on photoluminescence (PL) spectra of SiOx layers containing Si nanoparticles are investigated. Considerable PL intensity growth in the samples containing Si nanocrystals (nc-Si-SiOx) after plasma treatment is observed. The process saturates for time of 15 minutes. Chemical treatment in ammonia and acetone vapour before thermal annealing of SiOx layers leads to the considerable changes in PL spectra effecting both on the band shape and on the intensity. The possibility of controlled changes in PL spectra in nc-Si-SiO₂ layers is shown.

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