Посилання:Novel hysteresis effect in ultrathin epitaxial Gd₂O₃ high-k dielectric / A. N. Nazarov, Y. V. Gomeniuk, Y. Y. Gomeniuk, V. S. Lysenko, H. D. B. Gottlob, M. Schmidt, M. C. Lemme, M. Czernohorsky, H. J. Ostenc // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2008. — Т. 11, № 4. — С. 324-328. — Бібліогр.: 12 назв. — англ.
Підтримка:This work has been partly funded by the European
Commission under the frame of the Network of
Excellence “SINANO” (Silicon-based Nanodevices,
IST-506844) and the German Federal Ministry of
Education and Research (BMBF) in the “MEGA EPOS”
project (13N9260).
Charge trapping in ultrathin high-k Gd₂O₃ dielectric leading to appearance of
hysteresis in C–V curves is studied by capacitance-voltage, conductance-frequency and
current-voltage techniques at different temperatures. It was shown that the large leakage
current at a negative gate voltage causes the reversible trapping of the positive charge in
the dielectric layer, without electrical degradation of the dielectric and dielectricsemiconductor
interface. The capture cross-sections of the hole traps are around 10⁻¹⁸ and
2 × 10⁻²⁰ cm²
. The respective shift of the C–V curve correlates with a “plateau” at the
capacitance corresponding to weak accumulation at the silicon interface.