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Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics, 2003, том 6 за датою випуску

Репозиторій DSpace/Manakin

Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics, 2003, том 6 за датою випуску

Сортувати за: Порядок: Результатів:

  • Theory of the free-carrier absorption in quantum wires with boundary roughness scattering 
    Ibragimov, G.B. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    A theory of free carrier absorption is given for quantum wires when carriers are scattered by boundary roughness and the radiation field is polarized along the length of the wire. The free-carrier absorption coefficient ...
  • High-temperature configurations of dimers in Si (001) surface layers 
    Kiv, A.E.; Maksymova, T.I.; Moiseenko, N.V.; Soloviev, V.N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    Molecular Dynamics (MD) simulation of Si (001) surface layers was performed. In the modified algorithm of MD the potential is corrected on each step of calculation. The corrections account the re-hybridization of chemical ...
  • High-power low-frequency current oscillations in germanium samples 
    Pavljuk, S.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    Experimental investigation of high-power low-frequency current oscillations in germanium samples with low injecting contacts is discussed in this article. The results obtained were explained by periodic formation, transport ...
  • Polyassociative thermodynamical model of A²B⁶ semiconductor melt and P-T-X equilibria in Cd-Hg-Te system: 2. Phase equilibria in initial two-component systems. Cd-Te system 
    Moskvin, P.P.; Rashkovets'kyi, L.V.; Kavertsev, S.V.; Zhovnir, G.I.; Ruden'kyi, A.O. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    Phase equilibria in Cd-Hg-Te system are analyzed in the framework of the polyassociative solution model. Checking the mentioned model applicability to description of phase equilibria and search of system thermodynamical ...
  • Changes of anisotropy of dilatative and optical properties of DGN crystal at ferroelectric phase transition 
    Andriyevsky, B.V.; Romanyuk, M.O.; Dumka, Yu.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    Temperature dependences of the linear dimension L(T) and the optical path difference D(T) of the ferroelectric diglycine nitrate crystals, (NH₂CH₂COOH)₂ HNO₃, have been measured for three principal directions of optical ...
  • Electron field emission from SiOx films 
    Evtukh, А.А.; Indutnyy, I.Z.; Lisovskyy, I.P.; Litvin, Yu.M.; Litovchenko, V.G.; Lytvyn, P.M.; Mazunov, D.O.; Rassamakin, Yu.V.; Shepeliavyi, P.E. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    Efficient electron field emission from silicon flat cathode coated with SiOx film (x 0.3-0.5) was observed both before and after thermal (1000 °C) annealing with subsequent etching in HF solution. Oxide films were produced ...
  • Evolution of defective structure of the irradiated silicon during natural ageing 
    Fodchuk, I.M.; Gutsulyak, T.G.; Himchynsky, O.G.; Olijnich-Lysjuk, A.V.; Raransky, N.D. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    The defective structure of silicon single crystals grown by Chochralski method (Cz-Si) before and after an irradiation by high-energy electrons and gamma beams (E ~ 18 MeV) have been studied by the X-rey acoustic resonance ...
  • Effect of constant electric field on electronic absorption spectra of dye-doped amorphous polymer films 
    Davidenko, N.A.; Chuprin, N.G.; Zabolotny, M.A.; Derevyanko, N.A.; Ishchenko, A.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    The change of an electronic absorption coefficient of polymer films, doped by symmetric cationic polymethine dye is researched in an external constant electric field. This effect are characterised by an increase of intensity ...
  • Ultrasound influence on exciton emission of GaP light diodes 
    Gontaruk, O.M.; Khivrych, V.I.; Pinkovska, M.B.; Tartachnyk, V.P.; Olikh, Ya.M.; Vernydub, R.M.; Opilat, V.Ya. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    Electroluminescence of GaP light diodes, treated by ultrasound at room and low temperatures has been studied. It has been found that short ultrasound caused improvement of red diode emission characteristics while ...
  • Studies of CdHgTe as a material for x- and γ-ray detectors 
    Kosyachenko, L.A.; Kulchynsky, V.V.; Maslyanchuk, O.L.; Paranchych, S.Yu.; Sklyarchuk, V.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    Optical, electric and photoelectric properties of Cd₁₋xHgxTe alloy with a low Hg content (x = 0.05) have been studied. The depth of impurity levels determining the conductivity of the material, their concentration and ...
  • Peculiarities of injection phenomena in heavily doped silicon structures and development of radiation-resistant diode temperature sensors 
    Shwarts, Yu.M.; Sokolov, V.N.; Shwarts, M.M.; Venger, E.F. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    To explain the experimental behaviour of differential characteristics (ideality factor, differential resistance) before and after radiation influence, a theoretical model of injection current flow mechanisms for the silicon ...
  • Dielectric response of disordered ferroelectrics with embedded charged clusters 
    Morozovska, A.N.; Eliseev, E.A.; Obukhovsky, V.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    The model of static charged clusters, which adequately describes the dielectric hysteresis and permittivity of disordered ferroelectrics with non-isovalent impurities, has been proposed. The main result of paper is modified ...
  • Synthesis, recording and metrology of laser beams with phase singularities 
    Ivanovskyy, A.A.; Basistiy, I.V.; Soskin, M.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    The main task of the work was obtaining the high efficient diffraction elements to generate high quality laser beams with phase singularities. The method of recording such diffractive structures on the organic photoresist ...
  • Growing Cd₁₋x₋yMnyHgxTe single crystals and their optoelectronic properties 
    Paranchych, S.Yu.; Paranchych, L.D.; Tanasyuk, Yu.V.; Romanyuk, V.R.; Makogonenko, V.M.; Yurtsenyuk, R.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    Single crystals of Cd₁₋x₋yMnyHgxTe:V (х = 0.05; у = 0.03-0.07, NV = 1∙10¹⁹ cm⁻³) have been grown and their electrical and optical properties have been studied. The transmission spectra of the samples with the composition ...
  • Diffusion and mobility of native point defects in narrow-gap Hg₁-xCdxTe crystals 
    Elizarov, A.I.; Kurbanov, K.R.; Bogoboyashchyy, V.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    Results of investigations of mercury vacancy diffusion in the narrow-gap Hg₁-xCdxTe crystals are presented. A new theory for mercury diffusion in a gradient of native defect concentration is proposed. The theory takes into ...
  • The way of photonic crystal formation in A³B³ and A²B⁶ semiconductors 
    Kamuz, A.M.; Oleksenko, P.Ph.; Kamuz, O.A.; Kamuz, V.G. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    It is shown that under influence of irreversible gigantic modification in monocrystalline A³B³ and A²B⁶ semiconductors, local areas with the highly changed refractive index are created. It was shown that a complex refraction ...
  • An arithmetic logic unit of a computer based on single electron transport system 
    Biswas, A.K.; Sarkar, S.K. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    A simple two-way switching can be modified utilizing optical switching, electron-wave modulation and single-electron transport. In this work an arithmetic-logic unit is designed by employing single-electron Binary Decision ...
  • Relaxation and thermoinduced processes in glassy HgSe(x)-GeSe₂(₁-x) alloys 
    Halyan, V.V.; Bozhko, V.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    Spectra of absorption in glassy HgSe(x)-GeSe₂(₁-x) (x = 42, 46, 54) alloys were studied. Sustained relaxation processes - a shift of the optical absorption edge to longer wavelength - were detected. Also observed was a ...
  • Electric and dielectric properties of glasses of Cu-Sb-S-I system 
    Rubish, V.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    D.c. and a.c. conductivity (d(0) and d(w )) and dielectric parameters (d and tgd ) of Cu-Sb-S-I system glasses are investigated in 1.0*10⁴ - 6.0*10⁷ Hz frequency range and 170-400 K temperature interval. In the glasses of ...
  • The energy structure of free electrons for semiconductor in the field of cylindrical symmetry 
    Stakhira, J.M.; Stakhira, R.J. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    The energetic structure of semiconductor free electrons in the field of cylindrical symmetry whose radial part is a sum of two components, which depend on radial coordinate according to quadratic and biquadratic laws has ...

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