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Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics, 2003, том 6 за назвою

Репозиторій DSpace/Manakin

Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics, 2003, том 6 за назвою

Сортувати за: Порядок: Результатів:

  • About manifestation of the piezojunction effect in diode temperature sensors 
    Borblik, V.L.; Shwarts, Yu.M.; Venger, E.F. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    An analytical theory of piezojunction effect has developed in application to silicon diode temperature n+-p type sensors, which for the first time takes into account three-subbands structure of the valence band of silicon. ...
  • Acoustoelectric transient spectroscopy of microwave treated GaAs-based structures 
    Olikh, O.Ya. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    The effects of microwave (2.45 GHz) treatment influence on the cross section for electron capture and the energy of the deep levels in the forbidden gap of GaAs monocrystals and n-n⁺ epitaxial structures have been investigated ...
  • A fresh approach to interpretation of visible photoluminescence spectra in silicon nanostructures 
    Sachenko, A.V.; Kryuchenko, Yu.V.; Manoilov, E.G.; Kaganovich, E.B. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    To understand both multimodal character of stationary photoluminescence (PL) spectra and observed peculiarities in time-resolved PL in low-dimensional Si structures, it is proposed to take into account an additional effect, ...
  • Analysis of exciton reflection spectrum of 2H-PbI₂ layered single crystals with atomically clean surface 
    Dorogan, V.G.; Zhydkov, V.O.; Motsnyi, F.V.; Smolanka, O.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    We performed the computer modelling of the dispersion dependences of real ε₁(E) and imaginary ε₂(E) parts of complex dielectric function ε(E) for 2H-PbI₂ crystals with atomically clean surface at the temperature 5 K and ...
  • Analysis of luminescence method applicability for determination of Cd₁₋xZnxTe composition 
    Glinchuk, K.D.; Litovchenko, N.M.; Strilchuk, O.N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    Physical fundamentals are analyzed for the method of determination of Cd₁₋xZnxTe composition x from measurements of the luminescence band peak position, emission being caused by annihilation of bound exciton - shallow ...
  • An arithmetic logic unit of a computer based on single electron transport system 
    Biswas, A.K.; Sarkar, S.K. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    A simple two-way switching can be modified utilizing optical switching, electron-wave modulation and single-electron transport. In this work an arithmetic-logic unit is designed by employing single-electron Binary Decision ...
  • Approximation of electro-optical characteristics of ChLC at transitions from the homeotropic texture 
    Rybalochka, A.; Chumachkova, M.; Sorokin, V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    In this paper a method for an approximation of electro-optical characteristics of a cholesteric liquid crystal (ChLC) that describe behavior of a cholesteric material at transitions from the field induced homeotropic texture ...
  • Atomic defects and physical-chemical properties of PbTe-InTe solid solutions 
    Freik, D.M.; Boychuk, V.I.; Mezhylovsjka, L.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    Crystal-quasichemical equations of probable mechanisms inherent to formation of solid solutions based on lead telluride of the n-type in PbTe-InTe system are offered. Shown is the possibility to satisfactorily explain ...
  • Avalanche multiplication of charge carriers in nanostructured porous silicon 
    Timokhov, D.F.; Timokhov, F.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    The phenomenon of avalanche multiplication of charge carriers in Al/PS-(c-Si) sandwich-structures based on nanostructured porous silicon (PS) is studied. Experimentally received dependences of ionization rates on intensity ...
  • Capture coefficients of free excitons by shallow acceptors and donors in gallium arsenide 
    Glinchuk, K.D.; Litovchenko, N.M.; Strilchuk, O.N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    An analysis of the 4.2 K exciton luminescence spectra of semi-insulating GaAs crystals with different concentrations of shallow acceptors (С) and donors (Si) is given. As a result, the 4.2 K capture coefficients of free ...
  • Change of carrier spectrum in layer semiconductors caused by strong electromagnetic wave field 
    Lukiyanets, B.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    Spectrum of carriers in layer semiconductors under action of strong electromagnetic field is analyzed. It is shown that obtained modification of the spectrum qualitatively differs from modification in analogous problem in ...
  • Changes of anisotropy of dilatative and optical properties of DGN crystal at ferroelectric phase transition 
    Andriyevsky, B.V.; Romanyuk, M.O.; Dumka, Yu.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    Temperature dependences of the linear dimension L(T) and the optical path difference D(T) of the ferroelectric diglycine nitrate crystals, (NH₂CH₂COOH)₂ HNO₃, have been measured for three principal directions of optical ...
  • Characteristics of confined exciton states in silicon quantum wires 
    Korbutyak, D.V.; Kryuchenko, Yu.V.; Kupchak, I.M.; Sachenko, A.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    We have studied theoretically the combined effect of quantum confinement and "dielectric enhancement" on the characteristics of the exciton ground state in quasi-1D silicon nanowires. Consideration has been made within ...
  • Characterization of CdTe+Mn crystals depending on doping procedure 
    Nikoniuk, E.S.; Zakharuk, Z.I.; Rarenko, I.M.; Kuchma, M.I.; Yurijchuk, I.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    Electrophysical properties of CdTe+Mn crystals grown by three different doping scheme of manganese introduction were studied. It was found that the properties of the CdTe crystals doped with Mn strongly depend on both the ...
  • Charge carrier generation in photosensitive amorphous molecular semiconductors 
    Zabolotny, M.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    Thermalization process in photosensitive amorphous molecular semiconductors are theoretically considered from the standpoint of their parameters, namely: thermalization time, thermalization length. The heat electron formed ...
  • Chemical bonding and optical bowing in III-nitrides solid solutions 
    Voznyy, O.V.; Deibuk, V.G. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    Chemical bonding and electronic properties of III-nitrides solid solutions are studied using a model empirical pseudopotential method in modified virtual crystal approximation taking into account positional and compositional ...
  • Classification of microdefects in semiconducting silicon 
    Talanin, V.I.; Talanin, I.E. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    On the basis of experimental analysis (preferential etching, transmission electron microscopy) of the dislocation-free silicon single crystals grown by floating-zone method (FZ-Si) and Czochralski method (Cz-Si), a ...
  • Design and testing of iodine cells for metrological laser application 
    Negriyko, A.M.; Boyko, O.V.; Kachalova, N.M.; Khodakovskiy, V.M.; Klochko, O.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    The design and performance of iodine vapor cells for frequency stabilized laser applications are presented. The traditional design of iodine vapor cell and special development of cell for fluorescence applications are ...
  • Destabilizing factors in operation of short-cavity He-Ne laser 
    Kononchuk, G.L.; Stukalenko, V.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    The influence of longitudinal manetic field (MF) on a position of polarization planes (PPs) of the main modes (λ = 0.63 mm) in dependency on the generation frequency and off-axis mode presence was investigated in this work. ...
  • Detection and metrology of optical vortex helical wave fronts 
    Bogatiryova, G.V.; Soskin, M.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    Spatial structure of optical vortex helical wave fronts is for the first time directly tested using various interference arrangements and precise measuring techniques. Experimental data are compared with simulation results. ...

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