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Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics, 2003, том 6 за датою випуску

Репозиторій DSpace/Manakin

Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics, 2003, том 6 за датою випуску

Сортувати за: Порядок: Результатів:

  • About manifestation of the piezojunction effect in diode temperature sensors 
    Borblik, V.L.; Shwarts, Yu.M.; Venger, E.F. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    An analytical theory of piezojunction effect has developed in application to silicon diode temperature n+-p type sensors, which for the first time takes into account three-subbands structure of the valence band of silicon. ...
  • Charge carrier generation in photosensitive amorphous molecular semiconductors 
    Zabolotny, M.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    Thermalization process in photosensitive amorphous molecular semiconductors are theoretically considered from the standpoint of their parameters, namely: thermalization time, thermalization length. The heat electron formed ...
  • Study of DNA interaction with carbon nanotubes 
    Dovbeshko, G.I.; Repnytska, O.P.; Obraztsova, E.D.; Shtogun, Ya.V.; Andreev, E.O. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    Structural characterisation of two different forms of carbon - graphite and single-walled carbon nanotubes (SWCNT) has been done with Raman and FTIR spectroscopy. Interaction of nucleic acids with graphite powder and SWCNT ...
  • Characterization of CdTe+Mn crystals depending on doping procedure 
    Nikoniuk, E.S.; Zakharuk, Z.I.; Rarenko, I.M.; Kuchma, M.I.; Yurijchuk, I.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    Electrophysical properties of CdTe+Mn crystals grown by three different doping scheme of manganese introduction were studied. It was found that the properties of the CdTe crystals doped with Mn strongly depend on both the ...
  • Thermodonor activation energy and mechanisms of tensoeffects in transmutation-doped y-irradiated silicon 
    Dotsenko, Yu.P.; Ermakov, V.M.; Gorin, A.E.; Khivrych, V.I.; Kolomoets, V.V.; Machulin, V.F.; Panasjuk, L.I.; Prokopenko, I.V.; Sus', B.B.; Venger, E.F. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    Activation energy of high temperature technological thermodonors (TD) has been determined in transmutation-doped n-Si(P) using the data analysis of the Hall-effect temperature dependence. Physical mechanisms of tensoeffects ...
  • Chemical bonding and optical bowing in III-nitrides solid solutions 
    Voznyy, O.V.; Deibuk, V.G. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    Chemical bonding and electronic properties of III-nitrides solid solutions are studied using a model empirical pseudopotential method in modified virtual crystal approximation taking into account positional and compositional ...
  • Analysis of luminescence method applicability for determination of Cd₁₋xZnxTe composition 
    Glinchuk, K.D.; Litovchenko, N.M.; Strilchuk, O.N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    Physical fundamentals are analyzed for the method of determination of Cd₁₋xZnxTe composition x from measurements of the luminescence band peak position, emission being caused by annihilation of bound exciton - shallow ...
  • Investigation of some mechanisms for formation of exciton absorption bands in layered semiconductor n-InSe and p-GaSe crystals 
    Zhirko, Yu.I.; Zharkov, I.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    We show that processes of creation, radiation and decay of the ground (n = 1) and excited exciton states in layered n-InSe and p-GaSe crystals involve direct (photon -> exciton -> photon, at k = 0), as well as indirect ...
  • Ion induced field effect in silicon in nematic liquid crystal cell 
    Kucheev, S.I.; Gritsenko, M.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    An influence of ion charge on surface conductivity of silicon in In₂O₃/5CB/monocrystal silicon/Al structure, in which a specific resistance of silicon is much less than a specific resistance of liquid crystal layer, was ...
  • Effects of interband phototunneling and filling the bands in electroreflectance spectra of germanium 
    Gentsar, P.A.; Matveeva, L.A.; Kudryavtsev, A.A.; Venger, E.F. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    Electroreflectance spectra of chemically etched (110) surface of intrinsic germanium are measured in the range of E₁, E₁ + Δ₁ transitions for ||[100] and ||[10] directions of the polarization vector. Separated are isotropic ...
  • Energy levels of rare-earth ions in crystal lattice sites of cubic symmetry 
    Ammerlaan, C.A.J. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    Numerical calculations are presented for the energy levels of the rare-earth ion Er³⁺ in a crystalline field of cubic symmetry. A distinction is made between the five different point groups within the system of cubic ...
  • Investigations of physical mechanisms of metal-insulator transition in highly strained n-Si and n-Ge crystals 
    Budzulyak, S.I.; Ermakov, V.M.; Kyjak, B.R.; Kolomoets, V.V.; Machulin, V.F.; Novoselets, M.K.; Panasjuk, L.I.; Sus', B.B.; Venger, E.F. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    Analysis of experimental results on transport phenomena is presented for highly uniaxially strained silicon and germanium crystals heavily doped by shallow donors. Possible mechanisms of the strain induced metal-insulator ...
  • Determination of surface parameters of solids by methods of X-ray total external reflection 
    Balovsyak, S.V.; Fodchuk, I.M.; Lytvyn, P.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    The series of GaAs and SiO₂ samples with the specially prepared one- and two-dimensional surface reliefs have been investigated by the methods of integral and differential curve total external reflection of X-rays. The ...
  • Magnetic point contact in ferromagnetic semiconductor (Ga,Mn)As 
    Figielski, T.; Wosinski, T.; Morawski, A.; Pelya, O.; Makosa, A.; Dobrowolski, W.; Wrobel, J.; Sadowski, J.; Jagielski, J.; Ratajczak, J. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    We show that narrow constrictions, a few hundred nanometers wide, in ferromagnetic semiconductor (Ga,Mn)As layer exhibit large spin-related magnetoresistance. Moreover, we demonstrate that application of oxygen-ions ...
  • High-resistance low-doped GaAs and AlGaAs layers obtained by LPE 
    Krukovsky, S.I.; Zayachuk, D.M.; Rybak, O.V.; Mryhin, I.O. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    Influence of Yb and Al co-doping gallium melt during LPE growth of the GaAs epitaxial layers on their properties is investigated. It is shown that both morphology and electrophysical parameters of the films are changed ...
  • Electron emission modulation effects in micro-size structures 
    Hartnagel, H. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    A promising application of field-emission phenomena is microwave high-frequency oscillation generation. In this presentation, new effects at the field emission, as a perspective mechanism of high-frequency oscillation ...
  • Electrical activity of misfit dislocations in GaAs-based heterostructures 
    Wosinski, T. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    Electrical properties of lattice-mismatch induced defects in GaAs/InGaAs and GaAs/GaAsSb heterostructures have been studied by means of electron-beam induced current (EBIC) in a scanning electron microscope and deep-level ...
  • Investigation of the optical and acoustical phonon modes in Si₁₋xGex QD SLs 
    Dzhagan, V.N.; Krasil'nik, Z.F.; Lytvyn, P.M.; Novikov, A.V.; Valakh, M.Ya.; Yukhymchuk, V.O. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    Single- and multilayer structures with Si₁₋xGex nanoislands have been investigated using the Raman scattering technique. The values of the mechanical strain and composition were determined in the islands of the both ...
  • Investigation of superlattice structure parameters using quasi-forbidden reflections 
    Kladko, V.P.; Datsenko, L.I.; Korchovyi, A.A.; Machulin, V.F.; Lytvyn, P.M.; Shalimov, A.V.; Kuchuk, A.V.; Kogutyuk, P.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    We studied possibilities of a nondestructive X-ray technique for testing short-period strained GaAs-AlAs superlattices. An analysis of the quasi-forbidden 200 reflections may be used for determination of superlattice layer ...
  • The energy structure of free electrons for semiconductor in the field of cylindrical symmetry 
    Stakhira, J.M.; Stakhira, R.J. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    The energetic structure of semiconductor free electrons in the field of cylindrical symmetry whose radial part is a sum of two components, which depend on radial coordinate according to quadratic and biquadratic laws has ...

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