High-resistance low-doped GaAs and AlGaAs layers obtained by LPE

Домашня сторінка
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Фізико-технічні та математичні науки
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Відділення фізики і астрономії
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Semiconductor Physics Quantum Electronics & Optoelectronics
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Semiconductor Physics Quantum Electronics & Optoelectronics, 2003, том 6
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Semicond. Physics Quantum Electronics & Optoelectronics, 2003, № 1
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High-resistance low-doped GaAs and AlGaAs layers obtained by LPE

Krukovsky, S.I. ; Zayachuk, D.M. ; Rybak, O.V. ; Mryhin, I.O.

Інший ID: PACS: 73.61.Ey

URI: http://dspace.nbuv.gov.ua/handle/123456789/117942

Посилання: High-resistance low-doped GaAs and AlGaAs layers obtained by LPE / S.I. Krukovsky, D.M. Zayachuk, O.V. Rybak, I.O. Mryhin // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 1. — С. 55-57. — Бібліогр.: 9 назв. — англ.

Дата: 2003

Завантажень: 427

High-resistance low-doped GaAs and AlGaAs layers obtained by LPE

Анотація:

Influence of Yb and Al co-doping gallium melt during LPE growth of the GaAs epitaxial layers on their properties is investigated. It is shown that both morphology and electrophysical parameters of the films are changed under influence of the doping impurities applied. Obtained results are explained by simultaneous Yb gettering action with respect to oxygen and silicon in the solution-melt, and also by lowering the concentration of Si in the films due to Al entering into Ga sub-lattice.

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