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Electron emission modulation effects in micro-size structures
Репозиторій DSpace/Manakin
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- Фізико-технічні та математичні науки
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- Відділення фізики і астрономії
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- Semiconductor Physics Quantum Electronics & Optoelectronics
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- Semiconductor Physics Quantum Electronics & Optoelectronics, 2003, том 6
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- Semicond. Physics Quantum Electronics & Optoelectronics, 2003, № 1
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Electron emission modulation effects in micro-size structures
Інший ID:
PACS: 79.70.+q
Посилання:
Electron emission modulation effects in micro-size structures / H. Hartnagel // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 1. — С. 62-67. — Бібліогр.: 16 назв. — англ.
Підтримка:
This work was supported in part by the DLR (BMBF) in connection with German-Ukrainian projects (UKR 01/053) entitled "Electron Emission Properties of the DLC Films and C-Nanotubes" and in part by the "Deutsche Forschungsgemeinschafit (DFG)" in connecntion with a special research project (SFB 241) on innovative mechatronics.
Дата:
2003
Переглядів:
627
Завантажень:
274
Анотація:
A promising application of field-emission phenomena is microwave high-frequency oscillation generation. In this presentation, new effects at the field emission, as a perspective mechanism of high-frequency oscillation generation, has been investigated and analyzed. The mechanisms are connected with the generation of oscillations in field emission structures (i) based on the silicon or GaAs tips with ultrathin diamond-like carbon (DLC) films, (ii) III-V semiconductors (GaAs, GaN) and (iii) SiGe materials.
