Наукова електронна бібліотека
періодичних видань НАН України

Перегляд Відділення фізики і астрономії за автором "Lytvyn, O.S."

Репозиторій DSpace/Manakin

Перегляд Відділення фізики і астрономії за автором "Lytvyn, O.S."

Сортувати за: Порядок: Результатів:

  • Development of high-stable contact systems to gallium nitride microwave diodes 
    Belyaev, A.E.; Boltovets, N.S.; Ivanov, V.N.; Kapitanchuk, L.M.; Kladko, V.P.; Konakova, R.V.; Kudryk, Ya.Ya.; Kuchuk, A.V.; Lytvyn, O.S.; Milenin, V.V.; Sheremet, V.N.; Sveshnikov, Yu.N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    High-stable heat-resistant low-resistance contact systems with diffusion barriers involving quasi-amorphous TiBx layers are suggested and studied. We have performed the structural and morphological investigations along ...
  • Effect of microwave electromagnetic radiation on the structure, photoluminescence and electronic properties of nanocrystalline silicon films on silicon substrate 
    Kaganovich, E.B.; Kizyak, I.M.; Kirillova, S.I.; Konakova, R.V.; Lytvyn, O.S.; Lytvyn, P.M.; Manoilov, E.G.; Primachenko, V.E.; Prokopenko, I.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    We studied the effect of microwave electromagnetic radiation on silicon low-dimensional structures. The nanocrystalline silicon (nc-Si) films on p-Si substrate were formed with pulsed laser ablation. The surface morphology ...
  • Effect of pulse thermal treatments on the Ni(Ti)–n-21R(6H)-SiC contact parameters 
    Avdeev, S.P.; Agueev, O.A.; Konakova, R.V.; Kudryk, Ya.Ya.; Lytvyn, O.S.; Lytvyn, P.M.; Milenin, V.V.; Sechenov, D.A.; Svetlichny, A.M.; Soloviev, S.I.; Sudarshan, T.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    We present experimental investigations of the effect of rapid thermal treatment with incoherent IR radiation, as well as electric-spark and electron-beam treatments, on the electric parameters of Ni(Ti) n-21R(6H)-SiC ...
  • Evolution of structural and electrophysical parameters of Ni/SiC contacts at rapid thermal annealing 
    Litvinov, V.L.; Demakov, K.D.; Agueev, O.A.; Svetlichny, A.M.; Konakova, R.V.; Lytvyn, P.M.; Lytvyn, O.S.; Milenin, V.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)
    Using X-ray phase analysis, Auger electron spectroscopy and atomic force microscopy, we investigated structural-phase transformations in the Ni/n-21R-SiC system induced by rapid thermal annealing in a vacuum (pressure of ...
  • Mechanical scanning probe nanolithography: modeling and application 
    Lytvyn, P.M.; Lytvyn, O.S.; Dyachyns’ka, O.M.; Grytsenko, K.P.; Schrader, S.; Prokopenko, I.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2012)
    The paper presents a study on modeling the mechanical interaction between the tip of a scanning atomic force microscope (AFM) and surfaces of various types, which makes it possible to optimize parameters and modes for ...
  • Micro-Raman study of nanocomposite porous films with silver nanoparticles prepared using pulsed laser deposition 
    Strelchuk, V.V.; Kolomys, O.F.; Golichenko, B.O.; Boyko, M.I.; Kaganovich, E.B.; Krishchenko, I.M.; Kravchenko, S.O.; Lytvyn, O.S.; Manoilov, E.G.; Nasieka, Iu.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2015)
    Nanocomposite porous films with silver nanoparticle (Ag NP) arrays were prepared by the pulsed laser deposition from the back flux of erosion torch particles in argon atmosphere on the substrate placed at the target plane. ...
  • Modification of properties of the glass-Si₃N₄-Si-SiO₂ structure at laser treatment 
    Konakova, R.V.; Kladko, V.P.; Lytvyn, O.S.; Okhrimenko, O.B.; Konoplev, B.G.; Svetlichnyi, A.M.; Lissotschenko, V.N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2009)
    We studied the effect of laser treatment on the glass-Si₃N₄-Si-SiO₂ structures. It is shown that laser treatment causes appearance of an additional band in their transmission spectra as well as smearing of grain structure ...
  • New technological possibilities to prepare InP epitaxial layers, as well as ohmic and barrier contacts to them, and the properties of microwave diodes made on their basis 
    Arsentyev, I.N.; Bobyl, A.V.; Tarasov, I.S.; Shishkov, M.V.; Boltovets, N.S.; Ivanov, V.N.; Kamalov, A.B.; Konakova, R.V.; Kudryk, Ya.Ya.; Lytvyn, O.S.; Lytvyn, P.M.; Markovskiy, E.P.; Milenin, V.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    A novel technological approach to fabrication of n-InP autoepitaxial films LPE-grown on porous n⁺-InP substrates, as well as ohmic and barrier contacts to them using (quasi)amorphous TiBx interstitial phases, is proposed. ...
  • Ohmic contacts to Hall sensors based on n-InSb-GaAs(i) heterostructures 
    Boltovets, N.S.; Konakova, R.V.; Kudryk, Ya.Ya.; Milenin, V.V.; Mitin, V.F.; Mitin, E.V.; Lytvyn, O.S.; Kapitanchuk, L.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2006)
    We consider ohmic contacts to the n-InSb epitaxial layers grown on a semi-insulating GaAs substrate. The ohmic contacts are formed through titanium metallization with subsequent gilding. Using the structural (AFM and XRD) ...
  • Optical and acoustical phonon modes in superlattices with SiGe QDs 
    Yukhymchuk, V.O.; Dzhagan, V.M.; Klad’ko, V.P.; Lytvyn, O.S.; Machulin, V.F.; Valakh, M.Ya.; Yaremko, A.M.; Milekhin, A.G.; Krasil’nik, Z.F.; Novikov, A.V.; Mestres, N.; Pascual, J. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    Multilayers with SiGe nanoislands grown in a broad temperature range (300-600 °C) are studied using Raman spectroscopy, HRXRD and AFM. It is shown that the islands are fully strained when obtained at 300 °C and gradually ...
  • Optical biosensors based on the surface plasmon resonance phenomenon: optimization of the metal layer parameters 
    Snopok, B.A.; Kostyukevich, K.V.; Lysenko, S.I.; Lytvyn, P.M.; Lytvyn, O.S.; Mamykin, S.V.; Zynyo, S.A.; Shepelyavyj, P.E.; Kostyukevich, S.A.; Shirshov, Yu.M.; Venger, E.F. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    Application of the evanescent wave phenomena (e.g. surface plasmon resonance) in the chemical and biochemical sensors provides both optimal conditions for registration of specific interactions and high sensitivity. At the ...
  • Ordering of lateral nonuniformity of TiBx film and transition layer in the TiBx-GaAs system 
    Konakova, R.V.; Milenin, V.V.; Voitsikhovskyi, D.I.; Kamalov, A.B.; Kolyadina, E.Yu.; Lytvyn, P.M.; Lytvyn, O.S.; Matveeva, L.A.; Prokopenko, I.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    For TiBx film ~50 nm thick formed by magnetron sputtering from a pressed target onto the <100> GaAs substrate we experimentally revealed lateral nonuniformity ordering at microwave irradiation (frequency of 2.45 GHz, ...
  • Plasmon-enhanced fluorometry based on gold nanostructure arrays. Method and device 
    Chegel, V.I.; Lytvyn, V.K.; Lopatynskyi, A.M.; Shepeliavyi, P.E.; Lytvyn, O.S.; Goltvyanskyi, Yu.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2015)
    In this work, we describe a method of surface-enhanced fluorometry, based on the phenomenon of localized surface plasmon resonance in unordered gold nanostructure arrays. The theoretical approach for the model system “gold ...
  • Recrystallization processes in screen-printed CdS films 
    Klad’ko, V.P.; Lytvyn, O.S.; Lytvyn, P.M.; Osipenok, N.M.; Pekar, G.S.; Prokopenko, I.V.; Singaevsky, A.F.; Korchevoy, A.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)
    Kinetics of recrystallization in screen-printed polycrystalline CdS films has been investigated by X-ray structure analysis and optical microscopy. The relation between the crystallite size, crystallite orientation and the ...
  • SiC Schottky-barrier diodes formed with TiBx and ZrBx amorphous layers 
    Boltovets, N.S.; Ivanov, V.N.; Konakova, R.V.; Kudryk, Ya.Ya.; Milenin, V.V.; Lytvyn, O.S.; Lytvyn, P.M.; Vlaskina, S.I.; Agueev, O.A.; Svetlichny, A.I.; Soloviev, S.I.; Sudarshan, T.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    Electrical and structural properties of Schottky-barrier diodes formed with TiBx and ZrBx amorphous layers on n-6H-, 15R- and 4H-SiC (with epi-layer) were studied. High thermal stability of ideality factors and barrier ...
  • Simple method for SiC nanowires fabrication 
    Kiselov, V.S.; Lytvyn, O.S.; Yukhymchuk, V.O.; Belyaev, A.E. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    In this work, we introduce a simple and convenient approach for growing SiC nanowires (SiCNWs) directly on carbon source from graphite. The commercial SiO powder and the cheap common graphite were used as the source ...
  • Structural and composition irregularities in GaAs:Si/GaAs films grown by liquid-phase epitaxy 
    Kladko, V.P.; Datsenko, L.I.; Maksimenko, Z.V.; Lytvyn, O.S.; Prokopenko, I.V.; Zytkiewicz, Z. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    Stoichiometry parameters as well as the microdefects ones for GaAs:Si/GaAs thin films grown by liquid-phase epitaxy were investigated by means of method of X-ray integrated reflectivity energy dependencies analysis for ...
  • Structural investigations of annealed ZnS:Cu, Ga film phosphors 
    Lytvyn, O.S.; Khomchenko, V.S.; Kryshtab, T.G.; Lytvyn, P.M.; Mazin, M.O.; Prokopenko, I.V.; Rodionov, V.Ye.; Tzyrkunov, Yu.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    X-ray and atomic force microscopy techniques were used for investigations of crystalline structure and nano-morphology of ZnS:Cu thin films. The films were deposited by electron beam evaporation on substrates of various ...
  • Structural properties of nanocomposite SiO₂(Si) films obtained by ion-plasma sputtering and thermal annealing 
    Bratus, O.L.; Evtukh, A.A.; Lytvyn, O.S.; Voitovych, M.V.; Yukhymchuk, V.О. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    The nanocomposite SiO₂(Si) films containing Si nanoclusters inside insulating SiO₂matrix are promising for many nanoelectronics applications. The ion-plasma sputtering of Si in O₂ containing gas mixture and following thermal ...
  • The features of temperature dependence of contact resistivity of Au-Ti-Pd₂Si-p⁺ ₋Si ohmic contacts 
    Belyaev, A.E.; Boltovets, N.S.; Kapitanchuk, L.M.; Konakova, R.V.; Kladko, V.P.; Kudryk, Ya.Ya.; Kuchuk, A.V.; Lytvyn, O.S.; Milenin, V.V.; Korostinskaya, T.V.; Ataubaeva, A.B.; Nevolin, P.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    We consider the features of formation of Au-Ti-Pd ohmic contacts to p⁺₋Si. Metallization was made by vacuum thermal sputtering of Pd, Ti and Au films onto the Si substrate heated up to 330 °С. It is shown that the contact ...

Пошук


Розширений пошук

Перегляд

Мій обліковий запис