Dielectric response of disordered ferroelectrics with embedded charged clusters

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Фізико-технічні та математичні науки
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Відділення фізики і астрономії
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Semiconductor Physics Quantum Electronics & Optoelectronics
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Semiconductor Physics Quantum Electronics & Optoelectronics, 2003, том 6
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Semicond. Physics Quantum Electronics & Optoelectronics, 2003, № 2
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dc.contributor.author	Morozovska, A.N.
dc.contributor.author	Eliseev, E.A.
dc.contributor.author	Obukhovsky, V.V.
dc.date.accessioned	2017-05-28T05:46:56Z
dc.date.available	2017-05-28T05:46:56Z
dc.date.issued	2003
dc.identifier.citation	Dielectric response of disordered ferroelectrics with embedded charged clusters / A.N. Morozovska, E.A. Eliseev, V.V. Obukhovsky // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 2. — С. 238-248. — Бібліогр.: 21 назв. — англ.	uk_UA
dc.identifier.issn	1560-8034
dc.identifier.other	PACS: 77.80.-e
dc.identifier.uri	http://dspace.nbuv.gov.ua/handle/123456789/118003
dc.description.abstract	The model of static charged clusters, which adequately describes the dielectric hysteresis and permittivity of disordered ferroelectrics with non-isovalent impurities, has been proposed. The main result of paper is modified Landau-Ginzburg-Devonshire equation can be applied to the bulk ferroelectric materials with improper conductivity and movable charge fluctuations near the impurity centers.	uk_UA
dc.description.sponsorship	The authors are greatly indebted to Prof. N.V. Morozovsky for frutfull discussions of the model and useful remarks to the manuscript. The work is supported by grant INTAS-01-0173.	uk_UA
dc.language.iso	en	uk_UA
dc.publisher	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України	uk_UA
dc.relation.ispartof	Semiconductor Physics Quantum Electronics & Optoelectronics
dc.title	Dielectric response of disordered ferroelectrics with embedded charged clusters	uk_UA
dc.type	Article	uk_UA
dc.status	published earlier	uk_UA