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Перегляд Semicond. Physics Quantum Electronics & Optoelectronics, 1999, № 1 за датою випуску

Репозиторій DSpace/Manakin

Перегляд Semicond. Physics Quantum Electronics & Optoelectronics, 1999, № 1 за датою випуску

Сортувати за: Порядок: Результатів:

  • Vitusevich, S. A.; Forster, A.; Belyaev, A. E.; Glavin, B. A.; Indlekofer, K. M.; Luth, H.; Konakova, R. V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    A new type of an optically controlled tunnelling process in a specially designed Esaki diode is investigated. The additional peak appears due to tunnelling of 2D electrons accumulated at ground state of delta doped layers ...
  • Demidenko, A. A.; Kochelap, V. A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    We have investigated acoustic waves in a heterostructure with a layer embedded into a semiconductor providing acoustic waves localization near the layer and electron confinement inside the layer. For layer thicknesses ...
  • Grigorchuk, N. I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    Within the framework of the dipole approximation the line-shape of light absorption for exciton transitions between broad bands in one-, two- and three-dimensional organic semiconductor structures are calculated. Exciton ...
  • Malysh, N. I.; Kunets, V. P.; Valiukh, S. I.; Kunets, Vas. P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    The absorption saturation of CdS single crystals was investigated in the Urbach region. It was shown that the threshold behaviour of the absorption coefficient is caused by recharging of the shallow acceptors, and the ...
  • Mazur, Yu. I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    New results on infrared photoluminescence and photoluminescence excitation spectroscopy around the fundamental energy gap in Hg₁₋x₋yCdxMnyTe single crystal are presented. A very strong electron-phonon coupling influencing ...
  • Tomashik, Z.F.; Danylenko, S.G.; Tomashik, V.N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    Dissolution of InAs in HNO₃-HBr-H₂O solutions is studied. The surface of equal etching rates is constructed, and the limiting stages of the dissolution process are determined. Depending on the [HNO₃]/[HBr] ratio, InAs ...
  • Ishchenko, S.; Vorona, I.; Okulov, S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    γ- and x-irradiated tooth enamel has been studied by EPR and ENDOR. Radiation-induced EPR spectrum of tooth enamel was found to be a superposition of signals with dominant contribution determined by CO₂- radicals. Two types ...
  • Usenko, A.Y.; Carr, W.N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    A purpose of the paper is to give a review of recent development (1998-1999) in microelectromechanical (MEMS) devices formed on silicon-on-insulator (SOI) substrates. Advantages of using SOI are summarised. Problems of ...
  • Belyaev, A.A.; Belyaev, A.E.; Konakova, R.V.; Vitusevich, S.A.; Milenin, V.V.; Soloviev, E.A.; Kravchenko, L.N.; Figielski, T.; Wosinski, T.; Makosa, A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    The total dose effects of ⁶⁰Co γ-radiation on the electrical properties of double-barrier Resonant Tunneling Diodes have been studied. The devices manifest enhanced radiation hardness and conserve their operating parameters ...
  • Sizov, F.F.; Reva, V.P.; Derkach, Yu.P.; Kononenko, Yu.G.; Golenkov, A.G.; Korinets, S.V.; Darchuk, S.D.; Filenko, D.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    Silicon readout devices with input direct injection and buffered direct injection circuits and charge-coupled devices (CCD) multiplexers to be used with n⁺-p- or p⁺-n-photovoltaic (PV) multielement arrays were designed, ...
  • Stronski, A.V.; Vlcek, M.; Shepeliavyi, P.E.; Sklenar, A.; Kostyukevich, S.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    The present paper is concerned with investigations of image formation properties of As₄₀S₂₀Se₄₀ thin layers. Spectral dependence of the refraction index, n, of variously treated (virgin, exposed, annealed) samples was ...
  • Mitin, V.F. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    The latest achievements in the field of development of resistance thermometers based on the germanium films on gallium arsenide are presented and summarized. Basic models of Ge film thermometers, which cover the temperature ...
  • Korsunskaya, N. E.; Markevich, I. V.; Dzhumaev, B. R.; Borkovskaya, L. V.; Sheinkman, M. K. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    Electron-enhanced reactions in II-VI compounds are shown to be caused by the presence of some mobile defects which diffusion is not enhanced under excitation. At the same time, electron-enhanced diffusion can be imitated ...
  • Dotsenko, Yu. P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    The paper represents a review of research data upon changing electrophysical properties of n-Si and n-Ge when radiation defects arise under action of different γ-irradiation doses. Analyzed are consequences of arising deep ...
  • Datsenko, L.I.; Auleytner, J.; Misiuk, A.; Klad'ko, V.P.; Machulin, V.F.; Bak-Misiuk, J.; Zymierska, D.; Antonova, I.V.; Melnyk, V.M.; Popov, V.P.; Czosnyka, T.; Choinski, J. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    Structure perfection of the silicon crystals grown by the Czochralski and floating zone methods after implantation with oxygen or neon fast iones followed by annealing at the temperatures T ~ 1050-1150 ⁰0C, when large SiOx ...
  • Bogoboyashchiy, V.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    Hall effect, resistivity and p-n-junction characteristics were investigated on high pure and perfect p-type Hg₁₋xCdxTe crystals (x ~ 0.2) versus temperature, doping, and a way of heat treatment. It was shown, that activation ...
  • Mamikonova, V.M.; Kasimov, F.D.; Kemerchev, G.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    The possibility of forming polycrystalline silicon films by pulse thermal annealing has been investigated using measurement of a photo-e.m.f., dark and light voltage-current characteristics. Investigated samples were ...
  • Avramenko, S.F.; Kiselev, V.S.; Valakh, M.Ya.; Visotski, V.G. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    Monocrystalline SiC ingots were grown by a modified Lely method using 6H-SiC seed crystals with (0001) base plane. The crystal growth was carried out in the temperature range 2200-2500 ⁰C at Ar pressure from 2 to 40 mbar. ...
  • Venger, Ye.F.; Milenin, V.V.; Ermolovich, I.B.; Konakova, R.V.; Voitsikhovskiy, D.I.; Hotovy, I.; Ivanov, V. N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    For contacts prepared from titanium borides by and nitrides ion-plasma sputtering onto gallium arsenide both formation mechanisms and thermal stability were investigated. We used a combination of structural, secondary-emission, ...
  • Boyko, O.V.; Negriyko, A.M.; Yatsenko, L.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    The results of experimental investigations of He-Ne/¹²⁷I₂ lasers (l = 633 nm) pumped by transverse rf-discharge are presented. Due to the low level of amplitude fluctuations, the frequency stability of such lasers reaches ...

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