ЗМІСТ

Vitusevich S.A., Forster A., Belyaev A.E., Glavin B.A., Indlekofer K.M., Luth H., Konakova R.V.
Optically controlled 2D tunnelling in GaAs delta-doped p-n junction

Demidenko A.A., Kochelap V.A.
Amplification of localized acoustic waves by the electron drift in a quantum well

Grigorchuk N.I.
Light absorption by d-dimensional organic semiconductors under exciton transitions between broad bands

Malysh N.I., Kunets, V.P., Valiukh S.I., Kunets Vas.P.
Saturation of optical absorption in CdS single crystals

Mazur Yu.I.
Photoluminescence excitation spectroscopy in narrow - gap Hg_1-x_-yCd xMnyTe

Korsunskaya N.E., Markevich I.V., Dzhumaev B.R., Borkovskaya L.V., Sheinkman M.K.
Electron-enhanced reactions responsible for photoluminescence spectrum change in II-VI compounds

Dotsenko Yu.P.
Electro-physical properties of γ-exposed crystals of silicon and germanium

Datsenko L.I., Auleytner J., Misiuk A., Klad'ko V.P., Machulin V.F., Bak-Misiuk J., Zymierska D., Antonova I.V., Melnyk V.M., Popov V.P., Czosnyka T., Choinski J.
Structure perfection variations of Si crystals grown by Czochralski or floating zone methods after implantation of oxygen or neon atoms followed by annealing

Bogoboyashchiy V.V.
Effect of annealing on activation of native acceptors in narrow-gap p-HgCdTe crystals

Mamikonova V.M., Kasimov F.D., Kemerchev G.P.
Influence of pulse thermal annealing on photoelectrical properties of locally grown polycrystalline silicon films

Avramenko S.F., Kiselev V.S., Valakh M.Ya., Visotski V.G.
Investigation of structural perfection of SiC ingots grown by a sublimation method

Tomashik Z.F., Danylenko S.G., Tomashik V.N.
Dissolution of indium arsenide in nitric solutions of the hydrobromic acid

Ishchenko S., Vorona I., Okulov S.
ENDOR study of irradiated tooth enamel

Usenko A.Y., Carr W.N.
Silicon-on-insulator technology for microelectromechanical applications

Belyaev A.A., Belyaev A.E., Konakova R.V., Vitusevich S.A., Milenin V.V., Soloviev E.A., Kravchenko L.N., Figielski T., Wosinski T., Makosa A.
Radiation hardness of AlAs/GaAs-based resonant tunneling diodes

Sizov F.F., Reva V.P., Derkach Yu.P., Kononenko Yu.G., Golenkov A.G., Korinets S.V., Darchuk S.D., Filenko D.A.
IR sensor readout devices with source input circuits

Stronski A.V., Vlcek M., Shepeliavyi P.E., Sklenar A., Kostyukevich S.A.
Image formation properties of As₄₀S₂₀Se₄₀ thin layers in application for gratings fabrication

Mitin V.F.
Resistance thermometers based on the germanium films

Venger Ye.F., Milenin V.V., Ermolovich I.B., Konakova R.V., Voitsikhovskiy D.I., Hotovy I., Ivanov V. N.
Heat tolerance of titanium boride and titanium nitride contacts to gallium arsenide

Boyko O.V., Negriyko A.M., Yatsenko L.P.
Iodine-stabilized He-Ne laser pumped by transverse rf-discharge

Zabello E., Syaber V., Khizhnyak A.
Influence of temporal parameters of laser irradiation on emission spectra of the evaporated material

Khizhnyak A., Galich G., Lopiitchouk M.
Characteristics of thermal lens induced in active rod of cw Nd:YAG laser

Serdega B.K., Venger Ye.F., Nikitenko Ye.V.
Thermoelasticity in Ge due to nonuniform distribution of doping impurity studied by light polarization modulation technique

Klad'ko V.P., Grigoriev D.O., Datsenko L.I., Machulin V.F., Prokopenko I.V.
Influence of absorption level on mechanisms of Braggdiffracted x-ray beam formation in real silicon crystals