Optically controlled 2D tunnelling in GaAs delta-doped p-n junction

Домашня сторінка
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Фізико-технічні та математичні науки
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Відділення фізики і астрономії
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Semiconductor Physics Quantum Electronics & Optoelectronics
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Semiconductor Physics Quantum Electronics & Optoelectronics, 1999, том 2
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Semicond. Physics Quantum Electronics & Optoelectronics, 1999, № 1
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Optically controlled 2D tunnelling in GaAs delta-doped p-n junction

Vitusevich, S. A. ; Forster, A. ; Belyaev, A. E. ; Glavin, B. A. ; Indlekofer, K. M. ; Luth, H. ; Konakova, R. V.

Інший ID: PACS: 85.30.K, 68.55.L

URI: http://dspace.nbuv.gov.ua/handle/123456789/117856

Посилання: Optically controlled 2D tunnelling in GaAs delta-doped p-n junction / S.A. Vitusevich, A. Forster, A.E. Belyaev, B.A. Glavin, K.M. Indlekofer, H. Luth, R.V. Konakova // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 1. — С. 7-10. — Бібліогр.: 11 назв. — англ.

Підтримка: S. A. V. would like to acknowledge the Alexander von Humbold Foundation for financial support. A.E.B. and R.V.K. were supported by STCU under Grant No. 464.

Дата: 1999

Завантажень: 391

Optically controlled 2D tunnelling in GaAs delta-doped p-n junction

Анотація:

A new type of an optically controlled tunnelling process in a specially designed Esaki diode is investigated. The additional peak appears due to tunnelling of 2D electrons accumulated at ground state of delta doped layers embedded nearby the p-n junction into the valence band of the p⁺-contact. It is found that the voltage position of an additional resonant peak shifts to lower bias voltage with increasing both incident light intensity and temperature. Our experimental data and theoretical simulations show that this shift is a result of an electrical field redistribution in the region of the p-n junction caused by non-equilibrium carriers generated with optic or thermal excitation.

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