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Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics, 2003, том 6 за датою випуску

Репозиторій DSpace/Manakin

Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics, 2003, том 6 за датою випуску

Сортувати за: Порядок: Результатів:

  • Detection and metrology of optical vortex helical wave fronts 
    Bogatiryova, G.V.; Soskin, M.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    Spatial structure of optical vortex helical wave fronts is for the first time directly tested using various interference arrangements and precise measuring techniques. Experimental data are compared with simulation results. ...
  • Change of carrier spectrum in layer semiconductors caused by strong electromagnetic wave field 
    Lukiyanets, B.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    Spectrum of carriers in layer semiconductors under action of strong electromagnetic field is analyzed. It is shown that obtained modification of the spectrum qualitatively differs from modification in analogous problem in ...
  • Electric properties of metal-organic lyotropic liquid crystals 
    Klimusheva, G.V.; Koval'chuk, A.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    The electric properties of pure and dye-doped potassium caproate, which in a 1:1 water solution forms at room temperature ionic lyotropic liquid crystals (ILLC) of smectic A type [1], were investigated. It carried out the ...
  • One-dimensional warm electron transport in GaN quantum well wires at low temperatures 
    Sarkar, S.K. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    One-dimensional warm electron coefficient (β) and Ohmic mobility μ₀ in a square quantum well wire of GaN are studied for lattice temperatures in the range of 4-10 K, which are important from the application point of view. ...
  • Enhancement of CdSSe QD exciton luminescence efficiency by hydrogen RF plasma treatment 
    Kunets, V.P.; Kulish, N.R.; Strelchuk, V.V.; Nazarov, A.N.; Tkachenko, A.S.; Lysenko, V.S.; Lisitsa, M.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    We report an enhancement of exciton luminescence in CdSxSe₁₋x QD embedded into borosilicate glass matrix and then treated by the low-temperature hydrogen RF plasma. Results clearly confirm the essential crushing of the ...
  • Personalia Vadim Evgenovich Lashkaryov 
    Автор відсутній (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
  • Characteristics of confined exciton states in silicon quantum wires 
    Korbutyak, D.V.; Kryuchenko, Yu.V.; Kupchak, I.M.; Sachenko, A.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    We have studied theoretically the combined effect of quantum confinement and "dielectric enhancement" on the characteristics of the exciton ground state in quasi-1D silicon nanowires. Consideration has been made within ...
  • Topography of Si epitaxial monolayers obtained on Si (001) substrate by computer simulations 
    Pyziak, L.; Obermayr, W.; Zembrowska, K.; Kuzma, M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    Fractal analysis was used for the description of the geometry of the clusters formed within the Monte Carlo simulation of the first monolayer growth on Si substrate. Pulse laser deposition method was assumed for the epitaxy. ...
  • Effect of the sapphire substrate on spectral emission features of LEDs based on InGaN/AlGaN/GaN heterostructures 
    Bletskan, D.I.; Lukyanchuk, O.R.; Bletskan, O.D. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    Luminescence spectra of blue and green LEDs based on InxGa₁₋xN/AlyGa₁₋yN/GaN heterostructures with many quantum wells in the current range 0.1 to 10 mA have been studied besides the main electroluminescence band. In the ...
  • Photovoltage and photocurrent spectroscopy of luminescent porous silicon 
    Vakulenko, O.V.; Kondratenko, S.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    Measurements of photoconductivity, photovoltage and photoluminescence spectra of porous silicon/c-Si structures are carried out. It is shown that the shape of the photoconductivity and photovoltage spectra is caused mainly ...
  • High efficient solar cells and modules based on diamond-like carbon film - multicrystalline Si structures 
    Klyui, N.I.; Korneta, O.B.; Kostylyov, V.P.; Litovchenko, V.G.; Makarov, A.V.; Dikusha, V.N.; Neselevska, L.V.; Gorbulik, V.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    In the work the results of investigations of developed and produced solar cells (SC) and modules (SM) characteristics are presented. It has been shown that due to application of hydrogen plasma treatment and deposition of ...
  • Effect of microwave treatment on the parameters of Au-TiBx-GaAs(SiC 6H) surface-barrier structures 
    Abdizhaliev, S.K.; Ismailov, K.A.; Kamalov, A.B.; Kudrik, Ya.Ya. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    We studied I-V curves of Au-TiBx-n-n⁺-GaAs and Au-TiBx-n-SiC 6Н surface-barrier structures. The structures were exposed to microwave treatments (frequency of 2.45 GHZ, irradiance of 1.5 W/cm², duration of 0-500 s). For ...
  • On thermal emission of small-sized radiator 
    Salkov, E.A.; Svechnikov, G.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    Principle feasibility has been considered for a distant identification of a small-sized thermal radiator by means of detecting its thermal radiation. A single small-size radiator is phenomenologically treated within the ...
  • Polarization and angular peculiarities of IR emission of thin film semiconductor structures 
    Kollyukh, O.G.; Liptuga, A.I.; Morozhenko, V.O.; Pipa, V.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    In this paper thermal radiation from plane-parallel semiconductor layers was investigated. Shown is that spectra of thermal radiation from structures has an oscillating character caused by multi-beam interference. It was ...
  • Temperature dependence of luminescence pecularities in oxygen doped ZnTe films 
    Malushin, N.V.; Skobeeva, V.M.; Smyntyna, V.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    Temperature dependence of luminescence intensity inherent to zinc telluride films prepared by the method of vacuum deposition and containing an oxygen impurity was investigated. The model explaining non-monotonous behaviour ...
  • Heat-resistant ohmic and barrier contacts for GaAs-based microwave devices 
    Ivanov, V.N.; Konakova, R.V.; Milenin, V.V.; Stovpovoi, M.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    We studied barrier and ohmic contacts that are used when developing GaAs-based microwave devices. It is shown that Au-Mo-TiBx-n-GaAs barrier contacts have higher thermal stability than Au-Ti-n-GaAs ones. This is due to ...
  • Properties of the shallow D-centers in semiconductors with polar and covalent binding 
    Kashirina, N.I.; Lakhno, V.D.; Sychyov, V.V.; Sheinkman, M.K. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    The theoretical consideration of the energy of the lowest singlet and triplet terms of shallow D¯-centers (two electrons, bound with one-charge Coulomb center) in semiconductors with an ionic and covalent binding has been ...
  • Capture coefficients of free excitons by shallow acceptors and donors in gallium arsenide 
    Glinchuk, K.D.; Litovchenko, N.M.; Strilchuk, O.N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    An analysis of the 4.2 K exciton luminescence spectra of semi-insulating GaAs crystals with different concentrations of shallow acceptors (С) and donors (Si) is given. As a result, the 4.2 K capture coefficients of free ...
  • Injection currents in lamellar crystals of gallium telluride 
    Madatov, R.S.; Tagiyev, T.B.; Gabulov, I.A.; Abbasova, T.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    The results of researches of electrical properties and injection currents in lamellar samples of p-type gallium telluride with the purpose of determination of charge transfer mechanism both in the Ohm law regime and in the ...
  • Resonance Raman scattering by intersubband plasmon-phonon excitations in InAs/AlSb structures 
    Valakh, M.Ya.; Strelchuk, V.V.; Kolomys, O.F.; Hartnagel, H.L.; Sigmund, J. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    Intersubband plasmon-phonon excitations in InAs/AlSb with InSb- and AlAs-like interfaces were studied using the Raman scattering method. It was found that InSb interface is characterized by a decreasing concentration and ...

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