Наукова електронна бібліотека
періодичних видань НАН України
періодичних видань НАН України
Topography of Si epitaxial monolayers obtained on Si (001) substrate by computer simulations
Репозиторій DSpace/Manakin
- Домашня сторінка
- →
- Фізико-технічні та математичні науки
- →
- Відділення фізики і астрономії
- →
- Semiconductor Physics Quantum Electronics & Optoelectronics
- →
- Semiconductor Physics Quantum Electronics & Optoelectronics, 2003, том 6
- →
- Semicond. Physics Quantum Electronics & Optoelectronics, 2003, № 2
- →
- Переглянути статтю
JavaScript is disabled for your browser. Some features of this site may not work without it.
Topography of Si epitaxial monolayers obtained on Si (001) substrate by computer simulations
Інший ID:
PACS: 02.70.Uu, 61.43.Bn
Посилання:
Topography of Si epitaxial monolayers obtained on Si (001) substrate by computer simulations / L. Pyziak, W. Obermayr, K. Zembrowska, M. Kuzma // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 2. — С. 183-188. — Бібліогр.: 40 назв. — англ.
Дата:
2003
Переглядів:
718
Завантажень:
353
Анотація:
Fractal analysis was used for the description of the geometry of the clusters formed within the Monte Carlo simulation of the first monolayer growth on Si substrate. Pulse laser deposition method was assumed for the epitaxy. Layers were obtained for various substrate temperatures varying in the range from 600 K to 800 K. The topography of plane clusters formed were characterised by their fractal box-like dimension. The relation between this dimension and the shape of the clusters was addressed.
