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Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics, 2003, том 6 за назвою

Репозиторій DSpace/Manakin

Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics, 2003, том 6 за назвою

Сортувати за: Порядок: Результатів:

  • Heat-resistant ohmic and barrier contacts for GaAs-based microwave devices 
    Ivanov, V.N.; Konakova, R.V.; Milenin, V.V.; Stovpovoi, M.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    We studied barrier and ohmic contacts that are used when developing GaAs-based microwave devices. It is shown that Au-Mo-TiBx-n-GaAs barrier contacts have higher thermal stability than Au-Ti-n-GaAs ones. This is due to ...
  • High efficient solar cells and modules based on diamond-like carbon film - multicrystalline Si structures 
    Klyui, N.I.; Korneta, O.B.; Kostylyov, V.P.; Litovchenko, V.G.; Makarov, A.V.; Dikusha, V.N.; Neselevska, L.V.; Gorbulik, V.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    In the work the results of investigations of developed and produced solar cells (SC) and modules (SM) characteristics are presented. It has been shown that due to application of hydrogen plasma treatment and deposition of ...
  • High-power low-frequency current oscillations in germanium samples 
    Pavljuk, S.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    Experimental investigation of high-power low-frequency current oscillations in germanium samples with low injecting contacts is discussed in this article. The results obtained were explained by periodic formation, transport ...
  • High-resistance low-doped GaAs and AlGaAs layers obtained by LPE 
    Krukovsky, S.I.; Zayachuk, D.M.; Rybak, O.V.; Mryhin, I.O. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    Influence of Yb and Al co-doping gallium melt during LPE growth of the GaAs epitaxial layers on their properties is investigated. It is shown that both morphology and electrophysical parameters of the films are changed ...
  • High-temperature configurations of dimers in Si (001) surface layers 
    Kiv, A.E.; Maksymova, T.I.; Moiseenko, N.V.; Soloviev, V.N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    Molecular Dynamics (MD) simulation of Si (001) surface layers was performed. In the modified algorithm of MD the potential is corrected on each step of calculation. The corrections account the re-hybridization of chemical ...
  • High-temperature injection spectroscopy of deep traps in CdTe polycrystalline films 
    Opanasyuk, A.S.; Opanasyuk, N.N.; Tirkusova, N.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    The paper provides the direct experimental method to determine the localized state energy distribution function for semiconducting solid materials based on space-charge-limited current-voltage characteristics. The ...
  • Influence of cation vacancy related defects on the self-assembly processes in CdSe/ZnSe quantum dot heterostructures 
    Borkovska, L.V.; Korsunska, N.O.; Kushnirenko, V.I.; Sadofyev, Yu.G.; Sheinkman, M.K. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    A spatial distribution of the cation vacancy related defects and their influence on the formation processes of self-assembled nanoislands in CdSe/ZnSe heterostructures were investigated by photoluminescence methods. ...
  • Influence of elastic deformation on the residual ellipticity of polished optical materials 
    Maslov, V.P.; Sarsembaeva, A.Z.; Sizov, F.F. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    The elastic deformation of thin mirrors is widely used in systems of adaptive optics, however, there are no data upon investigations of influence of elastic deformations on parameters of reflected polarised light in the ...
  • Injection currents in lamellar crystals of gallium telluride 
    Madatov, R.S.; Tagiyev, T.B.; Gabulov, I.A.; Abbasova, T.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    The results of researches of electrical properties and injection currents in lamellar samples of p-type gallium telluride with the purpose of determination of charge transfer mechanism both in the Ohm law regime and in the ...
  • Investigation of some mechanisms for formation of exciton absorption bands in layered semiconductor n-InSe and p-GaSe crystals 
    Zhirko, Yu.I.; Zharkov, I.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    We show that processes of creation, radiation and decay of the ground (n = 1) and excited exciton states in layered n-InSe and p-GaSe crystals involve direct (photon -> exciton -> photon, at k = 0), as well as indirect ...
  • Investigation of superlattice structure parameters using quasi-forbidden reflections 
    Kladko, V.P.; Datsenko, L.I.; Korchovyi, A.A.; Machulin, V.F.; Lytvyn, P.M.; Shalimov, A.V.; Kuchuk, A.V.; Kogutyuk, P.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    We studied possibilities of a nondestructive X-ray technique for testing short-period strained GaAs-AlAs superlattices. An analysis of the quasi-forbidden 200 reflections may be used for determination of superlattice layer ...
  • Investigation of the optical and acoustical phonon modes in Si₁₋xGex QD SLs 
    Dzhagan, V.N.; Krasil'nik, Z.F.; Lytvyn, P.M.; Novikov, A.V.; Valakh, M.Ya.; Yukhymchuk, V.O. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    Single- and multilayer structures with Si₁₋xGex nanoislands have been investigated using the Raman scattering technique. The values of the mechanical strain and composition were determined in the islands of the both ...
  • Investigations of physical mechanisms of metal-insulator transition in highly strained n-Si and n-Ge crystals 
    Budzulyak, S.I.; Ermakov, V.M.; Kyjak, B.R.; Kolomoets, V.V.; Machulin, V.F.; Novoselets, M.K.; Panasjuk, L.I.; Sus', B.B.; Venger, E.F. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    Analysis of experimental results on transport phenomena is presented for highly uniaxially strained silicon and germanium crystals heavily doped by shallow donors. Possible mechanisms of the strain induced metal-insulator ...
  • Ion induced field effect in silicon in nematic liquid crystal cell 
    Kucheev, S.I.; Gritsenko, M.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    An influence of ion charge on surface conductivity of silicon in In₂O₃/5CB/monocrystal silicon/Al structure, in which a specific resistance of silicon is much less than a specific resistance of liquid crystal layer, was ...
  • Magnetic point contact in ferromagnetic semiconductor (Ga,Mn)As 
    Figielski, T.; Wosinski, T.; Morawski, A.; Pelya, O.; Makosa, A.; Dobrowolski, W.; Wrobel, J.; Sadowski, J.; Jagielski, J.; Ratajczak, J. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    We show that narrow constrictions, a few hundred nanometers wide, in ferromagnetic semiconductor (Ga,Mn)As layer exhibit large spin-related magnetoresistance. Moreover, we demonstrate that application of oxygen-ions ...
  • Many particle and bandstructure effects in intersubband quantum well optics 
    Pereira Jr., M.F. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    In this paper, intersubband optical absorption spectra are computed from an optical susceptibility derived from the many-body formalism. The theory is valid for both non-equilibrium and equilibrium conditions. Numerical ...
  • Mechanism of photoinduced luminescence degradation in CdSxSe₁₋x quantum dots 
    Kunets, V.P.; Kulish, N.R.; Lisitsa, M.P.; Bryksa, V.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    A possible mechanism of the photoinduced luminescence degradation in the hexagonal CdSxSe₁₋x quantum dots synthesized in a glass matrix is discussed using luminescence decay kinetic investigations and ab initio calculations ...
  • Mechanisms of forward current transport in p-GaSe-n-InSe heterojunctions 
    Kovalyuk, Z.D.; Makhniy, V.P.; Yanchuk, O.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    Voltage-current characteristics forwardly biased heterojunctions p-GaSe-n-InSe made by the method of optical contact are analyzed. Asit was ascertained, the forward current is determined by tunnel-recombination processes ...
  • Metastable interstitials in CdSe and CdS crystals 
    Borkovska, L.V.; Bulakh, B.M.; Khomenkova, L.Yu.; Korsunska, N.O.; Markevich, I.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    An "anomalous" defect drift in external electric field, namely, transport of acceptorlike centres from the anode to the cathode, has been observed in CdS:Cu, CdS:Ag and nominally undoped CdSe crystals at 350-700 K. The ...
  • Modeling high performance multilayer antireflection coatings for visible and infrared (3-5μm) substrates 
    Asghar, M.H.; Khan, M.B.; Naseem, S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    Multilayer antireflection coatings have been modeled in visible and IR (3-5μm) bands to reduce reflectance from glass, germanium (Ge), silicon (Si) and zinc selenide (ZnSe) substrates. The transmittance of bare glass ...

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