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Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics, 2008, том 11 за назвою

Репозиторій DSpace/Manakin

Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics, 2008, том 11 за назвою

Сортувати за: Порядок: Результатів:

  • A neural computation to study the scaling capability of the undoped DG MOSFET 
    Djeffal, F.; Guessasma, S.; Benhaya, A.; Bendib, T. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2008)
    The DG MOSFET is one of the most promising candidates for further CMOS scaling beyond the year of 2010. It will be scaled down to various degrees upon a wide range of system/circuit requirements (such as high-performance, ...
  • Author Index 2008 
    Автор відсутній (Semiconductor Physics Quantum Electronics & Optoelectronics, 2008)
  • Combined Fourier hologram as a noise-resist method of synthesis 2D computer-generated hologram with single diffractive order 
    Braginets, E.V.; Girnyk, V.I.; Kostyukevich, S.A.; Kurashov, V.N.; Bushma, A.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2008)
    In this paper, a comparative analysis of two approaches to synthesis 2D hologram, which restores optical field without conjugated images, is performed. These holograms are used in embossed rainbow protective holograms ...
  • Design of optical-electronic sensor for ablation of spacecraft heat protection 
    Hornostaev, G.; Pasichny, V.; Lytvynenko, Yu. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2008)
    Results of designing and studying the characteristics of the fiber-optic sensor for the ablation of the low-sublimating heat protection which intended for the use on the being got down module of article “Mars-5” are ...
  • Development of a KDP crystal growth system based on TRM and characterization of the grown crystals 
    Javidi, S.; Faripour, H.; Esmaeil Nia, M.; Sepehri, K.F.; Ali Akbari, N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2008)
    A solution growth system has been built based on temperature reduction method [1]. A few KDP crystals were grown by the system up to 160×40×38 mm dimensions. Spectrophotometer transmission spectra from (100) planes of ...
  • Dielectric studies of dispersions of carbon nanotubes in liquid crystal 5CB 
    Koval'chuk, A.; Dolgov, L.; Yaroshchuk, O. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2008)
    The frequency dependences of the imaginary ε″ and real ε′ parts of complex dielectric permittivity inherent to planarly aligned layers of nematic liquid crystals 5CB doped with multiwalled carbon nanotubes (CNT) were ...
  • Direct current transport mechanisms in n-InSe/p-CdTe heterostructure 
    Gorley, P.M.; Prokopenko, I.V.; Grushka, Z.M.; Makhniy, V.P.; Grushka, O.G.; Chervinsky, O.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2008)
    The authors created n-InSe/p-CdTe heterojunction by deposition over optical contact, investigated temperature evolution of its current-voltage dependences under the forward bias, and determined the prevailing current ...
  • Effect of La³⁺ ions on the habit of KDP crystals 
    Javidi, S.; Esmaeil Nia; Aliakbari, N.; Taheri, F. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2008)
    A few KDP (KH2PO4) and KDP: La³⁺ (LaCl₃) single crystals were grown being based on the temperature reduction method. Investigations show that the presence of three valent ions like La³⁺ could be a cause of retarded growth ...
  • Effect of low-temperature treatments on photoluminescence enhancement of ion-beam synthesized Si nanocrystals in SiO₂ matrix 
    Khatsevich, I.; Melnik, V.; Popov, V.; Romanyuk, B.; Fedulov, V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2008)
    The results of experimental researches of photoluminescence (PL) spectra in Si nanocluster structures obtained by implantation of silicon ions to SiO₂-Si structures with high-temperature (1100 °C) and following low-temperature ...
  • Effect of molecular sieves on discrimination efficiency of a multisensor gas-analysis system 
    Kruglenko, I.V.; Shirshov, Yu.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2008)
    We investigated the effect of zeolite at the sample input of a gas-analysis system (Electronic Nose) on recognition of volatile molecular mixtures. It is shown that the NaX molecular sieves can remove ketone-type molecules ...
  • Effect of the state of the surface layers on the strength of materials for optoelectronic and sensors devices 
    Maslov, V.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2008)
    The goal of this work is to determine the correlation of the strength of brittle amorphous nonmetallic materials with the defective surface layers and their physical properties. The defective surface layer of materials ...
  • Electrical and light-emitting properties of silicon dioxide co-implanted by carbon and silicon ions 
    Nazarov, A.N.; Osiyuk, I.N.; Tiagulskyi, S.I.; Lysenko, V.S.; Tyagulskyy, I.P.; Torbin, V.N.; Omelchuk, V.V.; Nazarova, T.N.; Rebohle, L.; Skorupa, W. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2008)
    In this paper we explore the electrophysical and electroluminescence (EL) properties of thermally grown 350 nm thick SiO₂ layers co-implanted with Si⁺ and C⁺ ions. The implanting fluencies were chosen in such a way ...
  • Electrical properties of fast cooled InSe single crystals 
    Zaslonkin, A.V.; Kovalyuk, Z.D.; Mintyanskii, I.V.; Savitskii, P.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2008)
    Influence of fast cooling on electrical properties of n-InSe single crystals is investigated for an ingot grown by the Bridgman method. Electrical characteristics and their anisotropy are investigated in the temperature ...
  • Electrical properties of fast cooled inse single crystals 
    Zaslonkin, A.V.; Kovalyuk, Z.D.; Mintyanskii, I.V.; Savitskii, P.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2008)
    Influence of fast cooling on electrical properties of n-InSe single crystals is investigated for an ingot grown by the Bridgman method. Electrical characteristics and their anisotropy are investigated in the temperature ...
  • Factor of interfacial potential for the surface plasmon-polariton resonance sensor response 
    Lopatynskyi, A.M.; Lopatynska, O.G.; Poperenko, L.V.; Chegel, V.I.; Guiver, M.D. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2008)
    In this work, we investigate how the application of an external potential difference to the sensitive gold-electrolyte interface influences the optical response of a sensor based on the surface plasmon-polariton resonance ...
  • Features of the super prism effect in multilayer dielectric coatings 
    Pervak, Yu.A.; Onitchuk, V.M.; Pervak, V.Yu. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2008)
    We demonstrate that the strong change of reflected beam intensity in the spectral range of the super-prism effect not allow to use periodic multilayer coatings as effective wavelength division multiplexing devices. But ...
  • Finding of the optimal parameters of animated and stereographic rainbow diffractive images 
    Borisov, I.S.; Girnyk, V.I.; Kostyukevych, S.A.; Grygoruk, V.I.; Kostyukevych, K.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2008)
    We have considered the basic aspects of the technology of animated and stereographic rainbow images. These images can be included in Optical Security Devices (OSDs) in order to increase their structure complexity and to ...
  • Fluctuations of current, electroluminescence and acoustic emission in light-emitting А³В⁵ heterostructures 
    Vlasenko, A.I.; Lyashenko, O.V.; Oleksenko, P.F.; Veleschuk, V.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2008)
    It is shown, that in heterostructures based on A³B⁵ compounds acoustic emission occurrence, current and light fluctuations, evolution electroluminescence spectrums, current-voltage characteristics degradation occur ...
  • Formation and activation of defects in films of AIVBVI compounds in the process of growing from vapor phase 
    Saliy, Ya.P.; Freik, I.M.; Prokopiv (Jr), V.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2008)
    The work has suggested an adequate model describing formation of defects in films of AIVBVI compounds in vapor-phase growth. Being based on this model, it has given an analytical description of dependences for film ...
  • Hall mobility of charge carriers in films of (PbX)₁₋x (Sm₂X₃)x semiconductors formed on porous silicon 
    Hasanov, H.A.; Murguzov, M.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2008)
    Presented paper is devoted to studying the methods to prepare epitaxial films of (PbX)₁₋x(Sm₂X₃)x − (X – S, Se, Te; x = 0.04) semiconductors and to examine the Hall mobility of charge carriers in these films. It is ...

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