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Semiconductor Physics Quantum Electronics & Optoelectronics, 2008, том 11
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Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics, 2008, том 11 за датою випуску

Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics, 2008, том 11 за датою випуску

Результати 1-20 з 68

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Selective unequal-thickness thin-film filters for IR spectral region

Yaremchuk, I.Ya.; Fitio, V.M.; Bobitski, Ya.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2008)

A new five-layer structure of the dielectric interference filter for the infra-red region of spectrum is investigated. The main spectral parameters of such a narrow-band filter are determined. The dependence of the ...
Photoconversion efficiency of quantum-well solar cells for the optimum doping level of a base

Sachenko, A.V.; Sokolovskyi, I.O. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2008)

Analytical expressions for the maximum obtainable photoconversion efficiency of quantum-well solar cells (QWSCs) under AM0 conditions are given. The modeling of the photoconversion efficiency of QWSCs under AM1.5 ...
Spectral photosensitivity of the m-n⁰-n structure on the basis of epitaxial layers

Yodgorova, D.M.; Karimov, A.V.; Giyasova, F.A.; Saidova, R.A.; Yakubov, A.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2008)

The results of studies of the spectral characteristics of the m-n⁰-n-structure with a base area on the basis of thin epitaxial specified undoped GaInAs and oxygendoped AlGaAs layers are presented. It is experimentally ...
Investigation of ZnO single crystals subjected to a high uniform magnetic field in the IR spectral range

Venger, E.F.; Evtushenko, A.I.; Melnichuk, L.Yu.; Melnichuk, O.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2008)

Based on the experimental data obtained, we performed the theoretical investigation of the external reflectance coefficients of uniaxial optically anisotropic polar ZnO single crystals subjected to the action of a high ...
Using ellipsometry methods for depth analyzing the optical disc data layer relief structures

Kravets, V.G.; Gorbov, I.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2008)

We studied the relief depth of the data layer formed in a glass disk by ion beam etching process with using classical ellipsometry at the constant wavelength 632.8 nm for different angles of incidence. It was found that ...
Matrix models of bar graph data display for bicyclic excitation of the optoelectronic scale

Bushma, A.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2008)

In this work, being based on the theory of sets and matrix formulation of the information area for a bar graph display the author obtained a matrix description for electric signals necessary to form two variants of ...
A neural computation to study the scaling capability of the undoped DG MOSFET

Djeffal, F.; Guessasma, S.; Benhaya, A.; Bendib, T. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2008)

The DG MOSFET is one of the most promising candidates for further CMOS scaling beyond the year of 2010. It will be scaled down to various degrees upon a wide range of system/circuit requirements (such as high-performance, ...
Heat-resistant barrier and ohmic contacts based on TiBx and ZrBx interstitial phases to microwave diode structures

Belyaev, A.E.; Boltovets, N.S.; Ivanov, V.N.; Kladko, V.P.; Konakova, R.V.; Kudryk, Ya.Ya.; Milenin, V.V.; Sheremet, V.N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2008)

We investigated thermal stability of Au–TiBx (ZrBx) barrier contacts, as well as ohmic contacts with a TiBx diffusion barrier to n-Si (GaAs, InP, GaP, GaN, SiC). The electrophysical measurements of Schottky barrier diodes ...
Theoretical consideration of charge transport through the nanoindentor/GaAs junction

Kosogor, A.O.; Nowak, R.; Chrobak, D.; L’vov, V.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2008)

The process of indentation of GaAs single crystal by the conductive nanoindentor has been analyzed theoretically. The diode formed by the nanoindentor tip and small area of GaAs platelet has been considered. The evolution ...
Combined Fourier hologram as a noise-resist method of synthesis 2D computer-generated hologram with single diffractive order

Braginets, E.V.; Girnyk, V.I.; Kostyukevich, S.A.; Kurashov, V.N.; Bushma, A.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2008)

In this paper, a comparative analysis of two approaches to synthesis 2D hologram, which restores optical field without conjugated images, is performed. These holograms are used in embossed rainbow protective holograms ...
The resolution function and effective response of piezoelectric thin films in Piezoresponse Force Microscopy

Morozovska, A.N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2008)

The elastic Green function and resolution function in Piezoresponse Force Microscopy (PFM) of thin piezoelectric film capped on the rigid substrate are derived. The extrinsic size effect on the resolution function is ...
Instability of 2DEG interacting with drifting 3DEG

Boiko, I.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2008)

Dispersion law is studied for high-frequency longitudinal plasma waves in 2DEG (the plane z = 0), separated by thin dielectric layer from half-limited 3DEG. It is shown that drift of 3DEG provokes for special conditions ...
Design of optical-electronic sensor for ablation of spacecraft heat protection

Hornostaev, G.; Pasichny, V.; Lytvynenko, Yu. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2008)

Results of designing and studying the characteristics of the fiber-optic sensor for the ablation of the low-sublimating heat protection which intended for the use on the being got down module of article “Mars-5” are ...
The composition effect on the bowing parameter in the cubic InGaN, AlGaN and AlInN alloys

Berrah, S.; Boukortt, A.; Abid, A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2008)

Numerical simulation based on FP-LAPW calculations is applied to study direct and indirect band gap energy of the cubic AlxGa₁₋xN, InxGa₁₋xN and InxAl₁₋xN alloys.The direct and indirect band-gap bowing parameter is ...
Shack-hartmann wavefront sensor with holographic lenslet array for the aberration measurements in a speckle field

Podanchuk, D.V.; Kurashov, V.N.; Dan’ko, V.P.; Kotov, M.M.; Sutyagina, N.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2008)

The application of a Shack-Hartmann sensor with holographic lenslet array to the measurements of wavefront aberrations in a speckle field is offered. The main feature of the method is that the tested wave front can be ...
Universal Electro-Optical Hybrid Logic Gates

Ekkurthi Sreenivasa Rao; Satyam, M.; Lal Kishore, K. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2008)

An Electro-Optical Hybrid Logic Gate is defined as a circuit which accepts either electrical or optical signals and produces both electrical and optical signals. This paper explores the feasibility to develop universal ...
Formation and activation of defects in films of AIVBVI compounds in the process of growing from vapor phase

Saliy, Ya.P.; Freik, I.M.; Prokopiv (Jr), V.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2008)

The work has suggested an adequate model describing formation of defects in films of AIVBVI compounds in vapor-phase growth. Being based on this model, it has given an analytical description of dependences for film ...
Finding of the optimal parameters of animated and stereographic rainbow diffractive images

Borisov, I.S.; Girnyk, V.I.; Kostyukevych, S.A.; Grygoruk, V.I.; Kostyukevych, K.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2008)

We have considered the basic aspects of the technology of animated and stereographic rainbow images. These images can be included in Optical Security Devices (OSDs) in order to increase their structure complexity and to ...
Research of Structural Quality of Big-Size KDP Crystals

Salo, V.I.; Tkachenko, V.F.; Puzikov, V.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2008)

The faulted structure formation at a rapid growing of big-size KDP crystals has been analyzed. A transitional zone with high degree of lattice faultness has been revealed between the seed and the pure zone of the grown ...
Radiation dynamics of injection lasers with saturating absorber in resonator

Manak, I.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2008)

The structure of a GaAlAs laser with saturating absorber in a resonator and a method of research of the light generation dynamics with the use of an optical stroboscopic oscilloscope OSO-1 which has a time resolution of ...

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Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics, 2008, том 11 за датою випуску

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Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics, 2008, том 11 за датою випуску

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