Наукова електронна бібліотека
періодичних видань НАН України
періодичних видань НАН України
Electrical properties of fast cooled InSe single crystals
Репозиторій DSpace/Manakin
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- Фізико-технічні та математичні науки
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- Відділення фізики і астрономії
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- Semiconductor Physics Quantum Electronics & Optoelectronics
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- Semiconductor Physics Quantum Electronics & Optoelectronics, 2008, том 11
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- Semicond. Physics Quantum Electronics & Optoelectronics, 2008, № 1
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Electrical properties of fast cooled InSe single crystals
Інший ID:
PACS 72.20.Dp, 72.20.-i, 81.10.Fq
Посилання:
Electrical properties of fast cooled InSe single crystals / A.V. Zaslonkin, Z.D. Kovalyuk, I.V. Mintyanskii, P.I. Savitskii // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2008. — Т. 11, № 1. — С. 54-58. — Бібліогр.: 17 назв. — англ.
Підтримка:
This work was supported by the Science and Technology
Center of Ukraine (grant No. 3237).
Дата:
2008
Переглядів:
535
Завантажень:
339
Анотація:
Influence of fast cooling on electrical properties of n-InSe single crystals is
investigated for an ingot grown by the Bridgman method. Electrical characteristics and
their anisotropy are investigated in the temperature range 80 to 410 K. It is found that
fast cooling, as soon as crystallization is completed, of the ingot leads to an increase of
the free electron concentration, conductivity along layers, and conductivity anisotropy, as
well as to a decrease of the Hall mobility of carriers along layers. The theoretical analysis
of the mobility of carriers has shown that space-charge regions underlie the effective
mechanism of their scattering.
