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Development of a KDP crystal growth system based on TRM and characterization of the grown crystals
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- Фізико-технічні та математичні науки
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- Відділення фізики і астрономії
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- Semiconductor Physics Quantum Electronics & Optoelectronics
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- Semiconductor Physics Quantum Electronics & Optoelectronics, 2008, том 11
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- Semicond. Physics Quantum Electronics & Optoelectronics, 2008, № 3
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Development of a KDP crystal growth system based on TRM and characterization of the grown crystals
Інший ID:
PACS 42.70.Mp, 77.84.Fa, 81.10.Dn
Посилання:
Development of a KDP crystal growth system based on TRM and characterization of the grown crystals / S. Javidi, H. Faripour, M. Esmaeil Nia, K. F. Sepehri, N. Ali Akbari // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2008. — Т. 11, № 3. — С. 248-251. — Бібліогр.: 15 назв. — англ.
Підтримка:
The authors are indebted to Dr. M. Maleki for his helpful
advices concerning the reviewing of this article, they
also wish to thank V. Faghihi on aspects of the laser
damage threshold experiment, Z. Dorriz for providing
spectral curve, N. Afshari for providing XRD curve,
H. Kalbasi for making microhardeness testing, and
workshop personnel for their technical assistance.
Дата:
2008
Переглядів:
756
Завантажень:
538
Анотація:
A solution growth system has been built based on temperature reduction
method [1]. A few KDP crystals were grown by the system up to 160×40×38 mm
dimensions. Spectrophotometer transmission spectra from (100) planes of the grown
crystals show about 86 % transmission in the visible region. XRD analysis, laser damage
threshold, and microhardness of the crystals were determined. The etching behavior of
surface features of grown KDP single crystals was studied in different etchants.
