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Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics, 2011, том 14 за назвою

Репозиторій DSpace/Manakin

Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics, 2011, том 14 за назвою

Сортувати за: Порядок: Результатів:

  • Effect of low-temperature annealing on light-emitting properties of na-Si/SiOx porous nanocomposite films 
    Lisovskyy, I.P.; Litovchenko, V.G.; Zlobin, S.O.; Voitovych, M.V.; Khatsevich, I.M.; Indutnyy, I.Z.; Shepeliavyi, P.E.; Kolomys, O.F. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    The effect of low-temperature annealing on light emitting properties of naSi/SiOx porous column-like nanocomposite films has been studied. Influence of type of chemically active gas or inert ambient on PL characteristics ...
  • Effect of magnetic field on the reconstruction of the defect-impurity state and сathodoluminescence in Si/SiO₂ structure 
    Steblenko, L.P.; Koplak, O.V.; Syvorotka, I.I.; Kravchenko, V.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    Impurity states in Si/SiO₂ structure have been studied using cathodoluminescence (CL). It has been found that intrinsic structure defects in Si/SiO2 are sensitive to the action of magnetic field, which can be revealed ...
  • Effect of microwave radiation on optical characteristics of thin gold films 
    Boltovets, P.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    The possibility to use a complex of chemical and physical factors to form sensor surface with tunable properties was considered. It was demonstrated that the simultaneous treatment of thin gold films with guanidine thiocyanate ...
  • Electrical properties of MIS structures with silicon nanoclusters 
    Bunak, S.V.; Ilchenko, V.V.; Melnik, V.P.; Hatsevych, I.M.; Romanyuk, B.N.; Shkavro, A.G.; Tretyak, O.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    The theoretical and experimental investigations of electrical properties of the Al-SiO₂-( − ncsSi -SiO₂-Si structures grown using high temperature annealing SiOx, x < 2, have been carried out. It has been experimentally ...
  • Electromagnetic field quantization in planar absorbing heterostructures 
    Pipa, V.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    The quantization scheme for the electromagnetic field in planar absorbing heterostructures has been developed. The scheme is based on the field expansion over a complete set of orthonormal modes. We used two types of the ...
  • Electrophysical properties of meso-porous silicon free standing films modified with palladium 
    Manilov, A.I.; Skryshevsky, V.A.; Alekseev, S.A.; Kuznetsov, G.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    Resistivity and complex impedance voltage dependences for thick mesoporous silicon free layers were studied in this work. The asymmetrical by the sign of applied voltage experimental curves at low frequencies have been ...
  • Energy band gap and electrical conductivity of Cd₁₋xMnxTe alloys with different manganese content 
    Kosyachenko, L.A.; Rarenko, I.M.; Aoki, T.; Sklyarchuk, V.M.; Maslyanchuk, O.L.; Yurtsenyuk, N.S.; Zakharuk, Z.І. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    The optical and electrical properties of single Cd₁₋xMnxTe (x = 0.07 - 0.40) crystals with p-type conduction and resistivity 10⁴– 10⁸ Ohm⋅cm have been studied. The band gaps of the samples and their temperature dependences ...
  • Enhanced 2D plotting method for scanning probe microscopy imaging 
    Beketov, G.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    An enhanced 2D plotting method for scanning probe microscopy imaging implementing a gradient-based value mapping for pseudocolor images and its application to studies of epitaxial layer surface morphology is presented. It ...
  • Features of a shock wave in CdTe by pulsed laser irradiation 
    Dauletmuratov, B.K. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    Analyzed on the example of CdTe are formation and propagation of shock waves during pulsed laser irradiation of a solid surface. It is shown that before the appearance of a shock wave in a solid, a gradual increase in ...
  • Ferromagnetism in Co-doped ZnO films grown by molecular beam epitaxy: magnetic, electrical and microstructural studies 
    Strelchuk, V.V.; Bryksa, V.P.; Avramenko, K.A.; Lytvyn, P.M.; Valakh, M.Ya.; Pashchenko, V.O.; Bludov, O.M.; Deparis, C.; Morhain, C.; Tronc, P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    We studied structural, optical and magnetic properties of high-quality 5 and 15% Co-doped ZnO films grown by plasma-assisted molecular beam epitaxy (MBE) on (0001)- sapphire substrates. Magnetic force microscopy (MFM) and ...
  • Formation of silicon nanoclusters in buried ultra-thin oxide layers 
    Oberemok, O.S.; Litovchenko, V.G.; Gamov, D.V.; Popov, V.G.; Melnik, V.P.; Gudymenko, O.Yo.; Nikirin, V.A.; Khatsevich, І.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    The peculiarities of buried layer formation obtained by co-implantation of O2 ions with the energy of 130 keV and carbon ions within the energy range of 30-50 keV have been investigated. The corresponding ion doses for ...
  • High-temperature expansion in self-consistent-field theory of spin-crossover compounds 
    Gudyma, Iu.V.; Daskal, Ye.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    In the paper, spin-crossover compounds were examined from the viewpoint of perturbation theory for self-consistent field. The research carried out in the framework of the Ising-like model for these compounds. We have ...
  • Hydrothermal synthesis and properties of titania nanotubes doped with Fe, Ni, Zn, Cd, Mn 
    Kulish, M.R.; Struzhko, V.L.; Bryksa, V.P.; Murashko, A.V.; Il’in, V.G. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    Fe/TiO₂, Mn/TiO₂, Zn/TiO₂, Cd/TiO₂, Ni/TiO₂ titania nanotubes were synthesized by the method of direct hydrothermal synthesis. Their properties have been investigated using X-ray phase analysis and X-ray fluorescent analysis, ...
  • Impact of sidewall spacer on gate leakage behavior of nano-scale MOSFETs 
    Rana, A.K.; Chand, N.; Kapoor, V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    Semiconductor devices with a low gate leakage current are preferred for low power application. As the devices are scaled down, sidewall spacer for CMOS transistor in nano-domain becomes increasingly critical and plays ...
  • Influence of Ca²⁺ ions on the habit of KDP crystals 
    Javidi, S.; Enayati, R.; Iraj, M.; Aliakbari, N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    A few KDP (KH₂PO₄) and KDP:Ca²⁺ (CaCl₂) single crystals were grown based on the temperature reduction method. Investigations show that the presence of bivalent ions like Ca²⁺ could be a cause of retarded growth rate and ...
  • Influence of electron-electron drag on piezoresistance of n-Si 
    Boiko, I.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    Piezoresistance of n-Si is considered with due regard for inter-valley drag. It has been shown that inter-valley drag gains the piezocoefficient and diminishes the mobility. In the region of nondegenerate carriers, the ...
  • Influence of mutual drag of light and heavy holes on conductivity of p-silicon and p-germanium 
    Boiko, I.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    Conductivity of p-Si and p-Ge is considered for the two-band model with due regard for mutual drag of light and heavy holes. It is shown that for small and moderate temperatures this drag significantly diminishes the ...
  • Influence of mutual drag of light and heavy holes on magnetoresistivity and Hall-effect of p-silicon and p-germanium 
    Boiko, I.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    Hall-effect and magnetoresistivity of holes in silicon and germanium are considered with due regard for mutual drag of light and heavy band carriers. Search of contribution of this drag shows that this interaction has a ...
  • Influence of polarization of conduction electrons in semiconductor on their light absorption 
    Severin, V.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    The influence of polarization of conduction electrons in semiconductor on their light absorption is examined. The Drude model is used for the description of an electron motion inside conduction band. Account of electron ...
  • Influence of polarization of free-electron system in semiconductor on the position of minimum in plasma light reflection 
    Severin, V.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    The dielectric permeability of the free-electron system in semiconductor is usually considered using the Drude-Lorentz model without taking into account this system polarization. But it seems reasonable to include ...

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