Energy band gap and electrical conductivity of Cd₁₋xMnxTe alloys with different manganese content

Домашня сторінка
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Фізико-технічні та математичні науки
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Відділення фізики і астрономії
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Semiconductor Physics Quantum Electronics & Optoelectronics
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Semiconductor Physics Quantum Electronics & Optoelectronics, 2011, том 14
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Semicond. Physics Quantum Electronics & Optoelectronics, 2011, № 4
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Energy band gap and electrical conductivity of Cd₁₋xMnxTe alloys with different manganese content

Kosyachenko, L.A. ; Rarenko, I.M. ; Aoki, T. ; Sklyarchuk, V.M. ; Maslyanchuk, O.L. ; Yurtsenyuk, N.S. ; Zakharuk, Z.І.

Інший ID: PACS 72.20.-i, 72.80.Ey, 78.20.Ci

URI: http://dspace.nbuv.gov.ua/handle/123456789/117789

Посилання: Energy band gap and electrical conductivity of Cd₁₋xMnxTe alloys with different manganese content / .A. Kosyachenko, I.M. Rarenko, T. Aoki, V.M. Sklyarchuk, O.L. Maslyanchuk, N.S. Yurtsenyuk, Z.І. Zakharuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 4. — С. 421-426. — Бібліогр.: 16 назв. — англ.

Дата: 2011

Завантажень: 434

Energy band gap and electrical conductivity of Cd₁₋xMnxTe alloys with different manganese content

Анотація:

The optical and electrical properties of single Cd₁₋xMnxTe (x = 0.07 - 0.40) crystals with p-type conduction and resistivity 10⁴– 10⁸ Ohm⋅cm have been studied. The band gaps of the samples and their temperature dependences have been determined. The electrical conductivity of this material and its temperature variation are explained in terms of statistics for electrons and holes in semiconductor with taking into account the compensation process. The energy of ionization and degree of compensation levels responsible for the electrical conductivity of the samples have been found.

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