Influence of polarization of conduction electrons in semiconductor on their light absorption

Домашня сторінка
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Фізико-технічні та математичні науки
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Відділення фізики і астрономії
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Semiconductor Physics Quantum Electronics & Optoelectronics
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Semiconductor Physics Quantum Electronics & Optoelectronics, 2011, том 14
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Semicond. Physics Quantum Electronics & Optoelectronics, 2011, № 4
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Influence of polarization of conduction electrons in semiconductor on their light absorption

Інший ID: PACS 77.22.Ch, Ej; 78.20.Bh, Ci, -e

URI: http://dspace.nbuv.gov.ua/handle/123456789/117795

Посилання: Influence of polarization of conduction electrons in semiconductor on their light absorption / V.S. Severin // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 4. — С. 445-451. — Бібліогр.: 19 назв. — англ.

Дата: 2011

Завантажень: 382

Influence of polarization of conduction electrons in semiconductor on their light absorption

Анотація:

The influence of polarization of conduction electrons in semiconductor on their light absorption is examined. The Drude model is used for the description of an electron motion inside conduction band. Account of electron screening the external electric field essentially modifies the expression for the light absorption coefficient in comparison with that in the traditional theory. As a result, the absorption spectrum becomes “resonance” like.

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