Formation of silicon nanoclusters in buried ultra-thin oxide layers

Домашня сторінка
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Фізико-технічні та математичні науки
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Відділення фізики і астрономії
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Semiconductor Physics Quantum Electronics & Optoelectronics
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Semiconductor Physics Quantum Electronics & Optoelectronics, 2011, том 14
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Semicond. Physics Quantum Electronics & Optoelectronics, 2011, № 3
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Formation of silicon nanoclusters in buried ultra-thin oxide layers

Oberemok, O.S. ; Litovchenko, V.G. ; Gamov, D.V. ; Popov, V.G. ; Melnik, V.P. ; Gudymenko, O.Yo. ; Nikirin, V.A. ; Khatsevich, І.M.

Інший ID: PACS 61.10.Nz, 61.72.Tt, 79.60.Jv, 78.55.-m

URI: http://dspace.nbuv.gov.ua/handle/123456789/117760

Посилання: Formation of silicon nanoclusters in buried ultra-thin oxide layers / O.S. Oberemok, V.G. Litovchenko, D.V. Gamov, V.G. Popov, V.P. Melnik, O.Yo. Gudymenko, V.A. Nikirin, І.M. Khatsevich // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 3. — С. 269-272. — Бібліогр.: 7 назв. — англ.

Підтримка: Financial support by the Ministry of Education and Science of Ukraine (Grant М/90-2010) is gratefully acknowledged. Many thanks for the long and very useful scientific discussion to Dr. B. Romanyuk. We also acknowledge the ion implantation group members, in particular G. Kalistyi and V. Fedulov.

Дата: 2011

Завантажень: 506

Formation of silicon nanoclusters in buried ultra-thin oxide layers

Анотація:

The peculiarities of buried layer formation obtained by co-implantation of O2 ions with the energy of 130 keV and carbon ions within the energy range of 30-50 keV have been investigated. The corresponding ion doses for carbon and oxygen ions were equal to 2 x 10¹⁶ cm⁻² and 1.8 x 10¹⁷ cm⁻², respectively. It has been observed that annealing at 1150 °C results in enhanced oxygen diffusion towards the region with a maximum carbon concentration. Analysis of X-ray diffraction patterns with a SIMS depth profiles inherent to annealed samples suggests formation of Si nanoclusters in the region with maximum concentrations of carbon and oxygen vacancies. The intensive luminescence has been observed with the maximum at 600 nm, which could be associated with silicon nano-inclusions in thin stoichiometric SiO₂ layer.

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