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Перегляд Semicond. Physics Quantum Electronics & Optoelectronics, 2000, № 3 за датою випуску

Репозиторій DSpace/Manakin

Перегляд Semicond. Physics Quantum Electronics & Optoelectronics, 2000, № 3 за датою випуску

Сортувати за: Порядок: Результатів:

  • Photopleochroism of surface-barrier structures based on semiinsulating cadmium telluride 
    Ilchuk, G.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    The method of mass-transfer reaction with compounds NH₄ (Cl, Br, J) as a transроrting agent is developed, and single crystals of semiinsulating CdTe are grown. Interaction of plane-polarized radiation with In-p-CdTe barrier ...
  • Optical properties of thin gold film 
    Kovalenko, S.A.; Fedorovych, R.D. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    Results of studing optical constants of thin gold films are given. The values of refraction and extinction coefficients (n, æ, respectively) are calculated from reflection and transmission spectra accordingly to traditional ...
  • Simple waveguide model of arbitrary filled plane-plane cavity 
    Anokhov, S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    Some waveguide features responsible for angular structure of a plane-plane cavity output emission, which were not discussed before, are considered. A number of common regularities in mode structure of such cavity at the ...
  • Comprehensive investigation of defects in highly perfect silicon single crystals 
    Prokopenko, I.V.; Kislovskii, E.N.; Olikhovskii, S.I.; Tkach, V.M.; Lytvyn, P.M.; Vladimirova, T.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    We used X-ray diffraction method of total rocking curves and nondestructive direct observation techniques (atomic force and scanning electron microscopies) to quantitatively determine the defect characteristics (radii and ...
  • About the nature of diffusion anisotropy in CdS crystals 
    Borkovskaya, L.V.; Dzhumaev, B.R.; Khomenkova, L.Yu.; Korsunskaya, N.E.; Markevich, I.V.; Sheinkman, M.K. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    Electrodiffusion of copper into nominally undoped high-resistivity CdS crystals at 250-400°C has been investigated. A strong diffusion anisotropy has been observed, copper diffusion in perpendicular to the c-axis direction ...
  • Thermoelectric properties of solid solutions based on tin telluride 
    Freik, D.M.; Galushchak, M.O.; Ivanishin, I.M.; Shperun, V.M.; Zapukhlyak, R.I.; Pyts, M.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    The relation of a thermoelectric parameters of the solid solutions based on tin telluride: SnTe-MnTe, SnTe-Cu₂Te and SnTe-In₂Te₃: Pb versus an amount of dopant impurity are investigated. The crystaloquasichemical mechanism ...
  • Hot wall growth and properties of lead telluride films doped by germanium and gallium 
    Lashkarev, G.V.; Radchenko, M.V.; Slynko, E.I.; Vodopiyanov, V.N.; Asotsky, V.V.; Kaminsky, V.M.; Beketov, G.V.; Rengevich, E.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    The researches results of films (PbTe)₁₋y(GaTe)y and (Pb₁₋xGexTe)₁₋y(GaTe)y of n-type conductivity with carrier concentration within (2⋅10¹⁷÷9⋅10¹⁸) cm⁻³ are represented. The films were growth by modified hot wall technology ...
  • Paraelectric properties of PbTe doped with Ga 
    Tetyorkin, V.; Movchan, S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    The static dielectric constant was investigated as a function of temperature and carrier concentration in In(Cu)/p-PbTe Schottky contacts. Single crystals of PbTe doped with Ga were used as substrates for preparation of ...

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