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Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics, 2010, том 13 за назвою

Репозиторій DSpace/Manakin

Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics, 2010, том 13 за назвою

Сортувати за: Порядок: Результатів:

  • Acoustic emission and fluctuations of electroluminescence intensity in light-emitting heterostructures 
    Veleschuk, V.P.; Lyashenko, O.V.; Vlasenko, Z.K.; Kysselyuk, M.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    It was shown that in the GaAsP/GaP and InGaN/GaN heterostructures during current passage redistribution of electroluminescence intensity on the structure surface takes place simultaneously with radiation of acoustic ...
  • Acoustic-emission method for controlling the defect-formation process in light-emitting structures 
    Lyashenko, O.V.; Vlasenko, A.I.; Veleschuk, V.P.; Kisseluk, M.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    Сomplex researches of light-emitting structures based on А₃В₅ compounds have been carried out. It has been shown that at current loading exceeding the acousticemission threshold, there arises a change in the electroluminescence ...
  • Author Index 2010 
    Автор відсутній (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
  • Calculated images of dislocations in crystals on section topograms 
    Novіkov, S.M.; Fodchuk, І.M.; Fedortsov, D.G.; Struk, A.Ya. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    By means of numerical solution of the Takagi equations, modeling of X-ray topographic images of deformation fields of the dislocation loops and dislocation of different types. Diffraction images created by dislocations ...
  • CdTe quantum dots precipitation of monodisperse fractions from colloid solutions 
    Savchuk, O.A.; Trishchuk, L.I.; Mazarchuk, I.A.; Tomashik, V.M.; Tomashik, Z.F.; Dimitriev, O.P.; Boruk, S.D.; Kapush, D.O. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    CdTe nanocrystals were prepared in aqueous solution by the reaction between Cd²⁺ and H₂Te, obtained electrochemically in a galvanostatic cell, in the presence of thioglycolic acid. Subsequently, we have investigated ...
  • Changes in nanostructure and micro-plastic properties of silicon crystals under action of magnetic fields 
    Steblenko, L.P.; Kurylyuk, A.N.; Koplak, O.V.; Krit, O.N.; Tkach, V.N.; Naumenko, S.N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    Experimental data obtained in this work are indicative of the fact that magnetic field stimulates processes of structural relaxation in silicon. Using the secondary-ion mass-spectrometry method, we found that the ...
  • Changes in the state of paramagnetic centers and lattice parameter of micro-structured Si under the influence of weak magnetic field 
    Trachevsky, V.V.; Steblenko, L.P.; Demchenko, P.Y.; Koplak, O.V.; Kuryliuk, A.M.; Melnik, A.K. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    In this work, the influence of weak magnetic field on structure-dependent properties of micro-structured Si was determined. The researches of EPR-spectra inherent to micro-structured Si showed the presence of the spectral ...
  • Compact laser probe for surface acoustic waves 
    Semenov, V.V.; Blonskyi, I.V.; Gryts, V.G. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    Our compact laser probe for surface acoustic waves (SAW) is designed to study properties of SAW substrates and control technological processes of their manufacturing. These substrates are widely used in device manufacturing, ...
  • Compact-sized excimer laser with two-side preionization 
    Baschenko, S.M.; Marchenko, L.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    Compact-sized monopulse excimer laser with the foot-print equal to only 250×80 mm, total height 250 mm and beam axis height 50 mm was designed. Output energy at the wavelength 308 nm (XeCl* mixture) is 5 mJ, maximal ...
  • Complex degree of coherency inherent to laser images of blood plasma polycrystalline networks 
    Ushenko, Yu.A.; Istratiy, V.V.; Dubolazov, A.V.; Angelsky, A.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    Given in this paper are theoretical basics for correlation-phase analysis of laser images inherent to human blood plasma. Also presented are comparative results of measurements aimed at coordinate distributions of the ...
  • Complex destruction of near-surface silicon layers of Si-SiO₂ structure 
    Yatsunskiy, I.R.; Kulinich, O.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    The structure of near-surface silicon layers of Si-SiO₂ has been investigated. It was observed the complex destruction of these layers caused by relaxation of mechanical stresses. The magnitude of mechanical stresses ...
  • Composite nanostructure of vertically aligned carbon nanotube array and planar graphite layer obtained by the injection CVD method 
    Labunov, V.A.; Shulitski, B.G.; Prudnikava, A.L.; Shaman, Y.P.; Basaev, A.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    The carbon nanostructure composed of an array of vertically aligned carbon nanotubes (CNTs) and a planar graphite layer (PGL) located at the top of the array has been obtained by the injection chemical vapor deposition ...
  • Controlling the photoluminescence spectra of porous nc-Si–SiOx structures by vapor treatment 
    Dan’ko, V.A.; Bratus, V.Ya.; Indutnyi, I.Z.; Lisovskyy, I.P.; Zlobin, S.O.; Michailovska, K.V.; Shepeliavyi, P.E. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    The effect of HF and H₂O₂ vapor treatment on the spectral composition and intensity of photoluminescence (PL) in porous oblique deposited nc-Si–SiOx structures have been studied using FTIR, electron-spin resonance (EPR) ...
  • Crystal lattice engineering the novel substrates for III-nitride-oxide heterostructures 
    Osinsky, V.; Dyachenko, O. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    In this work, we firstly investigated controlling the lattice parameter of IIIoxides used as substrates for III-nitrides heterostructures. It was shown that the atomic content change in III-sublattice gives large ...
  • Defect reorganization induced by pulsed magnetic field in porous InP 
    Milenin, V.V.; Red’ko, R.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    We present results of investigations of the effect caused by weak magnetic field (B = 60 mT) in porous InP crystals of impurity-defect composition. This effect was found when studying the spectra of radiative recombination ...
  • Determination of structural homogeneity of synthetic diamonds from analysis of Kikuchi lines intensity distribution 
    Fodchuk, I.; Balovsyak, S.; Borcha, M.; Garabazhiv, Ya.; Tkach, V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    It has been suggested the technique based on analysis of geometry and intensity distribution profiles in Kikuchi patterns obtained due to electron backscattering diffraction for defining structural imperfection of diamond ...
  • Determination of surface defects by using the wavefront scanner 
    Goloborodko, N.S.; Grygoruk, V.I.; Kurashov, V.N.; Podanchuk, D.V.; Goloborodko, A.A.; Kotov, M.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    The possibility of changes in the polarization state of the laser beam reflected from inhomogeneity with the refractive index gradient is theoretically shown, which allows separating the phase shifts related with relief ...
  • Double- and triple-crystal X-ray diffractometry of microdefects in silicon 
    Molodkin, V.B.; Olikhovskii, S.I.; Kyslovskyy, Ye.M.; Len, E.G.; Reshetnyk, O.V.; Vladimirova, T.P.; V.V. Lizunov, V.V.; Lizunova, S.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    The generalized dynamical theory of X-ray scattering by real single crystals allows to self-consistently describe intensities of coherent and diffuse scattering measured by double- and triple-crystal diffractometers (DCD ...
  • Effect of chemical modification of thin C₆₀ fullerene films on the fundamental absorption edge 
    Dmitruk, N.L.; Borkovskaya, O.Yu.; Havrylenko, T.S.; Naumenko, D.O.; Petrik, P.; Meza-Laguna, V.; Basiuk, E.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    Fullerene C₆₀ films were grown using physical vapor deposition on Si substrates at room temperature. Then chemical modification with cross-linking these films was performed using the reaction with 1,8-octanediamine (DA) ...
  • Effect of pressure on the characteristics of Schottky barrier diodes made of overcompensated semiconductor 
    Vlasov, S.I.; Saparov, F.A.; Ismailov, K.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    We studied the effect of uniform compression on characteristics of Au–n-Si Schottky barrier diodes made of overcompensated semiconductor. It is shown that overcompensation is caused by formation of structural defects ...

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