Acoustic-emission method for controlling the defect-formation process in light-emitting structures

Домашня сторінка
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Фізико-технічні та математичні науки
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Відділення фізики і астрономії
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Semiconductor Physics Quantum Electronics & Optoelectronics
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Semiconductor Physics Quantum Electronics & Optoelectronics, 2010, том 13
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Semicond. Physics Quantum Electronics & Optoelectronics, 2010, № 3
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Acoustic-emission method for controlling the defect-formation process in light-emitting structures

Lyashenko, O.V. ; Vlasenko, A.I. ; Veleschuk, V.P. ; Kisseluk, M.P.

Інший ID: PACS 43.35.+d, 43.50.+y, 72.70.+m, 73.50.TD, 78.60.Fi, 78.66.Fd

URI: http://dspace.nbuv.gov.ua/handle/123456789/118399

Посилання: Acoustic-emission method for controlling the defect-formation process in light-emitting structures / O.V. Lyashenko, A.I. Vlasenko, V.P. Veleschuk, M.P. Kisseluk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 3. — С. 326-329. — Бібліогр.: 4 назв. — англ.

Дата: 2010

Завантажень: 388

Acoustic-emission method for controlling the defect-formation process in light-emitting structures

Анотація:

Сomplex researches of light-emitting structures based on А₃В₅ compounds have been carried out. It has been shown that at current loading exceeding the acousticemission threshold, there arises a change in the electroluminescence intensity, fluctuation of current and light. It has been ascertained that natural ageing leads to a general improvement of some practically important parameters of light-emitting structures, in particular to increase of maximal admissible currents and reliability.

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