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Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics за назвою

Репозиторій DSpace/Manakin

Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics за назвою

Сортувати за: Порядок: Результатів:

  • Mechanical properties of biomorphous ceramics 
    Kiselov, V.S.; Borisov, Yu.S.; Tryus, M.; Vitusevich, S.A; Pud, S.; Belyaev, A.E. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2012)
    Mechanical properties: The Vickers hardness and bending strength of porous biomorphic SiC (bioSiC) ceramics fabricated from different natural hardwoods were investigated. It has been found that these parameters are highly ...
  • Mechanical scanning probe nanolithography: modeling and application 
    Lytvyn, P.M.; Lytvyn, O.S.; Dyachyns’ka, O.M.; Grytsenko, K.P.; Schrader, S.; Prokopenko, I.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2012)
    The paper presents a study on modeling the mechanical interaction between the tip of a scanning atomic force microscope (AFM) and surfaces of various types, which makes it possible to optimize parameters and modes for ...
  • Mechanism of 6H-3C transformation in SiC 
    Vlaskina, S.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)
    Heavily doped by nitrogen single crystals of 6H-SiC were completely transformed into 3C-SiC ones by annealing in vacuum at presence of Si vapor for 1 hour at 2180 K or 4 hours at 2080 K. Mechanism of solid-to-solid ...
  • Mechanism of current flow and temperature dependence of contact resistivity in Au-Pd-Ti-Pd-n⁺ -GaN ohmic contacts 
    Sachenko, A.V.; Belyaev, A.E.; Boltovets, N.S.; Kapitanchuk, L.M.; Klad’ko, V.P.; Konakova, R.V.; Kuchuk, A.V.; Korostinskay, T.V.; Pilipchuk, A.S.; Sheremet, V.N.; Mazur, Yu.I.; Ware, M.E.; Salamo, G.J. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2013)
    We present the results of structural and morphological investigations of interactions between phases in the layers of Au-Pd-Ti-Pd-n⁺-GaN contact metallization that appear at rapid thermal annealing (RTA). It is shown that ...
  • Mechanism of photoinduced luminescence degradation in CdSxSe₁₋x quantum dots 
    Kunets, V.P.; Kulish, N.R.; Lisitsa, M.P.; Bryksa, V.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    A possible mechanism of the photoinduced luminescence degradation in the hexagonal CdSxSe₁₋x quantum dots synthesized in a glass matrix is discussed using luminescence decay kinetic investigations and ab initio calculations ...
  • Mechanisms of carrier transport in CdTe polycrystalline films 
    Sukach, A.V.; Tetyorkin, V.V.; Krolevec, N.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    Cadmium telluride (CdTe) polycrystalline films grown on glass ceramic substrates by a modified close-spaced vapor transport technique have been investigated. The as-grown films have columnar structure with the average ...
  • Mechanisms of current passage and excitation of electroluminescence in GaSe:Er monocrystals 
    Tagiyev, B.G.; Madatov, R.S.; Aydayev, F.Sh.; Abbasova, T.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)
    The paper deals with electroluminescence investigations in GaSe:Er monocrystals. It is ascertained that Er³⁺ centers in GaSe are excited by two ways: a) as a result of non-radiating recombination of the injected charge ...
  • Mechanisms of forward current transport in p-GaSe-n-InSe heterojunctions 
    Kovalyuk, Z.D.; Makhniy, V.P.; Yanchuk, O.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    Voltage-current characteristics forwardly biased heterojunctions p-GaSe-n-InSe made by the method of optical contact are analyzed. Asit was ascertained, the forward current is determined by tunnel-recombination processes ...
  • Melt instabilities on semiconductor surfaces induced by laser radiation 
    Bonchik, A.Yu.; Dacko, B.J.; Demchuk, V.I.; Kiyak, S.G.; Palyvoda, I.P.; Shnyr, A.F. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    Laser modifications of semiconductors are often realized by pulsed rapid melting and subsequent resolidification. Recently melt instabilities have been discovered in locally melted semiconductor surfaces. We determined ...
  • Metal-dielectric black matrix for display devices 
    Chang Won Park; Joon-Bae Lee; Young Rag Do; Shepeliavyi, P.; Michailovska, K.; Indutnyy, I.; Kudryavtsev, O. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    Technology of metal-dielectric coating deposition for manufacturing a light-absorbing black matrix on a panel of color cathode-ray tubes is described. The coating is prepared using thermo-vacuum evaporation of SiO-Cr ...
  • Metastable interstitials in CdSe and CdS crystals 
    Borkovska, L.V.; Bulakh, B.M.; Khomenkova, L.Yu.; Korsunska, N.O.; Markevich, I.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    An "anomalous" defect drift in external electric field, namely, transport of acceptorlike centres from the anode to the cathode, has been observed in CdS:Cu, CdS:Ag and nominally undoped CdSe crystals at 350-700 K. The ...
  • Method and estimation of parameters of dense part of double electrical layer at the interface electrode-solution of the dye in liquid crystal 
    Kovalchuk, O.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    First estimated were the parameters of dense part of double electrical layer (DEL) at the interface electrode – solution of the dye in liquid crystal, based on analysis of capacitance-voltage characteristics obtained at ...
  • Method for determination of the absorption coefficient in films based on photoluminophore suspension for white LEDs 
    Khmil, D.N.; Kamuz, A.M.; Oleksenko, P.F.; Kamuz, V.G.; Aleksenko, N.G.; Kamuz, O.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2015)
    Developed in this work is the method for measuring the absorption coefficient in optically non-homogeneous media (films prepared from photoluminophore suspension). Using this new method, the authors have measured the ...
  • Method for determination of the absorption coefficient in films based on photoluminophore suspension for white LEDs 
    Khmil, D.N.; Kamuz, A.M.; Oleksenko, P.F.; Kamuz, V.G.; Aleksenko, N.G.; Kamuz, O.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2015)
    Developed in this work is the method for measuring the absorption coefficient in optically non-homogeneous media (films prepared from photoluminophore suspension). Using this new method, the authors have measured the ...
  • Method for replacing objects in 4F correlator: testing 
    Yezhov, P.V.; Kuzmenko, A.V.; Smirnova, Т.N.; Ivanovskyy, A. A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    The method of pattern recognition based on replacement of object images incoming to the correlator by object-dependent synthesized phase objects calculated using the iterative Fourier-transform algorithm was developed by ...
  • Method of low-temperature rise of laser diode quality 
    Kamuz, A.M.; Oleksenko, P.Ph.; Kamuz, O.A.; Kamuz, V.G. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)
    In 1987 the authors of this article discovered the effect of irreversible gigantic modification (IGM) of semiconductors. Basing on the IGM phenomenon the authors have developed technological method that enables to considerably ...
  • Methodological aspects of measuring the resistivity of contacts to high-resistance semiconductors 
    Slipokurov, V.S.; Dub, M.M.; Tkachenko, A.K.; Kudryk, Ya.Ya. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2015)
    Proposed has been the method of formation a thermally stable ohmic contact to the diamond without high-temperature annealing with the resistivity ~50 to 80 Ohm∙cm² when Rs = 3∙10⁷ Ohm/ eing based on the analysis of correlation ...
  • Methodological aspects of measuring the resistivity of contacts to high-resistance semiconductors 
    Slipokurov, V.S.; Dub, M.M.; Tkachenko, A.K.; Kudryk, Ya.Ya. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2015)
    Proposed has been the method of formation a thermally stable ohmic contact to the diamond without high-temperature annealing with the resistivity ~50 to 80 Ohm∙cm² when Rs = 3∙10⁷ Ohm/ eing based on the analysis of correlation ...
  • Methods of cluster analysis in sensor engineering: advantages and faults 
    Burlachenko, Yu.V.; Snopok, B.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    We consider the crisp and fuzzy partitioning techniques of cluster analysis bearing in mind their application for classification of data obtained with chemical sensor arrays. The advantage of the cluster analysis techniques ...
  • Metrological aspects of researching the specific contact resistivity of ohmic contacts by using the four-contact method 
    Sheremet, V.N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2014)
    In this paper, we have considered the four-contact method for measurements of the specific contact resistivity of the ohmic contacts (ρc). The presented method for measuring ρc has been compared with several other methods. ...

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