Methodological aspects of measuring the resistivity of contacts to high-resistance semiconductors

Домашня сторінка
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Фізико-технічні та математичні науки
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Відділення фізики і астрономії
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Semiconductor Physics Quantum Electronics & Optoelectronics
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Semiconductor Physics Quantum Electronics & Optoelectronics, 2015, том 18
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Semicond. Physics Quantum Electronics & Optoelectronics, 2015, № 1
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Methodological aspects of measuring the resistivity of contacts to high-resistance semiconductors

Slipokurov, V.S. ; Dub, M.M. ; Tkachenko, A.K. ; Kudryk, Ya.Ya.

Інший ID: DOI: 10.15407/spqeo18.02.144
PACS 73.40.Cg

URI: http://dspace.nbuv.gov.ua/handle/123456789/120731

Посилання: Methodological aspects of measuring the resistivity of contacts to high-resistance semiconductors / V.S. Slipokurov, M.M. Dub, A.K. Tkachenko, Ya.Ya. Kudryk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 1. — С. 144-146. — Бібліогр.: 7 назв. — англ.

Дата: 2015

Завантажень: 314

Methodological aspects of measuring the resistivity of contacts to high-resistance semiconductors

Анотація:

Proposed has been the method of formation a thermally stable ohmic contact to the diamond without high-temperature annealing with the resistivity ~50 to 80 Ohm∙cm² when Rs = 3∙10⁷ Ohm/ eing based on the analysis of correlation dependence between the resistivity of contact and that of semiconductor for the unannealed sample and the sample after rapid thermal annealing it has been shown that variation of the contact resistance on the plate is related with that of semiconductor and may be caused by inhomogeneity of the dopant distribution

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