Mechanisms of current passage and excitation of electroluminescence in GaSe:Er monocrystals

Домашня сторінка
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Фізико-технічні та математичні науки
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Відділення фізики і астрономії
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Semiconductor Physics Quantum Electronics & Optoelectronics
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Semiconductor Physics Quantum Electronics & Optoelectronics, 2002, том 5
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Semicond. Physics Quantum Electronics & Optoelectronics, 2002, № 3
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Mechanisms of current passage and excitation of electroluminescence in GaSe:Er monocrystals

Tagiyev, B.G. ; Madatov, R.S. ; Aydayev, F.Sh. ; Abbasova, T.M.

Інший ID: PACS: 72.80.-r, 78.60.Fi

URI: http://dspace.nbuv.gov.ua/handle/123456789/121236

Посилання: Mechanisms of current passage and excitation of electroluminescence in GaSe:Er monocrystals / B.G. Tagiyev, R.S. Madatov, F.Sh. Aydayev, T.M. Abbasova // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 3. — С. 261-263. — Бібліогр.: 5 назв. — англ.

Дата: 2002

Завантажень: 369

Mechanisms of current passage and excitation of electroluminescence in GaSe:Er monocrystals

Анотація:

The paper deals with electroluminescence investigations in GaSe:Er monocrystals. It is ascertained that Er³⁺ centers in GaSe are excited by two ways: a) as a result of non-radiating recombination of the injected charge carrier in donor-acceptor states and, b) transfer of evolved energy by means of Coulomb interaction. The concentration of majority carriers in the current step field (6.26•10¹¹ cm⁻³) and activation energy of impurities (0.14 eV) have been determined using data obtained.

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