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Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics за назвою

Репозиторій DSpace/Manakin

Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics за назвою

Сортувати за: Порядок: Результатів:

  • Obtaining and optical properties of the glasses of the GeS₂–HgS system 
    Nechyporuk, B.D.; Olekseyuk, I.D.; Yukhymchuk, V.O.; Filonenko, V.V.; Mazurets, I.I.; Parasyuk, O.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    The glassy alloys of the GeS₂–HgS system in the range of 0–50 mol. % HgS were obtained by the melt quenching technique. Their Raman spectra were investigated. The dependence of the particularities of the light scattering ...
  • Obtaining heterostructures with quantium dots for sensors by using liquid phase epitaxy 
    Maronchuk, I.E.; D’yachenko, A.M.; Minailov, A.I.; Kurak, V.V.; Chorny, I.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    Peculiarities of the crystallization processes forming the structures with quantum dots (QD) by the method of pulse cooling of saturated solution-melt were considered. A theoretical model of QD formation was developed, and ...
  • Ohmic contacts based on Pd to indium phosphide Gunn diodes 
    Belyaev, A.E.; Boltovets, N.S.; Bobyl, A.V.; Zorenko, A.V.; Arsentiev, I.N.; Kladko, V.P.; Kovtonyuk, V.M.; Konakova, R.V.; Kudryk, Ya.Ya.; Sachenko, A.V.; Slipokurov, V.S.; Slepova, A.S.; Safryuk, N.V.; Gudymenko, A.I.; Shynkarenko, V.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2015)
    Experimental data on manufacturing the ohmic contacts Au–Ti–Pd–n⁺-InP, formed using vacuum deposition of metal onto a heated to 300 °C substrate representing an epitaxial n⁺-n-n⁺⁺-n⁺⁺⁺-InP structure. The specific contact ...
  • Ohmic contacts to Hall sensors based on n-InSb-GaAs(i) heterostructures 
    Boltovets, N.S.; Konakova, R.V.; Kudryk, Ya.Ya.; Milenin, V.V.; Mitin, V.F.; Mitin, E.V.; Lytvyn, O.S.; Kapitanchuk, L.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2006)
    We consider ohmic contacts to the n-InSb epitaxial layers grown on a semi-insulating GaAs substrate. The ohmic contacts are formed through titanium metallization with subsequent gilding. Using the structural (AFM and XRD) ...
  • On a doped transition layer in the space charge region of Schottky contact 
    Shekhovtsov, L.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)
    A technique is proposed for estimation of maximal thickness of a doped semiconductor transition layer in a Schottky contact. It is based on taking spectral curves of transverse photovoltage. It is shown that in gallium ...
  • On a feature of temperature dependence of contact resistivity for ohmic contacts to n-Si with an n⁺ -n doping step 
    Sachenko, A.V.; Belyaev, A.E.; Boltovets, N.S.; Vinogradov, A.O.; Pilipenko, V.A.; Petlitskaya, T.V.; Anischik, V.M.; Konakova, R.V.; Korostinskaya, T.V.; Kostylyov, V.P.; Kudryk, Ya.Ya.; Lyapin, V.G.; Romanets, P.N.; Sheremet, V.N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2014)
    We present both theoretical and experimental temperature dependences of contact resistivity ρс(Т) for ohmic contacts to the silicon n⁺ -n-structures whose n⁺ -layer was formed using phosphorus diffusion or ion implantation. ...
  • On application of heat-conductive plastics in LED technology 
    Trofimov, Yu.V.; Lishik, S.I.; Pershukevich, P.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2013)
    A comparative analysis of the characteristics of heat-conducting plastic was performed. The results of the thermal measurements of two of the same type 3W LED modules installed on heat sink with the same area of ...
  • One-dimensional warm electron transport in GaN quantum well wires at low temperatures 
    Sarkar, S.K. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    One-dimensional warm electron coefficient (β) and Ohmic mobility μ₀ in a square quantum well wire of GaN are studied for lattice temperatures in the range of 4-10 K, which are important from the application point of view. ...
  • On features of crystal structure of semiconductor-ferroelectric Ag₃AsS₃ 
    Borovoy, N.; Gololobov, Yu.; Isaienko, G.; Salnik, A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2013)
    The temperature dependences of the unit cell parameters a(T) and c(T) of Ag₃AsS₃ were measured by the X-ray dilatometry method with high precision within the temperature range 100 to 300 K in the dark mode and under ...
  • On methodology of measuring parameters with the increased sensitivity to residual or irradiation induced inhomogeneities in semiconductors 
    Gaidar, G.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2009)
    Within the frame of theory of anisotropic scattering, it was studied the relation of values for specific resistance changes under the axial elastic deformations for manyvalley semiconductors, n-Ge and n-Si. The aspect ...
  • On origin of rapid portion of luminance-voltage dependence of ZnS:Mn TFEL devices and its aging behavior 
    Vlasenko, N.A.; Denisova, Z.L.; Kononets, Ya.F.; Veligura, L.I.; Chumachkova, M.M.; Tsyrkunov, Yu.A.; Soininen, E.L.; Tornqvist, R.O.; Vasame, K.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)
    Some peculiarities in the rapid portion of the voltage dependences of luminance and transferred charge as well as in its aging behavior in ZnS:Mn thin film electroluminescent devices made by different deposition techniques ...
  • On problem of the rigorous diffraction quantitative description 
    Anokhov, S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    New data showing an inaccuracy of Kirchhoff's description for the diffraction of the limited aperture light beams are presented. A series of the known experimental facts, which did not have an unequivocal interpretation ...
  • On Raman spectra of water, its structure and dependence on temperature 
    Baschenko, S.M.; Marchenko, I.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    Raman spectra of water within the temperature range 20 to 3 C were investigated. Best of all, the complex shape of the obtained spectra was approximated by four (or five) Gaussian-shaped peaks with their positions 3070, ...
  • On the 60-year jubilee of Machulin Volodymyr Fedorovych Academician of NAS of Ukraine 
    Автор відсутній (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    23 April 2010 is the jubilee date in life of Academician of NAS of Ukraine Machulin Volodymyr Fedorovych: he has reached 60-year age.
  • On the collection of photocurrent in solar cells with a contact grid 
    Sachenko, A.V.; Gorban, A.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    The exact solution for the dependence of specific power of photoconversion in the mode of maximum collected power on distance l between lines of the contact grid has been obtained. It is shown that in an optimized case, ...
  • On the current flow mechanism in the Au-TiBx-n-GaN-i-Al₂O₃ Schottky barrier diodes 
    Belyaev, A.E.; Boltovets, N.S.; Ivanov, V.N.; Klad’ko, V.P.; Konakova, R.V.; Kudryk, Ya.Ya.; Kuchuk, A.V.; Milenin, V.V.; Sveshnikov, Yu.N.; Sheremet, V.N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    We investigated a current flow mechanism in the Au−TiBx−n-GaN−i-Al₂O₃ Schottky barrier diodes, in which the space-charge region width is much over the de Broglie wavelength in GaN. An analysis of the temperature dependences ...
  • On the dielectric approximation in the additional light waves theory: an historical rehabilitation (recovery) 
    Piskovoi, V.N.; Venger, E.F. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2015)
    After the basic Pekar papers on crystal optics with spatial dispersion (CSD) among a lot of others there was the “dielectric approximation” (DA) method. But soon it has been fully rejected because, as it was recognized by ...
  • On the nature of the fine structure in emission spectra of XeCl laser 
    Blonskyy, I.V.; Gnatovskyy, A.V.; Zubrilin, N.G.; Pavlov, I.A.; Chernomorets, M.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    Results of investigation of the fine structure existing in emission spectra of the transverse-discharge pumped XeCl laser are presented. Influence of selective components of the cavity on the structure of spectrum of induced ...
  • On the origin of 300 K near-band-edge luminescence in CdTe 
    Glinchuk, K.D.; Litovchenko, N.M.; Strilchuk, O.N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    A careful analysis of 300 K near-band-edge luminescence from bulk CdTe and cadmium telluride films is made. It is shown that: (i) the observed difference in 300 K peak positions of the near-band-edge luminescence hvm in ...
  • On the origin of radiation-induced metastability in vitreous chalcogenide semiconductors: The role of intrinsic and impurity-related destruction-polymerization transformations 
    Shpotyuk, M.V.; Vakiv, M.M; Shpotyuk, O.I; Ubizskii, S.B. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2015)
    Radiation-optical effects in vitreous chalcogenide semiconductors are comprehensively analyzed as resulting from both intrinsic and impurity-related redistribution of covalent chemical bonds known also together as ...

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