On the current flow mechanism in the Au-TiBx-n-GaN-i-Al₂O₃ Schottky barrier diodes

Домашня сторінка
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Фізико-технічні та математичні науки
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Відділення фізики і астрономії
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Semiconductor Physics Quantum Electronics & Optoelectronics
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Semiconductor Physics Quantum Electronics & Optoelectronics, 2007, том 10
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Semicond. Physics Quantum Electronics & Optoelectronics, 2007, № 3
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On the current flow mechanism in the Au-TiBx-n-GaN-i-Al₂O₃ Schottky barrier diodes

Belyaev, A.E. ; Boltovets, N.S. ; Ivanov, V.N. ; Klad’ko, V.P. ; Konakova, R.V. ; Kudryk, Ya.Ya. ; Kuchuk, A.V. ; Milenin, V.V. ; Sveshnikov, Yu.N. ; Sheremet, V.N.

Інший ID: PACS 61.72.Lk, 61.72.Vv, 73.40.Gk, 85.30.Kk

URI: http://dspace.nbuv.gov.ua/handle/123456789/117993

Посилання: On the current flow mechanism in the Au-TiBx-n-GaN-i-Al₂O₃ Schottky barrier diodes / A.E. Belyaev, N.S. Boltovets, V.N. Ivanov, V.P. Klad'ko, R.V. Konakova, Ya.Ya. Kudruk, A.V. Kuchuk, V.V. Milenin, Yu.N. Sveshnikov, V.N. Sheremet // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 3. — С. 1-5. — Бібліогр.: 13 назв. — англ.

Дата: 2007

Завантажень: 401

On the current flow mechanism in the Au-TiBx-n-GaN-i-Al₂O₃ Schottky barrier diodes

Анотація:

We investigated a current flow mechanism in the Au−TiBx−n-GaN−i-Al₂O₃ Schottky barrier diodes, in which the space-charge region width is much over the de Broglie wavelength in GaN. An analysis of the temperature dependences of the I−V curves of forward-biased Schottky barriers showed that, in the temperature range 80−380 K, the current flow occurs as a tunneling one along dislocations crossing the space-charge region. The dislocation density ρ estimated from the I−V curves (in accordance with the model of tunneling along the dislocation line) was ≈ 1.7×10⁷ cm⁻². This value is close to that obtained with x-ray diffraction technique

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