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Obtaining heterostructures with quantium dots for sensors by using liquid phase epitaxy
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- Фізико-технічні та математичні науки
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- Відділення фізики і астрономії
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- Semiconductor Physics Quantum Electronics & Optoelectronics
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- Semiconductor Physics Quantum Electronics & Optoelectronics, 2004, том 7
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- Semicond. Physics Quantum Electronics & Optoelectronics, 2004, № 4
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Obtaining heterostructures with quantium dots for sensors by using liquid phase epitaxy
Інший ID:
PACS: 73.40.Lq
Посилання:
Obtaining heterostructures with quantium dots for sensors by using liquid phase epitaxy / I.E. Maronchuk, A.M. D’yachenko, A.I. Minailov, V.V. Kurak, I.V. Chorny // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 4. — С. 363-367. — Бібліогр.: 7 назв. — англ.
Підтримка:
The researches described in this publication were possible partly by Grant Award # UE2-2225 of the U.S. Civilian Research and Development Foundation for the Independent States of the Former Soviet Union (CRDF). The authors also thank Yu. Jegerya for valuable contribution to obtaining the STM-images of QDs.
Дата:
2004
Переглядів:
714
Завантажень:
424
Анотація:
Peculiarities of the crystallization processes forming the structures with quantum dots (QD) by the method of pulse cooling of saturated solution-melt were considered. A theoretical model of QD formation was developed, and it was shown that sizes of experimentally obtained QDs are in good accordance with those theoretically calculated taking into account the Rehbinder effect and the process of nuclei increase. The STM-image and the photoluminescence spectra of the structures with InAs QD grown on GaAs substrate and also InSb quantum dots grown on GaSb substrate are represented.
