Наукова електронна бібліотека
періодичних видань НАН України

Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics за назвою

Репозиторій DSpace/Manakin

Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics за назвою

Сортувати за: Порядок: Результатів:

  • Modelling optical spectra and obtaining information on parameters and features of semiconductor structures 
    Vasiljev, V.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)
    Problems of semiconductor optical spectrum identification are considered in the paper. Some models for description of optical reflection spectra in semiconductors and semiconductor structures are presented. Shown is the ...
  • Modelling the temperature conditions in three-dimensional piecewise homogeneous elements for microelectronic devices 
    Gavrysh, V.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    The steady-state linear thermal conductivity problem for an isotropic layer with a thin foreign parallelepipedic inclusion that releases heat has been considered with account of heat dissipation. The methodology for ...
  • Modelling vacancy microvoid formation in dislocation-free silicon single crystals 
    Talanin, V.I.; Talanin, I.E.; Koryagin, S.A.; Semikina, M.Yu. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2006)
    An alternative mathematical model of vacancy microvoid formation in dislocation-free silicon single crystals was represented. The analysis of conditions of microvoid nucleation inside the bulk of crystals during cooling ...
  • Model of dynamic indication in the bar graph form 
    Bushma, A.V.; Sypko, N.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)
    The main principles of formation of dynamic bar graph representation using display with a matrix electric connection of elements have been considered in this work. Applying the theory of sets we formalized a synthesis of ...
  • Model of heterotransistor with quantum dots 
    Timofeyev, V.I.; Faleyeva, E.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    Heterostructure transistors with quantum dots (QD) are now very perspective devices because of their higher velocities of electrons in the channel. Simulation results for concentration and carrier velocity distributions ...
  • Model of optical transitions in A₂B₆ wurtzite type quantum dots 
    Kunets, V.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    Model of optical transitions in A₂B₆ wurtzite type quantum dots is proposed. It is based on the effective mass approximation and the quantum confinement effects, the valence band degeneracy in G point of the Brillouin zone ...
  • Modification of electroluminescence and charge trapping in germanium implanted metal-oxide-silicon light-emitting diodes with plasma treatment 
    Nazarov, A.N.; Skorupa, W.; Vovk, Ja.N.; Osiyuk, I.N.; Tkachenko, A.S.; Tyagulskii, I.P.; Lysenko, V.S.; Gebel, T.; Rebohle, L.; Yankov, R.A.; Nazarova, T.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    We have studied the effect of plasma treatment on both the electroluminescent (EL) properties of Ge-implanted light-emitting metal-oxide silicon (MOS) devices and the charge trapping processes occurring therein. Under ...
  • Modification of optical properties and structure of thin films for enhancing absorption 
    Lysiuk, V.O. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2014)
    The most used methods such as ion implantation, laser irradiation and nanosphere lithography for modification and creation of special microrelief of thin absorbing films on photosensitive substrates have been described. ...
  • Modification of photoelectric and electrical properties of III-V semiconductors by pulsed laser irradiation 
    Gnatyuk, V.A.; Gorodnychenko, O.S.; Mozol, P.O.; Vlasenko, O.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    The effect of nanosecond ruby laser pulses on the photoelectric and electrical properties of GaAs and InSb single crystals with different pre-treated surfaces was studied. The photoconductivity, surface recombination rate ...
  • Modification of properties of the glass-Si₃N₄-Si-SiO₂ structure at laser treatment 
    Konakova, R.V.; Kladko, V.P.; Lytvyn, O.S.; Okhrimenko, O.B.; Konoplev, B.G.; Svetlichnyi, A.M.; Lissotschenko, V.N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2009)
    We studied the effect of laser treatment on the glass-Si₃N₄-Si-SiO₂ structures. It is shown that laser treatment causes appearance of an additional band in their transmission spectra as well as smearing of grain structure ...
  • Modified correlation equation in the FSDP-related void-based model for As₂S(Se)₃ chalcogenide glasses 
    Kavetskyy, T.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2013)
    Revised in this work is the correlation equation Q₁ = 2.3×π/D in the FSDPrelated void-based model for As₂S(Se)₃ chalcogenide glasses between the first sharp diffraction peak (FSDP) position, Q₁, and nanovoid diameter, ...
  • Modified optical OR and AND gates 
    Srinivasulu, Avireni (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)
    This paper deals with optical OR and AND gate, using unijunction transistor (UJT), light emitting diode (LED), and photo-resistor (LDR). Effort is made to extend the development of the gates using UJT, LDR, and LED to work ...
  • Momentum relaxation of hot electrons during radiative intraband indirect transitions in ZnS:Cr 
    Vlasenko, N.A.; Belyaev, A.E.; Denisova, Z.L.; Kononets, Ya.F.; Komarov, A.V.; Veligura, L.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    A structureless emission in the visible region was revealed in ZnS:Cr thin-film electroluminescent structures (TFELS) apart the main near-infrared emission resulted from the 5E → 5T2 transition in the 3d shell of the Cr²⁺ ...
  • Monte Carlo Simulation of hot electron effects in compensated GaN semiconductor at moderate electricfields 
    Syngaivska, G.I.; Korotyeyev, V.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    The electron distribution function and transport characteristics of hot electrons in GaN semiconductor are calculated by the Monte Carlo method. We studied the electron transport at temperatures of 10, 77, and 300 K under ...
  • Morphologic and optical characterization of ZnO:Co thin films grown by PLD 
    Vuichyk, M.V.; Tsybrii, Z.F.; Lavoryk, S.R.; Svezhentsova, K.V.; Virt, I.S.; Chizhov, A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2014)
    The morphological properties of the surface and optical characteristics of nanocomposite ZnO:Co structures grown on substrates of monocrystalline silicon and sapphire by pulsed laser deposition (PLD) method have been ...
  • Morphology and dielectric properties of polymer dispersed liquid crystal with magnetic nanoparticles 
    Kopčanský, P.; Timko, M.; Mitrova, Z.; Zavisova, V.; Koneracká, M.; Tomašovičov, N.; Tomčo, L.; Gornitska, O.P.; Kovalchuk, O.V.; Bykov, V.M.; Kovalchuk, T.M.; Studenyak, I.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    It has been shown that introduction of magnetic nanoparticles (MN) of various shapes with the concentration 10⁻¹ wt.% into polymer dispersed liquid crystal (PDLC) causes two effects: the size of liquid crystal droplets ...
  • Morphology and optical constants of nanographite films created by thermal vacuum deposition 
    Kozachenko, V.V.; Kondratenko, O.S.; Normand, F.Le (Semiconductor Physics Quantum Electronics & Optoelectronics, 2015)
    The method for nanographite films preparation using thermal sublimation in vacuum of graphite nanoparticles under ultrasound treatment was proposed. Studied in the system nanographite film – substrate were composition and ...
  • Morphology and optical properties of SnO₂ nanofilms 
    Smyntyna, V.A.; Filevskaya, L.N.; Grinevich, V.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2008)
    Results of surface morphology and optical density investigations and the photoluminescence phenomenon were obtained for SnO₂ thin films. Films having nanosize of their grains ~ 10-15 nm were obtained using polymeric ...
  • Morphology and optical properties of α-Si:Y films, obtained by electron-beam evaporation method 
    Semikina, T.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    This paper presents the results of AFM, Raman, IR spectroscopy and ellipsometry of α-Si:Y films prepared by electron-beam evaporation. The influence of the type and temperature of substrates, as well as the evaporation ...
  • Morphology of sulphur-terminated compound deposits condensed on different substrates in vacuum 
    Grytsenko, K.P.; Lytvyn, P.M.; Doroshenko, T.P.; Kolomzarov, Yu.V.; Bricks, J.L.; Kurdyukov, V.V.; Slominskii, Yu.L.; Tolmachev, O.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2015)
    Thin films of new sulphur-terminated organic compounds were deposited by evaporation in vacuum onto the glass, silicone, gold and polytetrafluoroethylene substrates. The influence of compound chemical structure and substrate ...

Пошук


Розширений пошук

Перегляд

Мій обліковий запис